Green Product STU437S STD437S S a mHop Microelectronics C orp. Ver 1.0 P-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS R DS(ON) (m Ω) Max ID FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. 16 @ VGS=-10V -40V Suface Mount Package. -32A 30 @ VGS=-4.5V G G D S STU SERIES TO - 252AA( D - PAK ) S STD SERIES TO - 251 ( I - PAK ) ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID IDM EAS Drain Current-Continuous TC=25°C TC=70°C a e b -Pulsed Sigle Pulse Avalanche Energy d PD Maximum Power Dissipation TJ, TSTG Operating Junction and Storage Temperature Range Limit -40 Units ±20 -32 V A -25.6 A -94 A V 121 mJ TC=25°C 42 W TC=70°C 27 W -55 to 150 °C 3 50 °C/W THERMAL CHARACTERISTICS R JC Thermal Resistance, Junction-to-Case R JA Thermal Resistance, Junction-to-Ambient Details are subject to change without notice. °C/W Sep,09,2013 1 www.samhop.com.tw STU437S STD437S Ver 1.0 ELECTRICAL CHARACTERISTICS ( T C=25 °C unless otherwise noted ) Symbol Parameter OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) Conditions Min VGS=0V , ID=-250uA -40 Drain-Source On-State Resistance gFS Forward Transconductance Max Units V uA 1 ±100 nA -1.9 -3 V VGS=-10V , ID=-16A 13 16 VGS=-4.5V , ID=-12A VDS=-10V , ID=-16A 22 32 30 m ohm m ohm VDS=-32V , VGS=0V VGS= ±20V , VDS=0V VDS=VGS , ID=-250uA RDS(ON) Typ -1 S c DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time tf Fall Time Qg Qgs Qgd VDS=-20V,VGS=0V f=1.0MHz 244 180 pF pF pF 36 32 109 28 ns ns ns ns 2200 c VDD=-20V ID=-1.0A VGS=-10V RGEN= 6 ohm Total Gate Charge VDS=-20V,ID=-16A,VGS=-10V 37 nC Gate-Source Charge VDS=-20V,ID=-16A, VGS=-10V 4.3 nC nC VGS=0V,IS= -4A -0.8 Gate-Drain Charge 12 DRAIN-SOURCE DIODE CHARACTERISTICS VSD Diode Forward Voltage -1.3 V Notes _ 10sec. a.Surface Mounted on FR4 Board,t < _ 300us, Duty Cycle < _ 2%. b.Pulse Test:Pulse Width < c.Guaranteed by design, not subject to production testing. d.Starting TJ=25°C,L=0.5mH,VDD = 20V .(See Figure13) e.Drain current limited by maximum junction temperature. Sep,09,2013 2 www.samhop.com.tw STU437S STD437S Ver 1.0 40 30 V G S =-4V 32 -I D, Drain Current(A) -ID, Drain Current(A) V G S =-10V V G S =-4.5V 24 16 V G S =-3.5V 8 V G S =-3V 24 18 12 T j=125 C 6 25 C 0 0 0 0.5 1.5 1.0 2.5 2.0 3.0 0 -VDS, Drain-to-Source Voltage(V) 48 1.5 40 1.4 R DS(on), On-Resistance Normalized RDS(on)(m Ω) 3.2 4.8 4.0 Figure 2. Transfer Characteristics 32 V G S =-4.5V 24 16 V G S =-10V V G S =-10V I D =-16A 1.3 1.2 1.1 V G S =-4.5V I D =-12A 1.0 0 1 1 16 8 24 32 0 40 25 50 75 100 150 125 T j( C ) -I D, Drain Current(A) Tj, Junction Temperature(° C ) Figure 3. On-Resistance vs. Drain Current and Gate Voltage Figure 4. On-Resistance Variation with Drain Current and Temperature BVDSS, Normalized Drain-Source Breakdown Voltage 1.6 Vth, Normalized Gate-Source Threshold Voltage 2.4 -V GS, Gate-to-Source Voltage(V) Figure 1. Output Characteristics 8 1.6 0.8 -55 C V DS =V G S I D =-250uA 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature( ° C ) 1.15 1.10 I D =-250uA 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature(° C ) Figure 5. Gate Threshold Variation with Temperature Figure 6. Breakdown Voltage Variation with Temperature Sep,09,2013 3 www.samhop.com.tw STU437S STD437S Ver 1.0 20 60 -Is, Source-drain current(A) I D =-16A RDS(on)(m Ω) 50 40 30 125 C 20 75 C 10 0 0 2 25 C 8 6 4 10 125 C 75 C 25 C 1 10 0 -VGS, Gate-to-Source Voltage(V) 0.9 0.6 1.2 1.5 -VSD, Body Diode Forward Voltage(V) Figure 7. On-Resistance vs. Gate-Source Voltage Figure 8. Body Diode Forward Voltage Variation with Source Current 10 -V GS, Gate to Source Voltage(V) 3000 2500 C, Capacitance(pF) 0.3 C is s 2000 1500 1000 Cos s 500 C rs s 0 0 10 5 15 20 25 6 4 2 0 30 V DS = -20V I D =-16A 8 0 -VDS, Drain-to-Source Voltage(V) 5 10 15 20 25 30 35 40 Qg, Total Gate Charge(nC) Figure 9. Capacitance Figure 10. Gate Charge 1000 -ID, Drain Current(A) 100 Switching Time(ns) TD(off ) 100 TD(on) Tr Tf 10 VDS=-20V,ID=-1A VGS=-10V 1 1 10 R 10 1 0.2 0.1 100 Rg, Gate Resistance(Ω) DS ( ) ON L im it 10 1m 10 DC 0u s s ms VGS=-10V Single Pulse TC=25 C 1 10 100 -VDS, Drain-Source Voltage(V) Figure 12. Maximum Safe Operating Area Figure 11. switching characteristics Sep,09,2013 4 www.samhop.com.tw STU437S STD437S Ver 1.0 V ( BR )D S S tp L VDS D.U.T RG + - VDD IAS 20V tp 0.01 IAS Unclamped Inductive Waveforms Uncamped Inductive Test Circuit F igure 13b. Figure 13a. 2 1 Normalized Transient Thermal Resistance D=0.5 0.2 0.1 P DM 0.1 0.05 t1 t2 0.02 1. 2. 3. 4. 0.01 S ING LE P ULS E R ӰJ C (t)=r (t) * R ӰJ C R ӰJ C =S ee Datas heet T J M-T C = P DM* R ӰJ C (t) Duty C ycle, D=t1/t2 0.01 10 -5 10 -4 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration(sec) Figure 14. Normalized Thermal Transient Impedance Curve Sep,09,2013 5 www.samhop.com.tw STU437S STD437S Ver 1.0 PACKAGE OUTLINE DIMENSIONS A E E2 TO-251 C L D1 D2 E1 1 2 H B2 D 3 L2 L1 B1 D3 P SYMBOL A A1 B B1 B2 C D D1 D2 D3 H E E1 E2 L L1 L2 P A1 B MILLIMETERS MIN MAX 2.100 2.500 0.350 0.650 0.400 0.800 0.650 1.050 0.500 0.900 0.400 0.600 5.300 5.700 5.300 4.900 6.700 7.300 8.000 7.000 11.430 10.830 6.700 6.300 4.600 4.900 4.800 5.200 1.300 1.700 1.400 1.800 0.500 0.900 2.300 BSC INCHES MIN MAX 0.083 0.098 0.014 0.026 0.031 0.016 0.041 0.026 0.035 0.020 0.024 0.016 0.224 0.209 0.209 0.193 0.287 0.264 0.315 0.276 0.426 0.450 0.264 0.248 0.193 0.181 0.189 0.205 0.051 0.067 0.071 0.055 0.020 0.035 0.091 BSC Sep,09,2013 6 www.samhop.com.tw STU437S STD437S Ver 1.0 E TO-252 A b2 C L3 1 D1 D E1 H 1 2 3 DETAIL "A" L4 b1 e b L2 L A1 DETAIL "A" L1 SYMBOLS A A1 b b1 b2 C D D1 E E1 e H L L1 L2 L3 L4 1 MILLIMETERS MIN 2.100 0.000 0.400 0.770 4.800 0.400 5.300 4.900 6.300 4.400 2.290 8.900 1.397 2.743 0.508 0.890 0.500 0° 7° INCHES MAX 2.500 0.200 0.889 1.140 5.460 0.600 6.223 5.515 6.731 5.004 REF 10.400 1.770 REF. REF. 1.700 1.100 10° REF. MIN 0.083 0.000 0.016 0.030 0.189 0.016 0.209 0.193 0.248 0.173 0.090 0.350 0.055 0.108 0.020 0.035 0.020 0° 7° MAX 0.098 0.008 0.035 0.045 0.215 0.024 0.245 0.217 0.265 0.197 BSC 0.409 0.070 REF. REF. 0.067 0.043 10 ° REF. Sep,09,2013 7 www.samhop.com.tw STU437S STD437S Ver 1.0 TO-251 Tube/TO-252 Tape and Reel Data TO-251 Tube 0.4 5.25 4.5 1.4 2.25 " A" 1.65 5.5 2~ӿ3.0 7.50 1.25 1.90 540 + 1.5 6.60 19.75 TO-252 Carrier Tape B0 E E2 T E1 P1 P2 D1 K0 FEED DIRECTION A0 D0 P0 UNIT:р PACKAGE TO-252 (16 р* A0 6.96 ²0.1 B0 10.49 ²0.1 K0 2.79 ²0.1 D0 D1 E E1 E2 P0 P1 P2 T ӿ2 ӿ1.5 + 0.1 - 0 16.0 ²0.3 1.75 ²0.1 7.5 ²0.15 8.0 ²0.1 4.0 ²0.1 2.0 ²0.15 0.3 ²0.05 TO-252 Reel T S M N K G V R H W UNIT:р TAPE SIZE 16 р REEL SIZE ӿ 330 M ӿ330 ² 0.5 N W ӿ97 ² 1.0 17.0 + 1.5 - 0 T H 2.2 ӿ13.0 + 0.5 - 0.2 K S 10.6 2.0 ²0.5 G R V Sep,09,2013 8 www.samhop.com.tw STU437S STD437S Ver 1.0 TOP MARKING DEFINITION TO-252 SamHop Logo STU437S XXXXXX Product No. SMC internal code No. (A,B,C...Z) Wafer Lot No. Production Date (1,2 ~ 9, A,B.....) Production Month (1,2 ~ 9, A,B,C) Production Year (2009 = 9, 2010 = A.....) Sep,09,2013 9 www.samhop.com.tw STU437S STD437S Ver 1.0 TOP MARKING DEFINITION TO-251 SamHop Logo STD437S XXXXXX Product No. SMC internal code No. (A,B,C...Z) Wafer Lot No. Production Date (1,2 ~ 9, A,B.....) Production Month (1,2 ~ 9, A,B,C) Production Year (2009 = 9, 2010 = A.....) Sep,09,2013 10 www.samhop.com.tw