Green Product STU/D456A S a mHop Microelectronics C orp. Ver 1.1 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low R DS(ON). PRODUCT SUMMARY V DSS R DS(ON) (m Ω) Max ID Rugged and reliable. 23 @ VGS=10V 40V TO-252 and TO-251 Package. 30A 36 @ VGS=4.5V G D G S S STD SERIES TO-251S(I-PAK) STU SERIES TO-252AA(D-PAK) ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol Parameter VDS VGS ID IDM Limit Units Drain-Source Voltage 40 V Gate-Source Voltage ±20 V 30 A 24 A 88 A 30 mJ TC=25°C 42 W TC=70°C 27 W -55 to 150 °C 3 °C/W 50 °C/W Drain Current-Continuous -Pulsed TC=25°C TC=70°C a b EAS Single Pulse Avalanche Energy PD Maximum Power Dissipation TJ, TSTG Operating Junction and Storage Temperature Range a d THERMAL CHARACTERISTICS R JC R JA Thermal Resistance, Junction-to-Case a Thermal Resistance, Junction-to-Ambient a Details are subject to change without notice. Nov,17,2014 1 www.samhop.com.tw STU/D456A Ver 1.1 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA IDSS Zero Gate Voltage Drain Current VDS=32V , VGS=0V IGSS Gate-Body Leakage Current VGS= ±20V , VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) Drain-Source On-State Resistance gFS Forward Transconductance Min Typ Max 40 Units V 1 uA ±100 nA 18.5 3 23 V m ohm VGS=4.5V , ID=12A 26.5 36 m ohm VDS=10V , ID=15A 32 S VDS=20V,VGS=0V f=1.0MHz 540 87 70 pF pF pF 12 12.5 ns ns 18.5 ns 17 ns VDS=20V,ID=15A,VGS=10V 11.5 nC VDS=20V,ID=15A,VGS=4.5V 6 nC 1.5 nC 3.8 nC VDS=VGS , ID=250uA VGS=10V , ID=15A 1 1.9 c DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge c VDD=20V ID=1A VGS=10V RGEN= 6 ohm VDS=20V,ID=15A, VGS=10V DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS VSD Diode Forward Voltage VGS=0V,IS=2A 0.785 1.3 V Notes _ 10sec. a.Surface Mounted on FR4 Board,t < _ 2%. _ 300us, Duty Cycle < b.Pulse Test:Pulse Width < c.Guaranteed by design, not subject to production testing. d.Starting TJ=25°C,L=0.5mH,VDD = 20V.(See Figure13) Nov,17,2014 2 www.samhop.com.tw STU/D456A Ver 1.1 30 30 VGS=4.5V I D, Drain Current(A) ID, Drain Current(A) VGS=4V 24 VGS=10V 18 VGS=3.5V 12 6 24 18 Tj=125 C 12 -55 C 25 C 6 VGS=3V 0 0 2.0 1.5 1.0 0.5 2.5 0 3.0 2.4 3.2 4.8 4.0 Figure 1. Output Characteristics Figure 2. Transfer Characteristics 2.0 50 1.8 40 V G S =4.5V 30 20 V G S =10V V G S =10V I D =15A 1.6 1.4 1.2 V G S =4.5V I D =12A 1.0 10 6 1 12 18 24 0 30 0 I D, Drain Current(A) BVDSS, Normalized Drain-Source Breakdown Voltage V DS =V G S I D =250uA 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 50 75 100 125 150 T j ( °C ) Figure 4. On-Resistance Variation with Drain Current and Temperature 1.6 1.4 25 Tj, Junction Temperature(° C ) Figure 3. On-Resistance vs. Drain Current and Gate Voltage Vth, Normalized Gate-Source Threshold Voltage 1.6 V GS, Gate-to-Source Voltage(V) 60 1 0.8 VDS, Drain-to-Source Voltage(V) R DS(on), On-Resistance Normalized RDS(on)(m Ω) 0 75 100 125 150 Tj, Junction Temperature(° C ) 1.15 I D =250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature(° C ) Figure 5. Gate Threshold Variation with Temperature Figure 6. Breakdown Voltage Variation with Temperature Nov,17,2014 3 www.samhop.com.tw STU/D456A Ver 1.1 60 90 Is, Source-drain current(A) I D =15A 75 45 125 C 30 15 0 75 C 0 2 25 C 4 6 8 75 C 1 0 0.3 0.6 0.9 1.2 1.5 V GS, Gate-to-Source Voltage(V) VSD, Body Diode Forward Voltage(V) Figure 7. On-Resistance vs. Gate-Source Voltage Figure 8. Body Diode Forward Voltage Variation with Source Current 600 Ciss 500 C, Capacitance(pF) 25 C 125 C 10 10 V GS, Gate to Source Voltage(V) RDS(on)(m Ω) 60 400 300 200 Coss Crss 100 10 VDS=20V ID=15A 8 6 4 2 0 0 0 5 10 15 20 25 30 0 2 4 8 6 10 14 16 12 V DS, Drain-to-Source Voltage(V) Qg, Total Gate Charge(nC) Figure 9. Capacitance Figure 10. Gate Charge 300 100 TD(off ) I D, Drain Current(A) Switching Time(ns) 100 Tf Tr TD(on) 10 0.3 0.1 1 10 100 L im it 10 1m 10 m DC s 10 1 VDS=20V,ID=1A VGS=10V 1 R ( DS ) ON 0u s s VGS=10V Single Pulse TA=25 C 1 10 40 Rg, Gate Resistance(Ω) V DS, Drain-Source Voltage(V) Figure 11. switching characteristics Figure 12. Maximum Safe Operating Area Nov,17,2014 4 www.samhop.com.tw STU/D456A Ver 1.1 V ( BR )D S S tp L VDS D .U .T RG + - VD D IA S A 20V tp 0.0 1 IAS Unclamped Inductive Test Circuit Unclamped Inductive Waveforms Figure 13b. Figure 13a. 2 1 Normalized Transient Thermal Resistance D=0.5 0.2 0.1 P DM 0.1 0.05 t1 t2 0.02 0.01 1. 2. 3. 4. S ING LE P ULS E R J J A (t)=r (t) * R J J A R J J A =S ee Datas heet T J M-T A = P DM* R J J A (t) Duty C ycle, D=t1/t2 0.01 10 -5 10 -4 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration(sec) Figure 14. Normalized Thermal Transient Impedance Curve Nov,17,2014 5 www.samhop.com.tw STU/D456A Ver 1.1 PACKAGE OUTLINE DIMENSIONS TO-252 E E1 b3 L3 D1 D H 3 2 1 L4 b b2 e A SYMBOLS c2 A A1 b b2 b3 c c2 D D1 e E E1 H L L1 L2 L3 L4 DETAIL "A" c L2 L L1 A1 MILLIMETERS MIN MAX 2.380 2.200 0.000 0.127 0.635 0.889 0.762 1.143 5.200 5.460 0.450 0.600 0.450 0.580 6.000 6.223 5.380 5.210 2.286 BSC 6.400 6.731 4.318 4.900 9.400 10.400 1.400 1.770 2.743 REF 0.508 BSC 1.270 0.890 0.640 1.010 10 ° 0° DETAIL "A" Nov,17,2014 6 www.samhop.com.tw STU/D456A Ver 1.1 TO-251 A E b3 c2 D1 E1 D H 1 2 3 b2 L4 L5 L b e b4 SYMBOL c MILLIMETERS MIN MAX E 6.350 6.731 L 3.700 4.400 L4 0.698 REF L5 0.972 1.226 D 5.970 9.670 6.223 11.450 0.630 0.850 1.140 b3 0.760 4.950 5.460 b4 0.450 0.550 e 2.286 BSC 2.390 2.180 0.400 0.610 0.400 0.610 H b b2 A c c2 D1 E1 5.100 4.318 Nov,17,2014 7 www.samhop.com.tw STU/D456A Ver 1.1 TO-251 Tube/TO-252 Tape and Reel Data TO-251 Tube 0.4 5.25 4.5 1.4 2.25 " A" 1.65 5.5 2~ӿ3.0 7.50 1.25 1.90 540 + 1.5 6.60 19.75 TO-252 Carrier Tape B0 E E2 T E1 P1 P2 D1 K0 FEED DIRECTION A0 D0 P0 UNIT:р PACKAGE TO-252 (16 р* A0 6.96 ²0.1 B0 10.49 ²0.1 K0 2.79 ²0.1 D0 D1 E E1 E2 P0 P1 P2 T ӿ2 ӿ1.5 + 0.1 - 0 16.0 ²0.3 1.75 ²0.1 7.5 ²0.15 8.0 ²0.1 4.0 ²0.1 2.0 ²0.15 0.3 ²0.05 TO-252 Reel T S M N K G V R H W UNIT:р TAPE SIZE 16 р REEL SIZE ӿ 330 M ӿ330 ² 0.5 N ӿ97 ² 1.0 W 17.0 + 1.5 - 0 T H K S 2.2 ӿ13.0 + 0.5 - 0.2 10.6 2.0 ²0.5 G R V Nov,17,2014 8 www.samhop.com.tw SDU/D456A Ver 1.1 TOP MARKING DEFINITION TO-252 SamHop Logo STU456A XXXXXX Product No. SMC internal code No. (A,B,C...Z) Wafer Lot No. Production Date (1,2 ~ 9, A,B.....) Production Month (1,2 ~ 9, A,B,C) Production Year (2009 = 9, 2010 = A.....) Nov,17,2014 9 www.samhop.com.tw STU/D456A Ver 1.1 TOP MARKING DEFINITION TO-251 SamHop Logo STD456A XXXXXX Product No. SMC internal code No. (A,B,C...Z) Wafer Lot No. Production Date (1,2 ~ 9, A,B.....) Production Month (1,2 ~ 9, A,B,C) Production Year (2009 = 9, 2010 = A.....) Nov,17,2014 10 www.samhop.com.tw