STK103 Gre r Pro S a mHop Microelectronics C orp. Ver 1.1 N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS ID R DS(ON) (m Ω) Max FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. 210 @ VGS=10V 100V Suface Mount Package. 2.0A 312 @ VGS=4.5V D D G S D SOT-89 G S ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS Parameter Drain-Source Voltage Gate-Source Voltage ID Drain Current-Continuous IDM -Pulsed a Limit 100 ±20 Units V V TA=25°C 2.0 A TA=70°C 1.6 A b d EAS Single Pulse Avalanche Energy PD Maximum Power Dissipation TJ, TSTG Operating Junction and Storage Temperature Range TA=25°C TA=70°C THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient Details are subject to change without notice. 11 A 20 mJ 1.25 W 0.8 W -55 to 150 °C 100 °C/W Jul,13,2011 1 www.samhop.com.tw STK103 Ver 1.1 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage Conditions Min VGS=0V , ID=250uA 100 IDSS Zero Gate Voltage Drain Current VDS=80V , VGS=0V IGSS Gate-Body Leakage Current VGS= ±20V , VDS=0V ON CHARACTERISTICS VGS(th) Gate Threshold Voltage VDS=VGS , ID=250uA RDS(ON) Drain-Source On-State Resistance gFS Forward Transconductance 1 Typ Max Units V 1 uA ±100 nA 1.9 2.5 V VGS=10V , ID=1.00A 168 210 m ohm VGS=4.5V , ID=0.82A 231 312 m ohm VDS=10V , ID=1.00A 1.9 S VDS=25V,VGS=0V f=1.0MHz 310 38 24 pF pF pF 7.7 9.2 ns ns c DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge c VDD=50V ID=1.00A VGS=10V RGEN= 6 ohm 16 ns 4.1 5.6 ns nC VDS=50V,ID=1.00A,VGS=4.5V 3.3 nC VDS=50V,ID=1.00A, VGS=10V 0.9 nC 1.7 nC VDS=50V,ID=1.00A,VGS=10V DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Diode Forward Voltage VGS=0V,IS=1A VSD 0.79 1.3 V Notes _ 10sec. a.Surface Mounted on FR4 Board,t < _ 2%. _ 300us, Duty Cycle < b.Pulse Test:Pulse Width < c.Guaranteed by design, not subject to production testing. d.Starting TJ=25°C,L=0.5mH,VDD = 50V.(See Figure13) Jul,13,2011 2 www.samhop.com.tw STK103 Ver 1.1 10 5 ID, Drain Current(A) 4 ID, Drain Current(A) VGS = 5V VGS = 10V VGS = 4.5V 3 VGS = 4V 2 VGS = 3.5V 1 8 6 4 Tj=125 C 2 25 C -55 C VGS = 3V 0 0 0 1.0 0.5 2.0 1.5 2.5 3.0 0 600 2.0 500 1.8 400 VGS = 4.5V 200 VGS = 10V 100 5 6 VGS=10V ID=1.00A 1.6 1.4 VGS=4.5V ID=0.82A 1.2 1.0 0 0.1 1 2 3 4 0.8 5 0 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -25 0 25 50 75 100 125 150 Figure 4. On-Resistance Variation with Drain Current and Temperature BVDSS, Normalized Drain-Source Breakdown Voltage VDS = VGS ID = 250uA 75 Tj, Junction Temperature ( C) Figure 3. On-Resistance vs. Drain Current and Gate Voltage 1.3 50 25 Tj( C) ID, Drain Current (A) Vth, Normalized Gate-Source Threshold Voltage 4 Figure 2. Transfer Characteristics RDS(ON), On-Resistance Normalized R DS(on)(m Ω) Figure 1. Output Characteristics 0.5 -50 3 VGS, Gate-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) 300 2 1 100 125 150 Tj, Junction Temperature ( C) 1.3 ID = 250uA 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature ( C) Figure 6. Breakdown Voltage Variation with Temperature Figure 5. Gate Threshold Variation with Temperature Jul,13,2011 3 www.samhop.com.tw STK103 Ver 1.1 600 20.0 ID = 1.00A Is, Source-drain current (A) RDS(on)(m Ω) 500 400 125 C 300 75 C 25 C 200 100 0 5.0 25 C 125 C 75 C 4 2 0 8 6 1.0 10 0 0.4 0.8 1.2 1.6 2.0 VGS, Gate-Sorce Voltage(V) VSD, Body Diode Forward Voltage(V) Figure 7. On-Resistance vs. Gate-Source Voltage Figure 8. Body Diode Forward Voltage Variation with Source Current 10 VGS, Gate to Source Voltage (V) 600 500 C, Capacitance (pF) 10.0 400 Ciss 300 200 100 Coss VDS = 50V ID = 1.00A 8 6 4 2 Crss 0 0 0 5 10 15 20 25 30 0 1 2 3 4 5 6 7 VDS, Drain-to Source Voltage(V) Qg, Total Gate Charge(nC) Figure 9. Capacitance Figure 10. Gate Charge 8 300 10 ID, Drain Current (A) Switching Time(ns) 100 TD(off ) 10 Tr TD(on) Tf V DS =50V,I D =1.0A V GS =10V 1 1 10 R Rg, Gate Resistance(Ω) (O N) Lim it 1m 10 1 DC 0.1 0.01 0.1 100 DS 10 1s 10 0m s ms s s VGS = 10V Single Pulse TA = 25 C 1 10 100 VDS, Drain-Source Voltage (V) Figure 11. switching characteristics Figure 12. Maximum Safe Operating Area Jul,13,2011 4 www.samhop.com.tw STK103 Ver 1.1 V (B R ) DS S tp L V DS D .U .T RG + - IA S VDD 20V 0.0 1 tp I AS Unclamped Inductive Test Circuit Unclamped Inductive Waveforms Figure 13a. 10 Figure 13b. 0 r(t),Normalized Effective Transient Thermal Impedance D=0.5 0.2 10 0.1 -1 0.05 0.02 PDM 0.01 10 t1 -2 t2 1. RɞJA (t)=r (t) * RɞJA 2. RɞJA=See Datasheet 3. TJM-TA = P* RɞJA (t) 4. Duty Cycle, D=t1/t2 Single Pulse 10 -3 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 Square Wave Pulse Duration (msec) Figure 14. Normalized Thermal Transient Impedance Curve Jul,13,2011 5 www.samhop.com.tw STK103 Ver 1.1 PACKAGE OUTLINE DIMENSIONS SOT-89 A B C1 F1 F2 A1 C H B1 F E D G R E F. DIME NS IONS Milimeters MIN. A A1 B B1 C C1 D E F F1 F2 G H MAX. 4.60 4.25 1.70 1.50 2.60 1.20 4.40 4.05 1.50 1.30 2.40 0.89 3.00 R E F . 1.50 R E F . 0.52 1.60 0.41 0.40 1.40 0.35 5± T Y P . 0.70 R E F . Jul,13,2011 6 www.samhop.com.tw STK103 Ver 1.1 SOT-89 Tape B SOT-89 Carrier Tape C E A K G F H A D B J B2 B3 B1 8± Max. A1 12± Max. SECTION A-A SECTION B-B unit:р PACKAGE SOP 8N 150п A1 4.85 ²0.10 B1 4.45 ²0.10 B2 1.85 ²0.10 C 4.0 ²0.10 D 8.0 ²0.10 E B3 2.0 ²0.05 0.254 ²0.02 F 1.75 !²0.10 G 5.5 ²0.05 H 1.50 ²0.10 J 1.5 ²0.25 K 10C 12.0 +0.30 .0.10 40.0 ²0.20 Jun,13,2011 7 www.samhop.com.tw