Green Product STU06L01 STD06L01 S a mHop Microelectronics C orp. Ver 1.1 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low R DS(ON). PRODUCT SUMMARY V DSS R DS(ON) (m Ω) Max ID Rugged and reliable. 353 @ VGS=10V 100V TO-252 and TO-251 Package. 6A 553 @ VGS=4.5V G G D S STU SERIES TO - 252AA( D - PAK ) S STD SERIES TO - 251 ( I - PAK ) ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol Parameter Limit Units VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 6 A 4.8 A 17 A 3.6 mJ TC=25°C 42 W TC=70°C 27 W -55 to 150 °C Thermal Resistance, Junction-to-Case 3 °C/W Thermal Resistance, Junction-to-Ambient 50 °C/W IDM -Pulsed TC=25°C TC=70°C a e b EAS Single Pulse Avalanche Energy PD Maximum Power Dissipation TJ, TSTG Operating Junction and Storage Temperature Range d THERMAL CHARACTERISTICS R JC R JA Details are subject to change without notice. Oct,30,2013 1 www.samhop.com.tw STU06L01 STD06L01 Ver 1.1 ELECTRICAL CHARACTERISTICS ( T C=25 °C unless otherwise noted ) Symbol Parameter OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage Conditions Min VGS=0V , ID=10mA 100 IDSS Zero Gate Voltage Drain Current VDS=80V , VGS=0V IGSS Gate-Body Leakage Current VGS= ±20V , VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(th) Drain-Source On-State Resistance gFS Forward Transconductance Max Units V 1 uA ±100 nA 3 V VGS=10V , ID=3A 282 353 m ohm VGS=4.5V , ID=2A 410 553 m ohm VDS=10V , ID=3A 4.5 S VDS=25V,VGS=0V f=1.0MHz 273 25 18 pF pF pF 8.5 ns 9.6 ns 15.2 ns 2.5 ns 4.3 nC 1 nC 1.6 nC VDS=VGS , ID=250uA RDS(ON) Typ 1 2 c DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time c VDD=50V ID=1A VGS=10V RGEN= 6 ohm tD(OFF) Turn-Off Delay Time tf Qg Fall Time Total Gate Charge VDS=50V,ID=3A,VGS=10V Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS=50V,ID=3A, VGS=10V DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Diode Forward Voltage VSD VGS=0V,IS=1A 0.8 1.3 V Notes _ 10sec. a.Surface Mounted on FR4 Board,t < _ 300us, Duty Cycle < _ 2%. b.Pulse Test:Pulse Width < c.Guaranteed by design, not subject to production testing. d.Starting TJ=25°C,L=0.5mH,VDD = 50V.(See Figure13) e.Drain current limited by maximum junction temperature. Oct,30,2013 2 www.samhop.com.tw STU06L01 STD06L01 Ver 1.1 6.0 3.0 ID, Drain Current(A) 2.4 VGS=4V 1.8 1.2 VGS=3.5V 0.6 0 RDS(on)(m Ω) VGS=4.5V 0 0.5 1.5 1 2 2.5 4.8 3.6 Tj=125 C 25 C 1.2 0 0 2 1 4 3 6 5 VDS, Drain-to-Source Voltage(V) V GS, Gate-to-Source Voltage(V) Figure 1. Output Characteristics Figure 2. Transfer Characteristics 900 2.25 750 2.00 600 V G S =4.5V 450 300 V G S =10V 150 V G S =10V I D =3A 1.75 1.50 1.25 V G S =4.5V I D =2A 1.00 0 0.01 1.2 0.6 1.8 2.4 0 3.0 0 I D, Drain Current(A) BVDSS, Normalized Drain-Source Breakdown Voltage V DS =V G S I D =250uA 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 50 75 100 125 150 T j ( °C ) Figure 4. On-Resistance Variation with Drain Current and Temperature 1.6 1.4 25 Tj, Junction Temperature(° C ) Figure 3. On-Resistance vs. Drain Current and Gate Voltage Vth, Normalized Gate-Source Threshold Voltage -55 C 2.4 3 R DS(on), On-Resistance Normalized ID, Drain Current(A) VGS=10V 75 100 125 150 Tj, Junction Temperature( ° C ) 1.15 I D =10mA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature(° C ) Figure 5. Gate Threshold Variation with Temperature Figure 6. Breakdown Voltage Variation with Temperature Oct,30,2013 3 www.samhop.com.tw STU06L01 STD06L01 Ver 1.1 900 20.0 Is, Source-drain current(A) I D =3A RDS(on)(m Ω) 750 600 125 C 450 75 C 300 25 C 150 0 2 6 4 8 25 C 0 0.3 0.6 0.9 1.2 1.5 VGS, Gate-to-Source Voltage(V) VSD, Body Diode Forward Voltage(V) Figure 7. On-Resistance vs. Gate-Source Voltage Figure 8. Body Diode Forward Voltage Variation with Source Current V GS, Gate to Source Voltage(V) 300 Ciss 240 180 120 Coss 60 Crss 10 VDS=50V ID=3A 8 6 4 2 0 0 0 75 C 125 C 10 360 C, Capacitance(pF) 5.0 1.0 0 5 10 15 20 25 30 0 1 2 4 3 5 VDS, Drain-to-Source Voltage(V) Qg, Total Gate Charge(nC) Figure 9. Capacitance Figure 10. Gate Charge 6 60 I D, Drain Current(A) 100 TD(off ) Switching Time(ns) 10.0 Tr 10 TD(on) Tf 1 10 RD 10 100 it 1m 10 s ms DC 0.1 VGS=10V Single Pulse TC=25 C 0.01 1 ( L im 1 VDS=50V,ID=1A VGS=10V 0.1 S ) ON 0.1 1 10 100 Rg, Gate Resistance(Ω) V DS, Drain-Source Voltage(V) Figure 11. switching characteristics Figure 12. Maximum Safe Operating Area Oct,30,2013 4 www.samhop.com.tw STU06L01 STD06L01 Ver 1.1 V(BR)DSS tp L VDS D.U.T RG + - VDD IAS 20V tp 0.01 IAS Unclamped Inductive Waveforms Uncamped Inductive Test Circuit Figure 13b. Figure 13a. 2 1 Normalized Transient Thermal Resistance D=0.5 0.2 0.1 P DM 0.1 0.05 t1 t2 0.02 0.01 1. 2. 3. 4. S ING LE P ULS E R J J C (t)=r (t) * R J J C R J J C =S ee Datas heet T J M-T C = P DM* R J J C (t) Duty C ycle, D=t1/t2 0.01 10 -5 10 -4 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration(sec) Figure 14. Normalized Thermal Transient Impedance Curve Oct,30,2013 5 www.samhop.com.tw STU06L01 STD06L01 Ver 1.1 E TO-252 A b2 C L3 1 D1 D E1 H 1 2 3 DETAIL "A" L4 b1 e b L2 L A1 DETAIL "A" L1 SYMBOLS A A1 b b1 b2 C D D1 E E1 e H L L1 L2 L3 L4 1 MILLIMETERS MIN 2.100 0.000 0.400 0.770 4.800 0.400 5.300 4.900 6.300 4.400 2.290 8.900 1.397 2.743 0.508 0.890 0.500 0° 7° INCHES MAX 2.500 0.200 0.889 1.140 5.460 0.600 6.223 5.515 6.731 5.004 REF 10.400 1.770 REF. REF. 1.700 1.100 10° REF. MIN 0.083 0.000 0.016 0.030 0.189 0.016 0.209 0.193 0.248 0.173 0.090 0.350 0.055 0.108 0.020 0.035 0.020 0° 7° MAX 0.098 0.008 0.035 0.045 0.215 0.024 0.245 0.217 0.265 0.197 BSC 0.409 0.070 REF. REF. 0.067 0.043 10 ° REF. Oct,30,2013 6 www.samhop.com.tw STU06L01 STD06L01 Ver 1.1 PACKAGE OUTLINE DIMENSIONS TO-251 A E b3 c2 D1 E1 D H 1 2 3 b2 L5 L4 L b e SYMBOL b4 c MILLIMETERS INCHES MIN MAX MIN MAX E 6.400 6.731 0.252 0.265 L 3.980 4.280 0.157 0.169 L4 0.698 REF 0.027 REF 0.038 0.236 0.048 0.245 0.435 0.450 0.880 0.025 0.035 1.140 5.460 0.030 0.205 0.045 0.215 0.550 0.018 0.022 L5 0.972 1.226 D 6.000 11.050 6.223 11.450 0.640 0.770 5.210 0.450 H b b2 b3 b4 e A c c2 D1 E1 2.286 BSC 2.380 2.200 0.400 0.600 0.400 0.600 5.100 4.400 0.090 BSC 0.087 0.094 0.016 0.016 0.201 0.173 0.024 0.024 Oct,30,2013 7 www.samhop.com.tw STU06L01 STD06L01 Ver 1.1 TO-251 Tube/TO-252 Tape and Reel Data TO-251 Tube 0.4 5.25 4.5 1.4 2.25 " A" 1.65 5.5 2~ӿ3.0 7.50 1.25 1.90 540 + 1.5 6.60 19.75 TO-252 Carrier Tape B0 E E2 T E1 P1 P2 D1 K0 FEED DIRECTION A0 D0 P0 UNIT:р PACKAGE TO-252 (16 р* A0 6.96 ²0.1 B0 10.49 ²0.1 K0 2.79 ²0.1 D0 D1 E E1 E2 P0 P1 P2 T ӿ2 ӿ1.5 + 0.1 - 0 16.0 ²0.3 1.75 ²0.1 7.5 ²0.15 8.0 ²0.1 4.0 ²0.1 2.0 ²0.15 0.3 ²0.05 TO-252 Reel T S M N K G V R H W UNIT:р TAPE SIZE 16 р REEL SIZE ӿ 330 M ӿ330 ² 0.5 N W ӿ97 ² 1.0 17.0 + 1.5 - 0 T H 2.2 ӿ13.0 + 0.5 - 0.2 K S 10.6 2.0 ²0.5 G R V Oct,30,2013 8 www.samhop.com.tw STU06L01 STD06L01 Ver 1.1 TOP MARKING DEFINITION TO-252 SamHop Logo STU06L01 XXXXXX Product No. SMC internal code No. (A,B,C...Z) Wafer Lot No. Production Date (1,2 ~ 9, A,B.....) Production Month (1,2 ~ 9, A,B,C) Production Year (2009 = 9, 2010 = A.....) Oct,30,2013 9 www.samhop.com.tw STU06L01 STD06L01 Ver 1.1 TOP MARKING DEFINITION TO-251 SamHop Logo STD06L01 XXXXXX Product No. SMC internal code No. (A,B,C...Z) Wafer Lot No. Production Date (1,2 ~ 9, A,B.....) Production Month (1,2 ~ 9, A,B,C) Production Year (2009 = 9, 2010 = A.....) Oct,30,2013 10 www.samhop.com.tw