STU666S STD666S

Green
Product
STU666S
STD666S
SamHop Microelectronics Corp.
Ver 1.0
N-Channel Logic Level Enhancement Mode Field Effect Transistor
FEATURES
Super high dense cell design for low RDS(ON).
PRODUCT SUMMARY
VDSS
RDS(ON) (mΩ) Max
ID
Rugged and reliable.
101 @ VGS=10V
60V
TO-252 and TO-251 Package.
6A
126 @ VGS=4.5V
G
G
D
S
STU SERIES
TO-252AA(D-PAK)
S
STD SERIES
TO-251(I-PAK)
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol
Parameter
Limit
Units
VDS
Drain-Source Voltage
60
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-Continuous
6
A
4.8
A
IDM
EAS
-Pulsed
TC=25°C
TC=70°C
a e
b
d
17
A
12
mJ
TC=25°C
42
W
TC=70°C
27
W
-55 to 150
°C
Thermal Resistance, Junction-to-Case
3
°C/W
Thermal Resistance, Junction-to-Ambient
50
°C/W
Single Pulse Avalanche Energy
PD
Maximum Power Dissipation
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JC
R JA
Details are subject to change without notice.
Jul,15,2013
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STU666S
STD666S
Ver 1.0
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
Symbol
Parameter
Conditions
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
IDSS
Zero Gate Voltage Drain Current
VDS=48V , VGS=0V
IGSS
VGS= ±20V , VDS=0V
Gate-Body Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(th)
VGS=0V , ID=250uA
VDS=VGS , ID=250uA
RDS(ON)
Drain-Source On-State Resistance
gFS
Forward Transconductance
Min
Typ
Max
60
1
Units
V
1
uA
±100
nA
3
V
VGS=10V , ID=3A
81
101
m ohm
VGS=4.5V , ID=2.7A
93
126
m ohm
VDS=10V , ID=3A
15
S
VDS=25V,VGS=0V
f=1.0MHz
494
41
30
pF
pF
pF
10.3
ns
10.7
19
ns
8.4
ns
7.2
3.8
nC
1.7
c
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
Output
Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
tD(ON)
Turn-On Delay Time
tr
Rise Time
tD(OFF)
Turn-Off Delay Time
tf
Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
c
VDD=30V
ID=1A
VGS=10V
RGEN= 6 ohm
VDS=30V,ID=3A,VGS=10V
VDS=30V,ID=3A,VGS=4.5V
VDS=30V,ID=3A,
VGS=10V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Diode Forward Voltage
VSD
VGS=0V,IS=2A
ns
1.1
nC
nC
2.1
nC
0.82
1.3
V
Notes
_ 10sec.
a.Surface Mounted on FR4 Board,t <
_ 300us, Duty Cycle <
_ 2%.
b.Pulse Test:Pulse Width <
c.Guaranteed by design, not subject to production testing.
d.Starting TJ=25°C,L=0.5mH,VDD = 30V.(See Figure13)
e.Drain current limited by maximum junction temperature.
Jul,15,2013
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STU666S
STD666S
Ver 1.0
15
15
VGS=4.5V
VGS=4V
VGS=3.5V
9
6
VGS=3V
3
0
RDS(on)(m Ω)
ID, Drain Current(A)
12
0
0.5
1
2
1.5
2.5
12
9
25 C
3
0
1.6
0.8
3.2
2.4
4.8
4.0
VDS, Drain-to-Source Voltage(V)
V GS, Gate-to-Source Voltage(V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
240
2.25
200
2.00
160
120
V G S =4.5V
80
V G S =10V
40
V G S =10V
I D =3A
1.75
1.50
1.25
V G S =4.5V
I D =2.7A
1.00
1
0.1
6
3
9
12
0
15
I D, Drain Current(A)
V DS =V G S
I D =250uA
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25
0
25
50
75
25
50
75
100
125
150
T j ( °C )
Figure 4. On-Resistance Variation with Drain
Current and Temperature
BVDSS, Normalized
Drain-Source Breakdown Voltage
1.6
0
Tj, Junction Temperature(° C )
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
Vth, Normalized
Gate-Source Threshold Voltage
-55 C
Tj=125 C
6
0
3
R DS(on), On-Resistance
Normalized
ID, Drain Current(A)
VGS=10V
100 125 150
Tj, Junction Temperature( ° C )
1.15
I D =250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25
0
25
50
75 100 125 150
Tj, Junction Temperature(° C )
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Breakdown Voltage Variation
with Temperature
Jul,15,2013
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STU666S
STD666S
Ver 1.0
20
360
Is, Source-drain current(A)
ID=3A
RDS(on)(m Ω )
300
240
125 C
180
120
60
25 C
75 C
10
5
75 C
125 C
0
4
2
0
6
8
0
10
Ciss
480
360
240
Coss
120
Crss
0
5
10
15
20
25
0.9
1.2
1.5
10
VDS=30V
ID=3A
8
6
4
2
0
30
0
1
2
3
4
5
6
7
VDS, Drain-to-Source Voltage(V)
Qg, Total Gate Charge(nC)
Figure 9. Capacitance
Figure 10. Gate Charge
8
10
Tf
Lim
(O
N)
m
s
S
1
VGS=10V
Single Pulse
TC=25 C
VDS=30V,ID=1A
VGS=10V
1
10
s
TD(on)
1m
Tr
10
DC
ID, Drain Current(A)
TD(off )
it
100
100
RD
C, Capacitance(pF)
VGS, Gate to Source Voltage(V)
720
0
0.6
Figure 8. Body Diode Forward Voltage
Variation with Source Current
Figure 7. On-Resistance vs.
Gate-Source Voltage
600
0.3
VSD, Body Diode Forward Voltage(V)
VGS, Gate-to-Source Voltage(V)
Switching Time(ns)
25 C
1
0.1
1
10
100
0.1
Rg, Gate Resistance( Ω )
1
10
100
VDS, Drain-Source Voltage(V)
Figure 11. switching characteristics
Figure 12. Maximum Safe Operating Area
Jul,15,2013
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STU666S
STD666S
Ver 1.0
V(BR)DSS
tp
L
VDS
D.U.T
RG
+
- VDD
IAS
20V
tp
0.01
IAS
Unclamped Inductive Waveforms
Uncamped Inductive Test Circuit
Figure 13b.
Figure 13a.
2
1
Normalized Transient
Thermal Resistance
D=0.5
0.2
0.1
P DM
0.1
0.05
t1
t2
0.02
0.01
1. R JA(t)=r(t)* R JA
2. R JA=See Datasheet
3. TJM-TA=PDM*R JA(t)
4. Duty Cycle,D=t1/t2
SINGLE PULSE
0.01
10
-5
10
-4
10
-3
10
-2
10
-1
10
1
Square Wave Pulse Duration(sec)
Figure 14. Normalized Thermal Transient Impedance Curve
Jul,15,2013
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STU666S
STD666S
Ver 1.0
E
TO-252
A
b2
C
L3
1
D1
D
E1
H
1
2
3
DETAIL "A"
L4
b1
e
b
L2
L
A1
DETAIL "A"
L1
SYMBOLS
A
A1
b
b1
b2
C
D
D1
E
E1
e
H
L
L1
L2
L3
L4
1
MILLIMETERS
MIN
2.100
0.000
0.400
0.770
4.800
0.400
5.300
4.900
6.300
4.400
2.290
8.900
1.397
2.743
0.508
0.890
0.500
0°
7°
INCHES
MAX
2.500
0.200
0.889
1.140
5.460
0.600
6.223
5.515
6.731
5.004
REF
10.400
1.770
REF.
REF.
1.700
1.100
10°
REF.
MIN
0.083
0.000
0.016
0.030
0.189
0.016
0.209
0.193
0.248
0.173
0.090
0.350
0.055
0.108
0.020
0.035
0.020
0°
7°
MAX
0.098
0.008
0.035
0.045
0.215
0.024
0.245
0.217
0.265
0.197
BSC
0.409
0.070
REF.
REF.
0.067
0.043
10 °
REF.
Jul,15,2013
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STU666S
STD666S
Ver 1.0
PACKAGE OUTLINE DIMENSIONS
TO-251
A
E
b3
c2
D1
E1
D
H
1
2
3
b2
L5
L4
L
b
e
SYMBOL
b4
c
MILLIMETERS
INCHES
MIN
MAX
MIN
MAX
E
6.400
6.731
0.252
0.265
L
3.980
4.280
0.157
0.169
L4
0.698 REF
0.027 REF
0.038
0.236
0.048
0.245
0.435
0.450
0.880
0.025
0.035
1.140
5.460
0.030
0.205
0.045
0.215
0.550
0.018
0.022
L5
0.972
1.226
D
6.000
11.050
6.223
11.450
0.640
0.770
5.210
0.450
H
b
b2
b3
b4
e
A
c
c2
D1
E1
2.286 BSC
2.380
2.200
0.400
0.600
0.400
0.600
5.100
4.400
0.090 BSC
0.087
0.094
0.016
0.016
0.201
0.173
0.024
0.024
Jul,15,2013
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STU666S
STD666S
Ver 1.0
TO-251 Tube/TO-252 Tape and Reel Data
TO-251 Tube
0.4
5.25
4.5
1.4
2.25
" A"
1.65
5.5
2~ӿ3.0
7.50
1.25
1.90
540 + 1.5
6.60
19.75
TO-252 Carrier Tape
B0
E
E2
T
E1
P1
P2
D1
K0
FEED DIRECTION
A0
D0
P0
UNIT:р
PACKAGE
TO-252
(16 р*
A0
6.96
²0.1
B0
10.49
²0.1
K0
2.79
²0.1
D0
D1
E
E1
E2
P0
P1
P2
T
ӿ2
ӿ1.5
+ 0.1
- 0
16.0
²0.3
1.75
²0.1
7.5
²0.15
8.0
²0.1
4.0
²0.1
2.0
²0.15
0.3
²0.05
TO-252 Reel
T
S
M
N
K
G
V
R
H
W
UNIT:р
TAPE SIZE
16 р
REEL SIZE
ӿ 330
M
ӿ330
² 0.5
N
W
ӿ97
² 1.0
17.0
+ 1.5
- 0
T
H
2.2
ӿ13.0
+ 0.5
- 0.2
K
S
10.6
2.0
²0.5
G
R
V
Jul,15,2013
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STU666S
STD666S
Ver 1.0
TOP MARKING DEFINITION
TO-252
SamHop Logo
STU666S
XXXXXX
Product No.
SMC internal code No. (A,B,C...Z)
Wafer Lot No.
Production Date (1,2 ~ 9, A,B.....)
Production Month (1,2 ~ 9, A,B,C)
Production Year (2009 = 9, 2010 = A.....)
Jul,15,2013
9
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STU666S
STD666S
Ver 1.0
TOP MARKING DEFINITION
TO-251
SamHop Logo
STD666S
XXXXXX
Product No.
SMC internal code No. (A,B,C...Z)
Wafer Lot No.
Production Date (1,2 ~ 9, A,B.....)
Production Month (1,2 ~ 9, A,B,C)
Production Year (2009 = 9, 2010 = A.....)
Jul,15,2013
10
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