STU/D15L01

Green
Product
STU/D15L01
S a mHop Microelectronics C orp.
Ver 1.2
N-Channel Logic Level Enhancement Mode Field Effect Transistor
FEATURES
Super high dense cell design for low R DS(ON).
PRODUCT SUMMARY
V DSS
100V
R DS(ON) (m Ω) Max
ID
Rugged and reliable.
145 @ VGS=10V
TO-252 and TO-251 Package.
195 @ VGS=4.5V
Halogen free.
15A
G
G
D
S
STU SERIES
TO - 252AA( D - PAK )
S
STD SERIES
TO - 251 ( I - PAK )
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted )
Symbol
Parameter
Limit
Units
VDS
Drain-Source Voltage
100
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-Continuous
14.7
A
13.6
A
IDM
EAS
-Pulsed
TC=25°C
TC=70°C
ac
c
Single Pulse Avalanche Energy
a
PD
Maximum Power Dissipation
TJ, TSTG
Operating Junction and Storage
Temperature Range
d
59
A
25
mJ
TC=25°C
50
W
TC=70°C
32
W
-55 to 150
°C
3.6
°C/W
50
°C/W
THERMAL CHARACTERISTICS
R JC
R JA
Thermal Resistance, Junction-to-Case
a
Thermal Resistance, Junction-to-Ambient
a
Details are subject to change without notice.
May,16,2014
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STU/D15L01
Ver 1.2
ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted )
Symbol
Parameter
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
VGS=0V , ID=250uA
100
IDSS
Zero Gate Voltage Drain Current
VDS=80V , VGS=0V
IGSS
Gate-Body Leakage Current
VGS= ±20V , VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(th)
RDS(ON)
gFS
Drain-Source On-State Resistance
Forward Transconductance
Max
Units
V
uA
1
±100
nA
1.6
3.0
V
VGS=10V , ID=6A
100
145
m ohm
VGS=4.5V , ID=5A
150
195
m ohm
VDS=10V , ID=6A
5
S
VDS=25V,VGS=0V
f=1.0MHz
480
47
29
pF
pF
pF
9.8
10.2
ns
ns
18
ns
8.5
ns
VDS=50V,ID=6A,VGS=10V
7.8
nC
VDS=50V,ID=6A,
VGS=10V
1.3
nC
2.9
nC
VDS=VGS , ID=250uA
1
Typ
b
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
tD(ON)
Turn-On Delay Time
tr
Rise Time
tD(OFF)
Turn-Off Delay Time
tf
Qg
Fall Time
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
b
VDD=50V
ID=1A
VGS=10V
RGEN= 6 ohm
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD
Diode Forward Voltage
VGS=0V,IS=1A
0.775
1.3
V
Notes
a.Surface Mounted on FR4 Board of 1 inch2 , 1oz.
b.Guaranteed by design, not subject to production testing.
c.Drain current limited by maximum junction temperature.
d.Starting TJ=25°C,L=0.5mH,VDD = 50V.(See Figure13)
May,16,2014
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STU/D15L01
Ver 1.2
10
15
12
ID, Drain Current(A)
VGS=7V
9
VGS=6V
6
VGS=5V
3
0
RDS(on)(m Ω)
VGS=8V
0
2.0
1.5
1.0
0.5
2.5
8
6
Tj=125 C
4
-55 C
2
0
3.0
0
2.4
3.6
4.8
7.2
6.0
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
2.0
200
1.8
160
120
V G S =10V
80
40
V G S =10V
I D =6A
1.6
1.4
1.2
1.0
3
1
6
9
12
0
15
0
I D, Drain Current(A)
BVDSS, Normalized
Drain-Source Breakdown Voltage
V DS =V G S
I D =250uA
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25
0
25
50
50
75
100
125
150
T j ( °C )
Figure 4. On-Resistance Variation with Drain
Current and Temperature
1.6
1.4
25
Tj, Junction Temperature(° C )
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
Vth, Normalized
Gate-Source Threshold Voltage
1.2
V GS, Gate-to-Source Voltage(V)
240
1
25 C
VDS, Drain-to-Source Voltage(V)
R DS(on), On-Resistance
Normalized
ID, Drain Current(A)
VGS=10V
75 100 125 150
Tj, Junction Temperature( ° C )
1.15
I D =250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25
0
25
50
75
100 125 150
Tj, Junction Temperature(° C )
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Breakdown Voltage Variation
with Temperature
May,16,2014
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STU/D15L01
Ver 1.2
20.0
420
Is, Source-drain current(A)
I D =6A
350
125 C
210
75 C
140
25 C
70
0
2
4
6
8
0.25
0.50
0.75
1.00
1.25
Figure 7. On-Resistance vs.
Gate-Source Voltage
Figure 8. Body Diode Forward Voltage
Variation with Source Current
V GS, Gate to Source Voltage(V)
Ciss
450
300
Coss
Crss
10
VDS=50V
ID=6A
8
6
4
2
0
0
5
10
15
20
25
30
0
1.5 3.0 4.5 6.0 7.5 9.0 10.5 12.0
VDS, Drain-to-Source Voltage(V)
Qg, Total Gate Charge(nC)
Figure 9. Capacitance
Figure 10. Gate Charge
80
Tf
1m
it
10
L im
I D, Drain Current(A)
Tr
s
TD(on)
10
0u
TD(off )
10
100
N)
300
(O
C, Capacitance(pF)
0
VSD, Body Diode Forward Voltage(V)
150
Switching Time(ns)
25 C
75 C
VGS, Gate-to-Source Voltage(V)
750
0
125 C
1.0
10
900
600
5.0
S
0
10.0
RD
RDS(on)(m Ω)
280
10
s
m
DC s
1
VGS=10V
Single Pulse
TA=25 C
VDS=50V,ID=1A
VGS=10V
0.1
1
1
10
100
0.1
1
10
100
Rg, Gate Resistance(Ω)
V DS, Drain-Source Voltage(V)
Figure 11. switching characteristics
Figure 12. Maximum Safe Operating Area
May,16,2014
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STU/D15L01
Ver 1.2
V ( BR )D S S
tp
L
V DS
D .U .T
RG
+
-
IA S
VDD
20V
tp
0.0 1
IAS
Unclamped Inductive Test Circuit
Unclamped Inductive Waveforms
Figure 13a.
Figure 13b.
2
1
Normalized Transient
Thermal Resistance
D=0.5
0.2
0.1
P DM
0.1
0.05
t1
t2
0.02
0.01
1.
2.
3.
4.
S ING LE P ULS E
R J J A (t)=r (t) * R J J A
R J J A =S ee Datas heet
T J M-T A = P DM* R J J A (t)
Duty C ycle, D=t1/t2
0.01
10
-5
10
-4
10
-3
10
-2
10
-1
1
10
Square Wave Pulse Duration(sec)
Figure 14. Normalized Thermal Transient Impedance Curve
May,16,2014
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STU/D15L01
Ver 1.2
TO-252
E
E1
b3
L3
D1
D
H
3
2
1
L4
b
b2
e
A
SYMBOLS
c2
A
A1
b
b2
b3
c
c2
D
D1
e
E
E1
H
L
L1
L2
L3
L4
DETAIL "A"
c
L2
L
L1
A1
MILLIMETERS
MIN
MAX
2.380
2.200
0.000
0.127
0.635
0.889
0.762
1.143
5.200
5.460
0.450
0.600
0.450
0.580
6.000
6.223
5.380
5.210
2.286 BSC
6.400
6.731
4.318
4.900
9.400
10.400
1.400
1.770
2.743 REF
0.508 BSC
1.270
0.890
0.640
1.010
10 °
0°
DETAIL "A"
May,16,2014
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STU/D15L01
Ver 1.2
PACKAGE OUTLINE DIMENSIONS
TO-251
A
E
b3
c2
D1
E1
D
H
1
2
3
b2
L4
L5
L
b
e
b4
SYMBOL
c
MILLIMETERS
MIN
MAX
E
6.350
6.731
L
3.700
4.400
L4
0.698 REF
L5
0.972
1.226
D
5.970
9.670
6.223
11.450
0.630
0.850
0.760
4.950
1.140
0.450
0.550
H
b
b2
b3
b4
e
A
c
c2
D1
E1
5.460
2.286 BSC
2.390
2.180
0.400
0.610
0.400
0.610
5.100
4.318
May,16,2014
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STU/D15L01
Ver 1.2
TO-251 Tube/TO-252 Tape and Reel Data
TO-251 Tube
0.4
5.25
4.5
1.4
2.25
" A"
1.65
5.5
2~ӿ3.0
7.50
1.25
1.90
540 + 1.5
6.60
19.75
TO-252 Carrier Tape
B0
E
E2
T
E1
P1
P2
D1
K0
FEED DIRECTION
A0
D0
P0
UNIT:р
PACKAGE
TO-252
(16 р*
A0
6.96
²0.1
B0
10.49
²0.1
K0
2.79
²0.1
D0
D1
E
E1
E2
P0
P1
P2
T
ӿ2
ӿ1.5
+ 0.1
- 0
16.0
²0.3
1.75
²0.1
7.5
²0.15
8.0
²0.1
4.0
²0.1
2.0
²0.15
0.3
²0.05
TO-252 Reel
T
S
M
N
K
G
V
R
H
W
UNIT:р
TAPE SIZE
16 р
REEL SIZE
ӿ 330
M
ӿ330
² 0.5
N
W
ӿ97
² 1.0
17.0
+ 1.5
- 0
T
H
2.2
ӿ13.0
+ 0.5
- 0.2
K
S
10.6
2.0
²0.5
G
R
V
May,16,2014
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STU/D15L01
Ver 1.2
TOP MARKING DEFINITION
TO-252
SamHop Logo
STU15L01
XXXXXX
Product No.
SMC internal code No. (A,B,C...Z)
Wafer Lot No.
Production Date (1,2 ~ 9, A,B.....)
Production Month (1,2 ~ 9, A,B,C)
Production Year (2009 = 9, 2010 = A.....)
May,16,2014
9
www.samhop.com.tw
STU/D15L01
Ver 1.2
TOP MARKING DEFINITION
TO-251
SamHop Logo
STD15L01
XXXXXX
Product No.
SMC internal code No. (A,B,C...Z)
Wafer Lot No.
Production Date (1,2 ~ 9, A,B.....)
Production Month (1,2 ~ 9, A,B,C)
Production Year (2009 = 9, 2010 = A.....)
May,16,2014
10
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