STU/D660

Green
Product
STU/D660
SamHop Microelectronics Corp.
Ver 2.1
N-Channel Logic Level Enhancement Mode Field Effect Transistor
FEATURES
Super high dense cell design for low RDS(ON).
PRODUCT SUMMARY
VDSS
80V
RDS(ON) (mΩ) Max
ID
Rugged and reliable.
620
@VGS=10V
TO-252 and TO-251 Package.
800
@VGS=4.5V
ESD Protected.
3A
D
G
G
D
S
STU SERIES
TO-252AA(D-PAK)
G
S
STD SERIES
TO-251(I-PAK)
S
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol
Parameter
VDS
VGS
ID
IDM
Limit
Units
Drain-Source Voltage
80
V
Gate-Source Voltage
±20
V
3
A
2.4
A
8.8
A
4
mJ
TC=25°C
42
W
TC=70°C
27
W
-55 to 150
°C
Thermal Resistance, Junction-to-Case
3
°C/W
Thermal Resistance, Junction-to-Ambient
50
°C/W
Drain Current-Continuous
-Pulsed
c
ac
EAS
Single Pulse Avalanche Energy
PD
Maximum Power Dissipation
TJ, TSTG
TC=25°C
TC=70°C
d
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JC
R JA
Details are subject to change without notice.
Jan,08,2015
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STU/D660
Ver 2.1
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
Symbol
Parameter
Conditions
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
IDSS
Zero Gate Voltage Drain Current
VDS=64V , VGS=0V
IGSS
Gate-Body Leakage Current
VGS= ±20V , VDS=0V
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
VDS=VGS , ID=250uA
RDS(ON)
Drain-Source On-State Resistance
gFS
Forward Transconductance
Min
Typ
Max
80
1
Units
V
1
uA
±10
uA
1.9
3
V
VGS=10V , ID=1.5A
550
620
m ohm
VGS=4.5V , ID=1.3A
630
800
m ohm
VDS=10V , ID=1.5A
3
S
VDS=25V,VGS=0V
f=1.0MHz
137
19
12
pF
pF
pF
14
13.5
ns
ns
121
ns
32
ns
b
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
tD(ON)
Turn-On Delay Time
tr
Rise Time
tD(OFF)
Turn-Off Delay Time
b
VDD=40V
ID=1A
VGS=10V
RGEN= 6 ohm
tf
Qg
Fall Time
Total Gate Charge
VDS=40V,ID=1.5A,VGS=10V
2.73
nC
Qgs
Gate-Source Charge
0.68
nC
Qgd
Gate-Drain Charge
VDS=40V,ID=1.5A,
VGS=10V
1.05
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Diode Forward Voltage
VSD
VGS=0V,IS=0.5A
0.83
1.3
V
Notes
_ 1%.
_ 10us, Duty Cycle <
a.Pulse Test:Pulse Width <
b.Guaranteed by design, not subject to production testing.
c.Drain current limited by maximum junction temperature.
d.Starting TJ=25°C,L=0.5mH,VDD = 40V.(See Figure13)
e.Mounted on FR4 Board of 1 inch2 , 2oz.
Jan,08,2015
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STU/D660
Ver 2.1
3.5
3.5
VGS=5V
ID, Drain Current(A)
ID, Drain Current(A)
VGS=10V
2.8
VGS=4.5V
2.1
VGS=4V
1.4
VGS=3.5V
0.7
2.8
Tj=125 C
2.1
1.4
-55 C
25 C
0.7
VGS=3V
0
0
3
2
1
4
0
6
5
2.7
3.6
4.5
5.4
VGS, Gate-to-Source Voltage(V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
1800
2.2
1500
2.0
1200
900
VGS=4.5V
600
VGS=10V
300
VGS=10V
ID=1.5A
1.8
1.6
1.4
1.2
VGS=4.5V
ID=1.3A
1.0
0
0
0.7
1
1.4
2.1
2.8
3.5
0
ID, Drain Current(A)
BVDSS, Normalized
Drain-Source Breakdown Voltage
VDS=VGS
ID=250uA
1.1
1.0
0.9
0.8
0.7
0.6
-50
-25
0
25
50
75
50
75
100
125
150
Tj(°C )
Figure 4. On-Resistance Variation with Drain
Current and Temperature
1.3
1.2
25
Tj, Junction Temperature(°C )
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
Vth, Normalized
Gate-Source Threshold Voltage
1.8
0.9
VDS, Drain-to-Source Voltage(V)
RDS(on), On-Resistance
Normalized
RDS(on)(mΩ)
0
100 125 150
Tj, Junction Temperature(°C )
1.15
ID=250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50
-25
0
25
50
75
100 125 150
Tj, Junction Temperature(°C )
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Breakdown Voltage Variation
with Temperature
Jan,08,2015
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STU/D660
Ver 2.1
5
1800
Is, Source-drain current(A)
ID=1.5A
RDS(on)(m Ω )
1500
1200
125 C
900
75 C
600
25 C
300
125 C
75 C
1
0
4
2
0
6
8
0
10
VGS, Gate to Source Voltage(V)
180
150
Ciss
120
90
60
Coss
Crss
0
0
5
10
15
20
25
0.6
0.9
1.2
1.5
Figure 8. Body Diode Forward Voltage
Variation with Source Current
Figure 7. On-Resistance vs.
Gate-Source Voltage
30
0.3
VSD, Body Diode Forward Voltage(V)
VGS, Gate-to-Source Voltage(V)
C, Capacitance(pF)
25 C
10
VDS=40V
ID=1.5A
8
6
4
2
0
30
0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
VDS, Drain-to-Source Voltage(V)
Qg, Total Gate Charge(nC)
Figure 9. Capacitance
Figure 10. Gate Charge
3.2
300
10
Switching Time(ns)
ID, Drain Current(A)
TD(off )
100
Tf
Tr
TD(on)
10
RD
1
0.1
O
S(
L
N)
im
it
1m
10
m
DC s
s
VGS=10V
Single Pulse
TC=25 C
VDS=40V,ID=1A
VGS=10V
1
1
10
100
0.1
1
10
100
Rg, Gate Resistance( Ω )
VDS, Drain-Source Voltage(V)
Figure 11. switching characteristics
Figure 12. Maximum Safe Operating Area
Jan,08,2015
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STU/D660
Ver 2.1
V(BR)DSS
tp
L
VDS
D.U.T
RG
+
- VDD
IAS
20V
tp
0.01
IAS
Unclamped Inductive Waveforms
Uncamped Inductive Test Circuit
Figure 13b.
Figure 13a.
2
1
Normalized Transient
Thermal Resistance
D=0.5
0.2
0.1
P DM
0.1
0.05
t1
t2
0.02
0.01
1. R JA(t)=r(t)* R JA
2. R JA=See Datasheet
3. TJM-TA=PDM*R JA(t)
4. Duty Cycle,D=t1/t2
SINGLE PULSE
0.01
10
-5
10
-4
10
-3
10
-2
10
-1
10
1
Square Wave Pulse Duration(sec)
Figure 14. Normalized Thermal Transient Impedance Curve
Jan,08,2015
5
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STU/D660
Ver 2.1
TO-252
E
E1
b3
L3
D1
D
H
3
2
1
L4
b
b2
e
A
SYMBOLS
c2
A
A1
b
b2
b3
c
c2
D
D1
e
E
E1
H
L
L1
L2
L3
L4
DETAIL "A"
c
L2
L
L1
A1
MILLIMETERS
MIN
MAX
2.380
2.200
0.000
0.127
0.635
0.889
0.762
1.143
5.200
5.460
0.450
0.600
0.450
0.580
6.000
6.223
5.380
5.210
2.286 BSC
6.400
6.731
4.318
4.900
9.400
10.400
1.400
1.770
2.743 REF
0.508 BSC
1.270
0.890
0.640
1.010
10 °
0°
DETAIL "A"
Jan,08,2015
6
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STU/D660
Ver 2.1
PACKAGE OUTLINE DIMENSIONS
TO-251
A
E
b3
c2
D1
E1
D
H
1
2
3
b2
L4
L5
L
b
e
b4
SYMBOL
c
MILLIMETERS
MIN
MAX
E
6.350
6.731
L
3.700
4.400
L4
0.698 REF
L5
0.972
1.226
D
5.970
9.670
6.223
11.450
0.630
0.850
1.140
b3
0.760
4.950
5.460
b4
0.450
0.550
e
2.286 BSC
2.390
2.180
0.400
0.610
0.400
0.610
H
b
b2
A
c
c2
D1
E1
5.100
4.318
Jan,08,2015
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STU/D660
Ver 2.1
TO-251 Tube/TO-252 Tape and Reel Data
TO-251 Tube
0.4
5.25
4.5
1.4
2.25
" A"
1.65
5.5
2~ӿ3.0
7.50
1.25
1.90
540 + 1.5
6.60
19.75
TO-252 Carrier Tape
B0
E
E2
T
E1
P1
P2
D1
K0
FEED DIRECTION
A0
D0
P0
UNIT:р
PACKAGE
TO-252
(16 р*
A0
6.96
²0.1
B0
10.49
²0.1
K0
2.79
²0.1
D0
D1
E
E1
E2
P0
P1
P2
T
ӿ2
ӿ1.5
+ 0.1
- 0
16.0
²0.3
1.75
²0.1
7.5
²0.15
8.0
²0.1
4.0
²0.1
2.0
²0.15
0.3
²0.05
TO-252 Reel
T
S
M
N
K
G
V
R
H
W
UNIT:р
TAPE SIZE
16 р
REEL SIZE
ӿ 330
M
ӿ330
² 0.5
N
ӿ97
² 1.0
W
17.0
+ 1.5
- 0
T
H
K
S
2.2
ӿ13.0
+ 0.5
- 0.2
10.6
2.0
²0.5
G
R
V
Jan,08,2015
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STU/D660
Ver 2.1
TOP MARKING DEFINITION
TO-252
SamHop Logo
STU660
XXXXXX
Product No.
SMC internal code No. (A,B,C...Z)
Wafer Lot No.
Production Date (1,2 ~ 9, A,B.....)
Production Month (1,2 ~ 9, A,B,C)
Production Year (2009 = 9, 2010 = A.....)
Jan,08,2015
9
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STU/D660
Ver 2.1
TOP MARKING DEFINITION
TO-251
SamHop Logo
STD600
XXXXXX
Product No.
SMC internal code No. (A,B,C...Z)
Wafer Lot No.
Production Date (1,2 ~ 9, A,B.....)
Production Month (1,2 ~ 9, A,B,C)
Production Year (2009 = 9, 2010 = A.....)
Jan,08,2015
10
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