SP2103 Green Product S a mHop Microelectronics C orp. Ver 1.3 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low R DS(ON). PRODUCT SUMMARY V DSS ID R DS(ON) (m Ω) Max Rugged and reliable. 220 @ VGS=10V 100V Suface Mount Package. 2.2A 350 @ VGS=4.5V D1 D1 D2 D2 S1 G1 S2 G2 PIN1 PDFN 5x6 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS Parameter Drain-Source Voltage Gate-Source Voltage ID Drain Current-Continuous IDM EAS -Pulsed TA=25°C TA=70°C a b Single Pulse Avalanche Energy a PD Maximum Power Dissipation TJ, TSTG Operating Junction and Storage Temperature Range d Limit 100 ±20 2.2 Units V V A 1.8 A 9 A 16 mJ TA=25°C 2.5 W TA=70°C 1.6 W -55 to 150 °C 5 50 °C/W °C/W THERMAL CHARACTERISTICS R JC R JA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Details are subject to change without notice. Jul,18,2013 1 www.samhop.com.tw SP2103 Ver 1.3 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage Conditions Min VGS=0V , ID=250uA 100 IDSS Zero Gate Voltage Drain Current VDS=80V , VGS=0V IGSS Gate-Body Leakage Current VGS= ±20V , VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(th) VDS=VGS , ID=250uA RDS(ON) Drain-Source On-State Resistance gFS Forward Transconductance 1 Typ Max Units V 1 uA ±100 nA 1.5 1.9 V VGS=10V , ID=1.1A 185 220 m ohm VGS=4.5V , ID=0.9A 220 350 m ohm VDS=10V , ID=1.1A 3 VDS=25V,VGS=0V f=1.0MHz 453 34 23 634 48 41 pF pF pF 9.5 10 19 ns 18.3 20 37 ns ns 6.5 13 ns VDS=50V,ID=1.1A,VGS=10V 7.5 10.5 nC VDS=50V,ID=1.1A,VGS=4.5V 4 5.6 nC S c DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge c VDD=50V ID=1A VGS=10V RGEN= 6 ohm VDS=50V,ID=1.1A, VGS=10V DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS VSD Diode Forward Voltage VGS=0V,IS=2A 1 1.4 nC 1.9 2.7 nC 0.83 1.2 V Notes _ 10sec. a.Surface Mounted on FR4 Board,t < _ 2%. _ 300us, Duty Cycle < b.Pulse Test:Pulse Width < c.Guaranteed by design, not subject to production testing. d.Starting TJ=25°C,L=0.5mH,VDD = 50V.(See Figure13) Jul,18,2013 2 www.samhop.com.tw SP2103 Ver 1.3 10 10 ID, Drain Current(A) 6 VGS=3.5V 4 VGS=3V 2 0 RDS(on)(m Ω) VGS=4V VGS=4.5V 0 1.0 0.5 2.0 1.5 2.5 8 6 Tj=125 C 4 25 C -55 C 2 0 3.0 0 1.6 0.8 2.4 3.2 4.0 4.8 VDS, Drain-to-Source Voltage(V) V GS, Gate-to-Source Voltage(V) Figure 1. Output Characteristics Figure 2. Transfer Characteristics 480 2.2 400 2.0 R DS(on), On-Resistance Normalized ID, Drain Current(A) VGS=10V 8 320 V G S =4.5V 240 V G S =10V 160 80 V G S =10V I D =1.1A 1.8 1.6 1.4 V G S =4.5V I D =0.9A 1.2 1.0 1 0.1 0 2 4 6 8 10 0 25 50 75 100 125 150 T j ( °C ) Tj, Junction Temperature(° C ) Figure 3. On-Resistance vs. Drain Current and Gate Voltage Figure 4. On-Resistance Variation with Drain Current and Temperature 1.6 BVDSS, Normalized Drain-Source Breakdown Voltage Vth, Normalized Gate-Source Threshold Voltage I D, Drain Current(A) V DS =V G S I D =250uA 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature( ° C ) 1.15 I D =250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature(° C ) Figure 5. Gate Threshold Variation with Temperature Figure 6. Breakdown Voltage Variation with Temperature Jul,18,2013 3 www.samhop.com.tw SP2103 Ver 1.3 600 20 Is, Source-drain current(A) I D =1.1A 500 RDS(on)(m Ω) 400 125 C 300 200 25 C 75 C 100 0 4 6 8 75 C 10 0 0.3 0.6 0.9 1.2 1.5 VGS, Gate-to-Source Voltage(V) VSD, Body Diode Forward Voltage(V) Figure 7. On-Resistance vs. Gate-Source Voltage Figure 8. Body Diode Forward Voltage Variation with Source Current V GS, Gate to Source Voltage(V) 10 500 C, Capacitance(pF) 25 C 125 C 1 2 0 600 Ciss 400 300 200 Coss 100 Crss 0 10 0 5 10 15 20 25 VDS=50V ID=1.1A 8 6 4 2 0 30 0 1.5 3 4.5 6 7.5 VDS, Drain-to-Source Voltage(V) Qg, Total Gate Charge(nC) Figure 9. Capacitance Figure 10. Gate Charge 9 100 I D, Drain Current(A) Switching Time(ns) 10 TD(off ) Tr TD(on) 10 Tf R it 10 1m 10 10 0m DC 0u s s ms s 0.1 VGS=10V Single Pulse TA=25 C 1 6 ( Lim 1 VDS=50V,ID=1A VGS=10V 1 DS ) ON 10 0.01 0.1 60 100 1 10 100 Rg, Gate Resistance(Ω) V DS, Drain-Source Voltage(V) Figure 11. switching characteristics Figure 12. Maximum Safe Operating Area Jul,18,2013 4 www.samhop.com.tw SP2103 Ver 1.3 V(BR)DSS tp L VDS D.U.T RG + - VDD IAS 20V tp 0.01 IAS Unclamped Inductive Waveforms Uncamped Inductive Test Circuit Figure 13b. Figure 13a. 1 Normalized Transient Thermal Resistance 0.5 0.2 0.1 0.1 0.05 0.02 P DM 0.01 0.01 t1 Single Pulse 1. 2. 3. 4. t2 R thJ A (t)=r (t) * R thJ A R thJ A =S ee Datas heet T J M-T A = P DM* R thJ A (t) Duty C ycle, D=t1/t2 0.001 0.00001 0.0001 0.001 0.1 0.01 1 Square Wave Pulse Duration(sec) 100 10 1000 Figure 14. Normalized Thermal Transient Impedance Curve Jul,18,2013 5 www.samhop.com.tw SP2103 Ver 1.3 PACKAGE OUTLINE DIMENSIONS PDFN 5x6-8L E1 E E2 D D1 e D2 b L2 L L1 BOTTOM VIEW TOP VIEW A A1 c SIDE VIEW SYMBOLS A A1 b c D D1 D2 E E1 E2 e L L1 L2 0 MIN 0.85 0.00 0.30 0.15 0.50 0.45 0.00 MILLIMETERS NOM 0.95 0.40 0.20 5.20 BSC 4.35 BSC 0.60 5.55 BSC 6.05 BSC 3.82 BSC 1.27 BSC 0.55 MAX 1.00 0.05 0.50 0.25 0.75 0.65 0.15 0.68 REF 0o 10o Jul,18,2013 6 www.samhop.com.tw SP2103 Ver 1.3 TOP MARKING DEFINITION PDFN 5x6-8L SamHop Logo 2103 Product No. XXXXXX Pin 1 SMC internal Code No.(A,B,C...Z) Wafer Lot No. Production Date (1,2 ~ 9, A,B.....) Production Month (1,2 ~ 9, A,B,C) Production Year (2009 = 9, 2010 = A.....) Jul,18,2013 7 www.samhop.com.tw