Green Product STU45N01 STD45N01 S a mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low R DS(ON). PRODUCT SUMMARY V DSS ID R DS(ON) (m Ω) Typ 100V 40A 18 @ VGS=10V Rugged and reliable. TO-252 and TO-251 Package. G D G S STU SERIES TO - 252AA( D - PAK ) S STD SERIES TO - 251 ( I - PAK ) ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol Parameter Limit Units VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 40 A 33.5 A IDM EAS -Pulsed TC=25°C TC=70°C a e b d 117 A 306 mJ TC=25°C 60 W TC=70°C 42 W -55 to 175 °C Thermal Resistance, Junction-to-Case 2.5 °C/W Thermal Resistance, Junction-to-Ambient 50 °C/W Single Pulse Avalanche Energy PD Maximum Power Dissipation TJ, TSTG Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JC R JA Details are subject to change without notice. Aug,05,2013 1 www.samhop.com.tw STU45N01 STD45N01 Ver 1.0 ELECTRICAL CHARACTERISTICS ( T C=25 °C unless otherwise noted ) Symbol Parameter OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage Conditions Min VGS=0V , ID=250uA 100 IDSS Zero Gate Voltage Drain Current VDS=80V , VGS=0V IGSS Gate-Body Leakage Current VGS= ±20V , VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS VDS=VGS , ID=250uA 1 Typ Max Units 1 V uA ±100 nA 2 3 V Drain-Source On-State Resistance VGS=10V , ID=20A 18 23 m ohm Forward Transconductance VDS=10V , ID=20A 17 S 2560 pF pF pF c DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time tf Qg Fall Time Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS=25V,VGS=0V f=1.0MHz 247 180 c ns ns VDD=50V ID=1A VGS=10V RGEN= 6 ohm 54 40 ns VDS=50V,ID=20A,VGS=10V 32 nC 4 nC 16 nC VDS=50V,ID=20A, VGS=10V DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS VSD Diode Forward Voltage VGS=0V,IS=6A 73 78 0.78 ns 1.3 V Notes _ 10sec. a.Surface Mounted on FR4 Board,t < _ 300us, Duty Cycle < _ 2%. b.Pulse Test:Pulse Width < c.Guaranteed by design, not subject to production testing. d.Starting TJ=25°C,L=0.5mH,VDD = 50V.(See Figure13) e.Drain current limited by maximum junction temperature. Aug,05,2013 2 www.samhop.com.tw STU45N01 STD45N01 Ver 1.0 30 100 80 ID, Drain Current(A) ID, Drain Current(A) VGS=10V VGS=8V 60 VGS=7V 40 VGS=6V 20 24 18 12 Tj=125 C -55 C 6 25 C VGS=5V 0 0 1.5 1 0.5 2 2.5 3 0 2.4 3.6 4.8 7.2 6.0 V GS, Gate-to-Source Voltage(V) Figure 1. Output Characteristics Figure 2. Transfer Characteristics 60 2.0 50 1.8 40 30 V G S =10V 20 10 V G S =10V I D =20A 1.6 1.4 1.2 1.0 0 1 1 20 40 60 80 0 100 I D, Drain Current(A) BVDSS, Normalized Drain-Source Breakdown Voltage V DS =V G S I D =250uA 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 50 75 100 125 150 T j ( °C ) Figure 4. On-Resistance Variation with Drain Current and Temperature 1.6 1.4 25 Tj, Junction Temperature(° C ) Figure 3. On-Resistance vs. Drain Current and Gate Voltage Vth, Normalized Gate-Source Threshold Voltage 1.2 VDS, Drain-to-Source Voltage(V) R DS(on), On-Resistance Normalized RDS(on)(m Ω) 0 75 100 125 150 Tj, Junction Temperature( ° C ) 1.15 I D =250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature(° C ) Figure 5. Gate Threshold Variation with Temperature Figure 6. Breakdown Voltage Variation with Temperature Aug,05,2013 3 www.samhop.com.tw STU45N01 STD45N01 Ver 1.0 20 90 Is, Source-drain current(A) I D =20A 75 RDS(on)(m Ω) 60 125 C 45 30 75 C 15 0 25 C 0 2 6 4 8 125 C 10 25 C 75 C 1 10 C, Capacitance(pF) V GS, Gate to Source Voltage(V) 3600 Ciss 2400 1800 Coss 1200 600 Crss 15 10 20 25 1.00 1.25 10 VDS=50V ID=20A 8 6 4 2 0 0 5 0.75 Figure 8. Body Diode Forward Voltage Variation with Source Current Figure 7. On-Resistance vs. Gate-Source Voltage 0 0.50 VSD, Body Diode Forward Voltage(V) VGS, Gate-to-Source Voltage(V) 3000 0.25 0 30 0 5 10 15 20 25 30 35 VDS, Drain-to-Source Voltage(V) Qg, Total Gate Charge(nC) Figure 9. Capacitance Figure 10. Gate Charge 40 I D, Drain Current(A) TD(off ) Tr 100 TD(on) Tf R 10 100 L im it 10 1m 10 0.3 0.1 10 D S( ) ON 10 1 VDS=50V,ID=1A VGS=10V 1 100 m DC Switching Time(ns) 1000 10 0u us s s s VGS=10V Single Pulse TC=25 C 1 10 100 Rg, Gate Resistance(Ω) V DS, Drain-Source Voltage(V) Figure 11. switching characteristics Figure 12. Maximum Safe Operating Area Aug,05,2013 4 www.samhop.com.tw STU45N01 STD45N01 Ver 1.0 V ( BR )D S S tp L V DS D .U .T RG + - IA S VDD 20V tp 0.0 1 IAS Unclamped Inductive Test Circuit Unclamped Inductive Waveforms Figure 13a. Figure 13b. 2 1 Normalized Transient Thermal Resistance D=0.5 0.2 0.1 P DM 0.1 0.05 t1 t2 0.02 0.01 1. 2. 3. 4. S ING LE P ULS E R J J A (t)=r (t) * R J J A R J J A =S ee Datas heet T J M-T A = P DM* R J J A (t) Duty C ycle, D=t1/t2 0.01 10 -5 10 -4 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration(sec) Figure 14. Normalized Thermal Transient Impedance Curve Aug,05,2013 5 www.samhop.com.tw STU45N01 STD45N01 Ver 1.0 E TO-252 A b2 C L3 1 D1 D E1 H 1 2 3 DETAIL "A" L4 b1 e b L2 L A1 DETAIL "A" L1 SYMBOLS A A1 b b1 b2 C D D1 E E1 e H L L1 L2 L3 L4 1 MILLIMETERS MIN 2.100 0.000 0.400 0.770 4.800 0.400 5.300 4.900 6.300 4.400 2.290 8.900 1.397 2.743 0.508 0.890 0.500 0° 7° INCHES MAX 2.500 0.200 0.889 1.140 5.460 0.600 6.223 5.515 6.731 5.004 REF 10.400 1.770 REF. REF. 1.700 1.100 10° REF. MIN 0.083 0.000 0.016 0.030 0.189 0.016 0.209 0.193 0.248 0.173 0.090 0.350 0.055 0.108 0.020 0.035 0.020 0° 7° MAX 0.098 0.008 0.035 0.045 0.215 0.024 0.245 0.217 0.265 0.197 BSC 0.409 0.070 REF. REF. 0.067 0.043 10 ° REF. Aug,05,2013 6 www.samhop.com.tw STU45N01 STD45N01 Ver 1.0 PACKAGE OUTLINE DIMENSIONS TO-251 A E b3 c2 D1 E1 D H 1 2 3 b2 L5 L4 L b e SYMBOL b4 c MILLIMETERS INCHES MIN MAX MIN MAX E 6.400 6.731 0.252 0.265 L 3.980 4.280 0.157 0.169 L4 0.698 REF 0.027 REF 0.038 0.236 0.048 0.245 0.435 0.450 0.880 0.025 0.035 1.140 5.460 0.030 0.205 0.045 0.215 0.550 0.018 0.022 L5 0.972 1.226 D 6.000 11.050 6.223 11.450 0.640 0.770 5.210 0.450 H b b2 b3 b4 e A c c2 D1 E1 2.286 BSC 2.380 2.200 0.400 0.600 0.400 0.600 5.100 4.400 0.090 BSC 0.087 0.094 0.016 0.016 0.201 0.173 0.024 0.024 Aug,05,2013 7 www.samhop.com.tw STU45N01 STD45N01 Ver 1.0 TO-251 Tube/TO-252 Tape and Reel Data TO-251 Tube 0.4 5.25 4.5 1.4 2.25 " A" 1.65 5.5 2~ӿ3.0 7.50 1.25 1.90 540 + 1.5 6.60 19.75 TO-252 Carrier Tape B0 E E2 T E1 P1 P2 D1 K0 FEED DIRECTION A0 D0 P0 UNIT:р PACKAGE TO-252 (16 р* A0 6.96 ²0.1 B0 10.49 ²0.1 K0 2.79 ²0.1 D0 D1 E E1 E2 P0 P1 P2 T ӿ2 ӿ1.5 + 0.1 - 0 16.0 ²0.3 1.75 ²0.1 7.5 ²0.15 8.0 ²0.1 4.0 ²0.1 2.0 ²0.15 0.3 ²0.05 TO-252 Reel T S M N K G V R H W UNIT:р TAPE SIZE 16 р REEL SIZE ӿ 330 M ӿ330 ² 0.5 N W ӿ97 ² 1.0 17.0 + 1.5 - 0 T H 2.2 ӿ13.0 + 0.5 - 0.2 K S 10.6 2.0 ²0.5 G R V Aug,05,2013 8 www.samhop.com.tw STU45N01 STD45N01 Ver 1.0 TOP MARKING DEFINITION TO-252 SamHop Logo STU45N01 XXXXXX Product No. SMC internal code No. (A,B,C...Z) Wafer Lot No. Production Date (1,2 ~ 9, A,B.....) Production Month (1,2 ~ 9, A,B,C) Production Year (2009 = 9, 2010 = A.....) Aug,05,2013 9 www.samhop.com.tw STU45N01 STD45N01 Ver 1.0 TOP MARKING DEFINITION TO-251 SamHop Logo STD45N01 XXXXXX Product No. SMC internal code No. (A,B,C...Z) Wafer Lot No. Production Date (1,2 ~ 9, A,B.....) Production Month (1,2 ~ 9, A,B,C) Production Year (2009 = 9, 2010 = A.....) Aug,05,2013 10 www.samhop.com.tw