SP2103

SP2103
Green
Product
S a mHop Microelectronics C orp.
Ver 1.3
Dual N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Super high dense cell design for low R DS(ON).
PRODUCT SUMMARY
V DSS
ID
R DS(ON) (m Ω) Max
Rugged and reliable.
220 @ VGS=10V
100V
Suface Mount Package.
2.2A
350 @ VGS=4.5V
D1
D1
D2
D2
S1
G1
S2
G2
PIN1
PDFN 5x6
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted )
Symbol
VDS
VGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
ID
Drain Current-Continuous
IDM
EAS
-Pulsed
TA=25°C
TA=70°C
a
b
Single Pulse Avalanche Energy
a
PD
Maximum Power Dissipation
TJ, TSTG
Operating Junction and Storage
Temperature Range
d
Limit
100
±20
2.2
Units
V
V
A
1.8
A
9
A
16
mJ
TA=25°C
2.5
W
TA=70°C
1.6
W
-55 to 150
°C
5
50
°C/W
°C/W
THERMAL CHARACTERISTICS
R JC
R JA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Details are subject to change without notice.
Jul,18,2013
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SP2103
Ver 1.3
ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted )
Symbol
Parameter
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
VGS=0V , ID=250uA
100
IDSS
Zero Gate Voltage Drain Current
VDS=80V , VGS=0V
IGSS
Gate-Body Leakage Current
VGS= ±20V , VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(th)
VDS=VGS , ID=250uA
RDS(ON)
Drain-Source On-State Resistance
gFS
Forward Transconductance
1
Typ
Max
Units
V
1
uA
±100
nA
1.5
1.9
V
VGS=10V , ID=1.1A
185
220
m ohm
VGS=4.5V , ID=0.9A
220
350
m ohm
VDS=10V , ID=1.1A
3
VDS=25V,VGS=0V
f=1.0MHz
453
34
23
634
48
41
pF
pF
pF
9.5
10
19
ns
18.3
20
37
ns
ns
6.5
13
ns
VDS=50V,ID=1.1A,VGS=10V
7.5
10.5
nC
VDS=50V,ID=1.1A,VGS=4.5V
4
5.6
nC
S
c
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
tD(ON)
Turn-On Delay Time
tr
Rise Time
tD(OFF)
Turn-Off Delay Time
tf
Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
c
VDD=50V
ID=1A
VGS=10V
RGEN= 6 ohm
VDS=50V,ID=1.1A,
VGS=10V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD
Diode Forward Voltage
VGS=0V,IS=2A
1
1.4
nC
1.9
2.7
nC
0.83
1.2
V
Notes
_ 10sec.
a.Surface Mounted on FR4 Board,t <
_ 2%.
_ 300us, Duty Cycle <
b.Pulse Test:Pulse Width <
c.Guaranteed by design, not subject to production testing.
d.Starting TJ=25°C,L=0.5mH,VDD = 50V.(See Figure13)
Jul,18,2013
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SP2103
Ver 1.3
10
10
ID, Drain Current(A)
6
VGS=3.5V
4
VGS=3V
2
0
RDS(on)(m Ω)
VGS=4V
VGS=4.5V
0
1.0
0.5
2.0
1.5
2.5
8
6
Tj=125 C
4
25 C
-55 C
2
0
3.0
0
1.6
0.8
2.4
3.2
4.0
4.8
VDS, Drain-to-Source Voltage(V)
V GS, Gate-to-Source Voltage(V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
480
2.2
400
2.0
R DS(on), On-Resistance
Normalized
ID, Drain Current(A)
VGS=10V
8
320
V G S =4.5V
240
V G S =10V
160
80
V G S =10V
I D =1.1A
1.8
1.6
1.4
V G S =4.5V
I D =0.9A
1.2
1.0
1
0.1
0
2
4
6
8
10
0
25
50
75
100
125
150
T j ( °C )
Tj, Junction Temperature(° C )
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
Figure 4. On-Resistance Variation with Drain
Current and Temperature
1.6
BVDSS, Normalized
Drain-Source Breakdown Voltage
Vth, Normalized
Gate-Source Threshold Voltage
I D, Drain Current(A)
V DS =V G S
I D =250uA
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25
0
25
50
75 100 125 150
Tj, Junction Temperature( ° C )
1.15
I D =250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25
0
25
50
75 100 125 150
Tj, Junction Temperature(° C )
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Breakdown Voltage Variation
with Temperature
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SP2103
Ver 1.3
600
20
Is, Source-drain current(A)
I D =1.1A
500
RDS(on)(m Ω)
400
125 C
300
200
25 C
75 C
100
0
4
6
8
75 C
10
0
0.3
0.6
0.9
1.2
1.5
VGS, Gate-to-Source Voltage(V)
VSD, Body Diode Forward Voltage(V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
Figure 8. Body Diode Forward Voltage
Variation with Source Current
V GS, Gate to Source Voltage(V)
10
500
C, Capacitance(pF)
25 C
125 C
1
2
0
600
Ciss
400
300
200
Coss
100
Crss
0
10
0
5
10
15
20
25
VDS=50V
ID=1.1A
8
6
4
2
0
30
0
1.5
3
4.5
6
7.5
VDS, Drain-to-Source Voltage(V)
Qg, Total Gate Charge(nC)
Figure 9. Capacitance
Figure 10. Gate Charge
9
100
I D, Drain Current(A)
Switching Time(ns)
10
TD(off )
Tr
TD(on)
10
Tf
R
it
10
1m
10
10
0m
DC
0u
s
s
ms
s
0.1
VGS=10V
Single Pulse
TA=25 C
1
6
(
Lim
1
VDS=50V,ID=1A
VGS=10V
1
DS
)
ON
10
0.01
0.1
60 100
1
10
100
Rg, Gate Resistance(Ω)
V DS, Drain-Source Voltage(V)
Figure 11. switching characteristics
Figure 12. Maximum Safe Operating Area
Jul,18,2013
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SP2103
Ver 1.3
V(BR)DSS
tp
L
VDS
D.U.T
RG
+
- VDD
IAS
20V
tp
0.01
IAS
Unclamped Inductive Waveforms
Uncamped Inductive Test Circuit
Figure 13b.
Figure 13a.
1
Normalized Transient
Thermal Resistance
0.5
0.2
0.1
0.1
0.05
0.02
P DM
0.01
0.01
t1
Single Pulse
1.
2.
3.
4.
t2
R thJ A (t)=r (t) * R thJ A
R thJ A =S ee Datas heet
T J M-T A = P DM* R thJ A (t)
Duty C ycle, D=t1/t2
0.001
0.00001
0.0001
0.001
0.1
0.01
1
Square Wave Pulse Duration(sec)
100
10
1000
Figure 14. Normalized Thermal Transient Impedance Curve
Jul,18,2013
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SP2103
Ver 1.3
PACKAGE OUTLINE DIMENSIONS
PDFN 5x6-8L
E1
E
E2
D
D1
e
D2
b
L2
L
L1
BOTTOM VIEW
TOP VIEW
A
A1
c
SIDE VIEW
SYMBOLS
A
A1
b
c
D
D1
D2
E
E1
E2
e
L
L1
L2
0
MIN
0.85
0.00
0.30
0.15
0.50
0.45
0.00
MILLIMETERS
NOM
0.95
0.40
0.20
5.20 BSC
4.35 BSC
0.60
5.55 BSC
6.05 BSC
3.82 BSC
1.27 BSC
0.55
MAX
1.00
0.05
0.50
0.25
0.75
0.65
0.15
0.68 REF
0o
10o
Jul,18,2013
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SP2103
Ver 1.3
TOP MARKING DEFINITION
PDFN 5x6-8L
SamHop Logo
2103
Product No.
XXXXXX
Pin 1
SMC internal Code No.(A,B,C...Z)
Wafer Lot No.
Production Date (1,2 ~ 9, A,B.....)
Production Month (1,2 ~ 9, A,B,C)
Production Year (2009 = 9, 2010 = A.....)
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