STK103

STK103
Gre
r
Pro
S a mHop Microelectronics C orp.
Ver 1.1
N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS
ID
R DS(ON) (m Ω) Max
FEATURES
Super high dense cell design for low R DS(ON).
Rugged and reliable.
210 @ VGS=10V
100V
Suface Mount Package.
2.0A
312 @ VGS=4.5V
D
D
G
S
D
SOT-89
G
S
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted )
Symbol
VDS
VGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
ID
Drain Current-Continuous
IDM
-Pulsed
a
Limit
100
±20
Units
V
V
TA=25°C
2.0
A
TA=70°C
1.6
A
b
d
EAS
Single Pulse Avalanche Energy
PD
Maximum Power Dissipation
TJ, TSTG
Operating Junction and Storage
Temperature Range
TA=25°C
TA=70°C
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient
Details are subject to change without notice.
11
A
20
mJ
1.25
W
0.8
W
-55 to 150
°C
100
°C/W
Jul,13,2011
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STK103
Ver 1.1
ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted )
Symbol
Parameter
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
VGS=0V , ID=250uA
100
IDSS
Zero Gate Voltage Drain Current
VDS=80V , VGS=0V
IGSS
Gate-Body Leakage Current
VGS= ±20V , VDS=0V
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
VDS=VGS , ID=250uA
RDS(ON)
Drain-Source On-State Resistance
gFS
Forward Transconductance
1
Typ
Max
Units
V
1
uA
±100
nA
1.9
2.5
V
VGS=10V , ID=1.00A
168
210
m ohm
VGS=4.5V , ID=0.82A
231
312
m ohm
VDS=10V , ID=1.00A
1.9
S
VDS=25V,VGS=0V
f=1.0MHz
310
38
24
pF
pF
pF
7.7
9.2
ns
ns
c
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
tD(ON)
Turn-On Delay Time
tr
Rise Time
tD(OFF)
Turn-Off Delay Time
tf
Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
c
VDD=50V
ID=1.00A
VGS=10V
RGEN= 6 ohm
16
ns
4.1
5.6
ns
nC
VDS=50V,ID=1.00A,VGS=4.5V
3.3
nC
VDS=50V,ID=1.00A,
VGS=10V
0.9
nC
1.7
nC
VDS=50V,ID=1.00A,VGS=10V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Diode Forward Voltage
VGS=0V,IS=1A
VSD
0.79
1.3
V
Notes
_ 10sec.
a.Surface Mounted on FR4 Board,t <
_ 2%.
_ 300us, Duty Cycle <
b.Pulse Test:Pulse Width <
c.Guaranteed by design, not subject to production testing.
d.Starting TJ=25°C,L=0.5mH,VDD = 50V.(See Figure13)
Jul,13,2011
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STK103
Ver 1.1
10
5
ID, Drain Current(A)
4
ID, Drain Current(A)
VGS = 5V
VGS = 10V
VGS = 4.5V
3
VGS = 4V
2
VGS = 3.5V
1
8
6
4
Tj=125 C
2
25 C
-55 C
VGS = 3V
0
0
0
1.0
0.5
2.0
1.5
2.5
3.0
0
600
2.0
500
1.8
400
VGS = 4.5V
200
VGS = 10V
100
5
6
VGS=10V
ID=1.00A
1.6
1.4
VGS=4.5V
ID=0.82A
1.2
1.0
0
0.1
1
2
3
4
0.8
5
0
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-25
0
25
50
75
100
125
150
Figure 4. On-Resistance Variation with
Drain Current and Temperature
BVDSS, Normalized
Drain-Source Breakdown Voltage
VDS = VGS
ID = 250uA
75
Tj, Junction Temperature ( C)
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
1.3
50
25
Tj( C)
ID, Drain Current (A)
Vth, Normalized
Gate-Source Threshold Voltage
4
Figure 2. Transfer Characteristics
RDS(ON), On-Resistance
Normalized
R DS(on)(m Ω)
Figure 1. Output Characteristics
0.5
-50
3
VGS, Gate-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
300
2
1
100 125 150
Tj, Junction Temperature ( C)
1.3
ID = 250uA
1.2
1.1
1.0
0.9
0.8
0.7
-50
-25
0
25
50
75 100 125 150
Tj, Junction Temperature ( C)
Figure 6. Breakdown Voltage Variation
with Temperature
Figure 5. Gate Threshold Variation
with Temperature
Jul,13,2011
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STK103
Ver 1.1
600
20.0
ID = 1.00A
Is, Source-drain current (A)
RDS(on)(m Ω)
500
400
125 C
300
75 C
25 C
200
100
0
5.0
25 C
125 C
75 C
4
2
0
8
6
1.0
10
0
0.4
0.8
1.2
1.6
2.0
VGS, Gate-Sorce Voltage(V)
VSD, Body Diode Forward Voltage(V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
Figure 8. Body Diode Forward Voltage
Variation with Source Current
10
VGS, Gate to Source Voltage (V)
600
500
C, Capacitance (pF)
10.0
400
Ciss
300
200
100
Coss
VDS = 50V
ID = 1.00A
8
6
4
2
Crss
0
0
0
5
10
15
20
25
30
0
1
2
3
4
5
6
7
VDS, Drain-to Source Voltage(V)
Qg, Total Gate Charge(nC)
Figure 9. Capacitance
Figure 10. Gate Charge
8
300
10
ID, Drain Current (A)
Switching Time(ns)
100
TD(off )
10
Tr
TD(on)
Tf
V DS =50V,I D =1.0A
V GS =10V
1
1
10
R
Rg, Gate Resistance(Ω)
(O
N)
Lim
it
1m
10
1
DC
0.1
0.01
0.1
100
DS
10
1s
10
0m
s
ms
s
s
VGS = 10V
Single Pulse
TA = 25 C
1
10
100
VDS, Drain-Source Voltage (V)
Figure 11. switching characteristics
Figure 12. Maximum Safe
Operating Area
Jul,13,2011
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STK103
Ver 1.1
V (B R ) DS S
tp
L
V DS
D .U .T
RG
+
-
IA S
VDD
20V
0.0 1
tp
I AS
Unclamped Inductive Test Circuit
Unclamped Inductive Waveforms
Figure 13a.
10
Figure 13b.
0
r(t),Normalized Effective
Transient Thermal Impedance
D=0.5
0.2
10
0.1
-1
0.05
0.02
PDM
0.01
10
t1
-2
t2
1. RɞJA (t)=r (t) * RɞJA
2. RɞJA=See Datasheet
3. TJM-TA = P* RɞJA (t)
4. Duty Cycle, D=t1/t2
Single Pulse
10
-3
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
Square Wave Pulse Duration (msec)
Figure 14. Normalized Thermal Transient Impedance Curve
Jul,13,2011
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STK103
Ver 1.1
PACKAGE OUTLINE DIMENSIONS
SOT-89
A
B
C1
F1
F2
A1
C
H
B1
F
E
D
G
R E F.
DIME NS IONS
Milimeters
MIN.
A
A1
B
B1
C
C1
D
E
F
F1
F2
G
H
MAX.
4.60
4.25
1.70
1.50
2.60
1.20
4.40
4.05
1.50
1.30
2.40
0.89
3.00 R E F .
1.50 R E F .
0.52
1.60
0.41
0.40
1.40
0.35
5± T Y P .
0.70 R E F .
Jul,13,2011
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STK103
Ver 1.1
SOT-89 Tape
B
SOT-89 Carrier Tape
C
E
A
K
G
F
H
A
D
B
J
B2
B3
B1
8± Max.
A1
12± Max.
SECTION A-A
SECTION B-B
unit:р
PACKAGE
SOP 8N
150п
A1
4.85
²0.10
B1
4.45
²0.10
B2
1.85
²0.10
C
4.0
²0.10
D
8.0
²0.10
E
B3
2.0
²0.05
0.254
²0.02
F
1.75
!²0.10
G
5.5
²0.05
H
1.50
²0.10
J
1.5
²0.25
K
10C
12.0
+0.30
.0.10
40.0
²0.20
Jun,13,2011
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