Green Product STU/D15L01 S a mHop Microelectronics C orp. Ver 1.2 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low R DS(ON). PRODUCT SUMMARY V DSS 100V R DS(ON) (m Ω) Max ID Rugged and reliable. 145 @ VGS=10V TO-252 and TO-251 Package. 195 @ VGS=4.5V Halogen free. 15A G G D S STU SERIES TO - 252AA( D - PAK ) S STD SERIES TO - 251 ( I - PAK ) ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol Parameter Limit Units VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 14.7 A 13.6 A IDM EAS -Pulsed TC=25°C TC=70°C ac c Single Pulse Avalanche Energy a PD Maximum Power Dissipation TJ, TSTG Operating Junction and Storage Temperature Range d 59 A 25 mJ TC=25°C 50 W TC=70°C 32 W -55 to 150 °C 3.6 °C/W 50 °C/W THERMAL CHARACTERISTICS R JC R JA Thermal Resistance, Junction-to-Case a Thermal Resistance, Junction-to-Ambient a Details are subject to change without notice. May,16,2014 1 www.samhop.com.tw STU/D15L01 Ver 1.2 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage Conditions Min VGS=0V , ID=250uA 100 IDSS Zero Gate Voltage Drain Current VDS=80V , VGS=0V IGSS Gate-Body Leakage Current VGS= ±20V , VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance Max Units V uA 1 ±100 nA 1.6 3.0 V VGS=10V , ID=6A 100 145 m ohm VGS=4.5V , ID=5A 150 195 m ohm VDS=10V , ID=6A 5 S VDS=25V,VGS=0V f=1.0MHz 480 47 29 pF pF pF 9.8 10.2 ns ns 18 ns 8.5 ns VDS=50V,ID=6A,VGS=10V 7.8 nC VDS=50V,ID=6A, VGS=10V 1.3 nC 2.9 nC VDS=VGS , ID=250uA 1 Typ b DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time tf Qg Fall Time Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge b VDD=50V ID=1A VGS=10V RGEN= 6 ohm DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS VSD Diode Forward Voltage VGS=0V,IS=1A 0.775 1.3 V Notes a.Surface Mounted on FR4 Board of 1 inch2 , 1oz. b.Guaranteed by design, not subject to production testing. c.Drain current limited by maximum junction temperature. d.Starting TJ=25°C,L=0.5mH,VDD = 50V.(See Figure13) May,16,2014 2 www.samhop.com.tw STU/D15L01 Ver 1.2 10 15 12 ID, Drain Current(A) VGS=7V 9 VGS=6V 6 VGS=5V 3 0 RDS(on)(m Ω) VGS=8V 0 2.0 1.5 1.0 0.5 2.5 8 6 Tj=125 C 4 -55 C 2 0 3.0 0 2.4 3.6 4.8 7.2 6.0 Figure 1. Output Characteristics Figure 2. Transfer Characteristics 2.0 200 1.8 160 120 V G S =10V 80 40 V G S =10V I D =6A 1.6 1.4 1.2 1.0 3 1 6 9 12 0 15 0 I D, Drain Current(A) BVDSS, Normalized Drain-Source Breakdown Voltage V DS =V G S I D =250uA 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 50 75 100 125 150 T j ( °C ) Figure 4. On-Resistance Variation with Drain Current and Temperature 1.6 1.4 25 Tj, Junction Temperature(° C ) Figure 3. On-Resistance vs. Drain Current and Gate Voltage Vth, Normalized Gate-Source Threshold Voltage 1.2 V GS, Gate-to-Source Voltage(V) 240 1 25 C VDS, Drain-to-Source Voltage(V) R DS(on), On-Resistance Normalized ID, Drain Current(A) VGS=10V 75 100 125 150 Tj, Junction Temperature( ° C ) 1.15 I D =250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature(° C ) Figure 5. Gate Threshold Variation with Temperature Figure 6. Breakdown Voltage Variation with Temperature May,16,2014 3 www.samhop.com.tw STU/D15L01 Ver 1.2 20.0 420 Is, Source-drain current(A) I D =6A 350 125 C 210 75 C 140 25 C 70 0 2 4 6 8 0.25 0.50 0.75 1.00 1.25 Figure 7. On-Resistance vs. Gate-Source Voltage Figure 8. Body Diode Forward Voltage Variation with Source Current V GS, Gate to Source Voltage(V) Ciss 450 300 Coss Crss 10 VDS=50V ID=6A 8 6 4 2 0 0 5 10 15 20 25 30 0 1.5 3.0 4.5 6.0 7.5 9.0 10.5 12.0 VDS, Drain-to-Source Voltage(V) Qg, Total Gate Charge(nC) Figure 9. Capacitance Figure 10. Gate Charge 80 Tf 1m it 10 L im I D, Drain Current(A) Tr s TD(on) 10 0u TD(off ) 10 100 N) 300 (O C, Capacitance(pF) 0 VSD, Body Diode Forward Voltage(V) 150 Switching Time(ns) 25 C 75 C VGS, Gate-to-Source Voltage(V) 750 0 125 C 1.0 10 900 600 5.0 S 0 10.0 RD RDS(on)(m Ω) 280 10 s m DC s 1 VGS=10V Single Pulse TA=25 C VDS=50V,ID=1A VGS=10V 0.1 1 1 10 100 0.1 1 10 100 Rg, Gate Resistance(Ω) V DS, Drain-Source Voltage(V) Figure 11. switching characteristics Figure 12. Maximum Safe Operating Area May,16,2014 4 www.samhop.com.tw STU/D15L01 Ver 1.2 V ( BR )D S S tp L V DS D .U .T RG + - IA S VDD 20V tp 0.0 1 IAS Unclamped Inductive Test Circuit Unclamped Inductive Waveforms Figure 13a. Figure 13b. 2 1 Normalized Transient Thermal Resistance D=0.5 0.2 0.1 P DM 0.1 0.05 t1 t2 0.02 0.01 1. 2. 3. 4. S ING LE P ULS E R J J A (t)=r (t) * R J J A R J J A =S ee Datas heet T J M-T A = P DM* R J J A (t) Duty C ycle, D=t1/t2 0.01 10 -5 10 -4 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration(sec) Figure 14. Normalized Thermal Transient Impedance Curve May,16,2014 5 www.samhop.com.tw STU/D15L01 Ver 1.2 TO-252 E E1 b3 L3 D1 D H 3 2 1 L4 b b2 e A SYMBOLS c2 A A1 b b2 b3 c c2 D D1 e E E1 H L L1 L2 L3 L4 DETAIL "A" c L2 L L1 A1 MILLIMETERS MIN MAX 2.380 2.200 0.000 0.127 0.635 0.889 0.762 1.143 5.200 5.460 0.450 0.600 0.450 0.580 6.000 6.223 5.380 5.210 2.286 BSC 6.400 6.731 4.318 4.900 9.400 10.400 1.400 1.770 2.743 REF 0.508 BSC 1.270 0.890 0.640 1.010 10 ° 0° DETAIL "A" May,16,2014 6 www.samhop.com.tw STU/D15L01 Ver 1.2 PACKAGE OUTLINE DIMENSIONS TO-251 A E b3 c2 D1 E1 D H 1 2 3 b2 L4 L5 L b e b4 SYMBOL c MILLIMETERS MIN MAX E 6.350 6.731 L 3.700 4.400 L4 0.698 REF L5 0.972 1.226 D 5.970 9.670 6.223 11.450 0.630 0.850 0.760 4.950 1.140 0.450 0.550 H b b2 b3 b4 e A c c2 D1 E1 5.460 2.286 BSC 2.390 2.180 0.400 0.610 0.400 0.610 5.100 4.318 May,16,2014 7 www.samhop.com.tw STU/D15L01 Ver 1.2 TO-251 Tube/TO-252 Tape and Reel Data TO-251 Tube 0.4 5.25 4.5 1.4 2.25 " A" 1.65 5.5 2~ӿ3.0 7.50 1.25 1.90 540 + 1.5 6.60 19.75 TO-252 Carrier Tape B0 E E2 T E1 P1 P2 D1 K0 FEED DIRECTION A0 D0 P0 UNIT:р PACKAGE TO-252 (16 р* A0 6.96 ²0.1 B0 10.49 ²0.1 K0 2.79 ²0.1 D0 D1 E E1 E2 P0 P1 P2 T ӿ2 ӿ1.5 + 0.1 - 0 16.0 ²0.3 1.75 ²0.1 7.5 ²0.15 8.0 ²0.1 4.0 ²0.1 2.0 ²0.15 0.3 ²0.05 TO-252 Reel T S M N K G V R H W UNIT:р TAPE SIZE 16 р REEL SIZE ӿ 330 M ӿ330 ² 0.5 N W ӿ97 ² 1.0 17.0 + 1.5 - 0 T H 2.2 ӿ13.0 + 0.5 - 0.2 K S 10.6 2.0 ²0.5 G R V May,16,2014 8 www.samhop.com.tw STU/D15L01 Ver 1.2 TOP MARKING DEFINITION TO-252 SamHop Logo STU15L01 XXXXXX Product No. SMC internal code No. (A,B,C...Z) Wafer Lot No. Production Date (1,2 ~ 9, A,B.....) Production Month (1,2 ~ 9, A,B,C) Production Year (2009 = 9, 2010 = A.....) May,16,2014 9 www.samhop.com.tw STU/D15L01 Ver 1.2 TOP MARKING DEFINITION TO-251 SamHop Logo STD15L01 XXXXXX Product No. SMC internal code No. (A,B,C...Z) Wafer Lot No. Production Date (1,2 ~ 9, A,B.....) Production Month (1,2 ~ 9, A,B,C) Production Year (2009 = 9, 2010 = A.....) May,16,2014 10 www.samhop.com.tw