Green Product STU666S STD666S SamHop Microelectronics Corp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low RDS(ON). PRODUCT SUMMARY VDSS RDS(ON) (mΩ) Max ID Rugged and reliable. 101 @ VGS=10V 60V TO-252 and TO-251 Package. 6A 126 @ VGS=4.5V G G D S STU SERIES TO-252AA(D-PAK) S STD SERIES TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Symbol Parameter Limit Units VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 6 A 4.8 A IDM EAS -Pulsed TC=25°C TC=70°C a e b d 17 A 12 mJ TC=25°C 42 W TC=70°C 27 W -55 to 150 °C Thermal Resistance, Junction-to-Case 3 °C/W Thermal Resistance, Junction-to-Ambient 50 °C/W Single Pulse Avalanche Energy PD Maximum Power Dissipation TJ, TSTG Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JC R JA Details are subject to change without notice. Jul,15,2013 1 www.samhop.com.tw STU666S STD666S Ver 1.0 ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted) Symbol Parameter Conditions OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current VDS=48V , VGS=0V IGSS VGS= ±20V , VDS=0V Gate-Body Leakage Current ON CHARACTERISTICS Gate Threshold Voltage VGS(th) VGS=0V , ID=250uA VDS=VGS , ID=250uA RDS(ON) Drain-Source On-State Resistance gFS Forward Transconductance Min Typ Max 60 1 Units V 1 uA ±100 nA 3 V VGS=10V , ID=3A 81 101 m ohm VGS=4.5V , ID=2.7A 93 126 m ohm VDS=10V , ID=3A 15 S VDS=25V,VGS=0V f=1.0MHz 494 41 30 pF pF pF 10.3 ns 10.7 19 ns 8.4 ns 7.2 3.8 nC 1.7 c DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge c VDD=30V ID=1A VGS=10V RGEN= 6 ohm VDS=30V,ID=3A,VGS=10V VDS=30V,ID=3A,VGS=4.5V VDS=30V,ID=3A, VGS=10V DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Diode Forward Voltage VSD VGS=0V,IS=2A ns 1.1 nC nC 2.1 nC 0.82 1.3 V Notes _ 10sec. a.Surface Mounted on FR4 Board,t < _ 300us, Duty Cycle < _ 2%. b.Pulse Test:Pulse Width < c.Guaranteed by design, not subject to production testing. d.Starting TJ=25°C,L=0.5mH,VDD = 30V.(See Figure13) e.Drain current limited by maximum junction temperature. Jul,15,2013 2 www.samhop.com.tw STU666S STD666S Ver 1.0 15 15 VGS=4.5V VGS=4V VGS=3.5V 9 6 VGS=3V 3 0 RDS(on)(m Ω) ID, Drain Current(A) 12 0 0.5 1 2 1.5 2.5 12 9 25 C 3 0 1.6 0.8 3.2 2.4 4.8 4.0 VDS, Drain-to-Source Voltage(V) V GS, Gate-to-Source Voltage(V) Figure 1. Output Characteristics Figure 2. Transfer Characteristics 240 2.25 200 2.00 160 120 V G S =4.5V 80 V G S =10V 40 V G S =10V I D =3A 1.75 1.50 1.25 V G S =4.5V I D =2.7A 1.00 1 0.1 6 3 9 12 0 15 I D, Drain Current(A) V DS =V G S I D =250uA 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 75 25 50 75 100 125 150 T j ( °C ) Figure 4. On-Resistance Variation with Drain Current and Temperature BVDSS, Normalized Drain-Source Breakdown Voltage 1.6 0 Tj, Junction Temperature(° C ) Figure 3. On-Resistance vs. Drain Current and Gate Voltage Vth, Normalized Gate-Source Threshold Voltage -55 C Tj=125 C 6 0 3 R DS(on), On-Resistance Normalized ID, Drain Current(A) VGS=10V 100 125 150 Tj, Junction Temperature( ° C ) 1.15 I D =250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature(° C ) Figure 5. Gate Threshold Variation with Temperature Figure 6. Breakdown Voltage Variation with Temperature Jul,15,2013 3 www.samhop.com.tw STU666S STD666S Ver 1.0 20 360 Is, Source-drain current(A) ID=3A RDS(on)(m Ω ) 300 240 125 C 180 120 60 25 C 75 C 10 5 75 C 125 C 0 4 2 0 6 8 0 10 Ciss 480 360 240 Coss 120 Crss 0 5 10 15 20 25 0.9 1.2 1.5 10 VDS=30V ID=3A 8 6 4 2 0 30 0 1 2 3 4 5 6 7 VDS, Drain-to-Source Voltage(V) Qg, Total Gate Charge(nC) Figure 9. Capacitance Figure 10. Gate Charge 8 10 Tf Lim (O N) m s S 1 VGS=10V Single Pulse TC=25 C VDS=30V,ID=1A VGS=10V 1 10 s TD(on) 1m Tr 10 DC ID, Drain Current(A) TD(off ) it 100 100 RD C, Capacitance(pF) VGS, Gate to Source Voltage(V) 720 0 0.6 Figure 8. Body Diode Forward Voltage Variation with Source Current Figure 7. On-Resistance vs. Gate-Source Voltage 600 0.3 VSD, Body Diode Forward Voltage(V) VGS, Gate-to-Source Voltage(V) Switching Time(ns) 25 C 1 0.1 1 10 100 0.1 Rg, Gate Resistance( Ω ) 1 10 100 VDS, Drain-Source Voltage(V) Figure 11. switching characteristics Figure 12. Maximum Safe Operating Area Jul,15,2013 4 www.samhop.com.tw STU666S STD666S Ver 1.0 V(BR)DSS tp L VDS D.U.T RG + - VDD IAS 20V tp 0.01 IAS Unclamped Inductive Waveforms Uncamped Inductive Test Circuit Figure 13b. Figure 13a. 2 1 Normalized Transient Thermal Resistance D=0.5 0.2 0.1 P DM 0.1 0.05 t1 t2 0.02 0.01 1. R JA(t)=r(t)* R JA 2. R JA=See Datasheet 3. TJM-TA=PDM*R JA(t) 4. Duty Cycle,D=t1/t2 SINGLE PULSE 0.01 10 -5 10 -4 10 -3 10 -2 10 -1 10 1 Square Wave Pulse Duration(sec) Figure 14. Normalized Thermal Transient Impedance Curve Jul,15,2013 5 www.samhop.com.tw STU666S STD666S Ver 1.0 E TO-252 A b2 C L3 1 D1 D E1 H 1 2 3 DETAIL "A" L4 b1 e b L2 L A1 DETAIL "A" L1 SYMBOLS A A1 b b1 b2 C D D1 E E1 e H L L1 L2 L3 L4 1 MILLIMETERS MIN 2.100 0.000 0.400 0.770 4.800 0.400 5.300 4.900 6.300 4.400 2.290 8.900 1.397 2.743 0.508 0.890 0.500 0° 7° INCHES MAX 2.500 0.200 0.889 1.140 5.460 0.600 6.223 5.515 6.731 5.004 REF 10.400 1.770 REF. REF. 1.700 1.100 10° REF. MIN 0.083 0.000 0.016 0.030 0.189 0.016 0.209 0.193 0.248 0.173 0.090 0.350 0.055 0.108 0.020 0.035 0.020 0° 7° MAX 0.098 0.008 0.035 0.045 0.215 0.024 0.245 0.217 0.265 0.197 BSC 0.409 0.070 REF. REF. 0.067 0.043 10 ° REF. Jul,15,2013 6 www.samhop.com.tw STU666S STD666S Ver 1.0 PACKAGE OUTLINE DIMENSIONS TO-251 A E b3 c2 D1 E1 D H 1 2 3 b2 L5 L4 L b e SYMBOL b4 c MILLIMETERS INCHES MIN MAX MIN MAX E 6.400 6.731 0.252 0.265 L 3.980 4.280 0.157 0.169 L4 0.698 REF 0.027 REF 0.038 0.236 0.048 0.245 0.435 0.450 0.880 0.025 0.035 1.140 5.460 0.030 0.205 0.045 0.215 0.550 0.018 0.022 L5 0.972 1.226 D 6.000 11.050 6.223 11.450 0.640 0.770 5.210 0.450 H b b2 b3 b4 e A c c2 D1 E1 2.286 BSC 2.380 2.200 0.400 0.600 0.400 0.600 5.100 4.400 0.090 BSC 0.087 0.094 0.016 0.016 0.201 0.173 0.024 0.024 Jul,15,2013 7 www.samhop.com.tw STU666S STD666S Ver 1.0 TO-251 Tube/TO-252 Tape and Reel Data TO-251 Tube 0.4 5.25 4.5 1.4 2.25 " A" 1.65 5.5 2~ӿ3.0 7.50 1.25 1.90 540 + 1.5 6.60 19.75 TO-252 Carrier Tape B0 E E2 T E1 P1 P2 D1 K0 FEED DIRECTION A0 D0 P0 UNIT:р PACKAGE TO-252 (16 р* A0 6.96 ²0.1 B0 10.49 ²0.1 K0 2.79 ²0.1 D0 D1 E E1 E2 P0 P1 P2 T ӿ2 ӿ1.5 + 0.1 - 0 16.0 ²0.3 1.75 ²0.1 7.5 ²0.15 8.0 ²0.1 4.0 ²0.1 2.0 ²0.15 0.3 ²0.05 TO-252 Reel T S M N K G V R H W UNIT:р TAPE SIZE 16 р REEL SIZE ӿ 330 M ӿ330 ² 0.5 N W ӿ97 ² 1.0 17.0 + 1.5 - 0 T H 2.2 ӿ13.0 + 0.5 - 0.2 K S 10.6 2.0 ²0.5 G R V Jul,15,2013 8 www.samhop.com.tw STU666S STD666S Ver 1.0 TOP MARKING DEFINITION TO-252 SamHop Logo STU666S XXXXXX Product No. SMC internal code No. (A,B,C...Z) Wafer Lot No. Production Date (1,2 ~ 9, A,B.....) Production Month (1,2 ~ 9, A,B,C) Production Year (2009 = 9, 2010 = A.....) Jul,15,2013 9 www.samhop.com.tw STU666S STD666S Ver 1.0 TOP MARKING DEFINITION TO-251 SamHop Logo STD666S XXXXXX Product No. SMC internal code No. (A,B,C...Z) Wafer Lot No. Production Date (1,2 ~ 9, A,B.....) Production Month (1,2 ~ 9, A,B,C) Production Year (2009 = 9, 2010 = A.....) Jul,15,2013 10 www.samhop.com.tw