Green Product STU30N01 STD30N01 S a mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low R DS(ON). PRODUCT SUMMARY V DSS ID R DS(ON) (m Ω) Typ 100V 30A 30 @ VGS=10V Rugged and reliable. TO-252 and TO-251 Package. G D G S STU SERIES TO - 252AA( D - PAK ) S STD SERIES TO - 251 ( I - PAK ) ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol Parameter Limit Units VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 30 A 25 A IDM c TC=25°C TC=70°C ac 88 A TC=25°C 68 W TC=70°C 48 W -55 to 175 °C Thermal Resistance, Junction-to-Case 2.2 °C/W Thermal Resistance, Junction-to-Ambient 50 °C/W -Pulsed PD Maximum Power Dissipation TJ, TSTG Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JC R JA Details are subject to change without notice. Aug,26,2014 1 www.samhop.com.tw STU30N01 STD30N01 Ver 1.0 ELECTRICAL CHARACTERISTICS ( T C=25 °C unless otherwise noted ) Symbol Parameter OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage Conditions Min VGS=0V , ID=250uA 100 IDSS Zero Gate Voltage Drain Current VDS=80V , VGS=0V IGSS Gate-Body Leakage Current VGS= ±20V , VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS VDS=VGS , ID=250uA 2 Typ Max Units 1 V uA ±100 nA 2.8 4 V Drain-Source On-State Resistance VGS=10V , ID=15A 30 36 m ohm Forward Transconductance VDS=10V , ID=15A 23 S VDS=25V,VGS=0V f=1.0MHz 1235 136 76 pF pF pF 32 32 ns ns 37 ns 12.4 ns 14.5 nC 3 nC 6 nC b DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time tf Qg Fall Time Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge b VDD=50V ID=1A VGS=10V RGEN= 6 ohm VDS=50V,ID=15A,VGS=10V VDS=50V,ID=15A, VGS=10V DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS VSD Diode Forward Voltage VGS=0V,IS=5A 0.78 1.3 V Notes _ 1%. _ 10us, Duty Cycle < a.Pulse Test:Pulse Width < b.Guaranteed by design, not subject to production testing. c.Drain current limited by maximum junction temperature. d.Mounted on FR4 Board of 1 inch2 , 2oz. Aug,26,2014 2 www.samhop.com.tw STU30N01 STD30N01 Ver 1.0 25 60 36 VGS=6V 24 VGS=5V 12 0 RDS(on)(m Ω) ID, Drain Current(A) VGS=7V 0 2.0 1.5 1.0 0.5 2.5 20 15 Tj=125 C 10 25 C 0 1.0 2.0 3.0 4.0 6.0 5.0 VDS, Drain-to-Source Voltage(V) V GS, Gate-to-Source Voltage(V) Figure 1. Output Characteristics Figure 2. Transfer Characteristics 120 2.5 100 2.2 80 60 V G S =10V 40 20 V G S =10V I D =15A 1.9 1.6 1.3 1.0 0.7 1 1 12 24 36 48 0 60 I D, Drain Current(A) BVDSS, Normalized Drain-Source Breakdown Voltage V DS =V G S I D =250uA 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 50 75 100 125 150 T j ( °C ) Figure 4. On-Resistance Variation with Drain Current and Temperature 1.6 1.4 25 Tj, Junction Temperature(° C ) Figure 3. On-Resistance vs. Drain Current and Gate Voltage Vth, Normalized Gate-Source Threshold Voltage -55 C 5 0 3.0 R DS(on), On-Resistance Normalized ID, Drain Current(A) VGS=10V 48 75 100 125 150 Tj, Junction Temperature( ° C ) 1.15 I D =250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature(° C ) Figure 5. Gate Threshold Variation with Temperature Figure 6. Breakdown Voltage Variation with Temperature Aug,26,2014 3 www.samhop.com.tw STU30N01 STD30N01 Ver 1.0 20 120 Is, Source-drain current(A) I D =15A RDS(on)(m Ω) 100 80 125 C 60 75 C 40 25 C 20 0 2 0 4 8 6 0.25 0.50 0.75 1.00 1.25 VGS, Gate-to-Source Voltage(V) VSD, Body Diode Forward Voltage(V) Figure 7. On-Resistance vs. Gate-Source Voltage Figure 8. Body Diode Forward Voltage Variation with Source Current V GS, Gate to Source Voltage(V) C, Capacitance(pF) 75 C 0 1500 Ciss 1200 900 600 Coss 300 Crss 0 25 C 125 C 1 10 1800 0 10 5 10 15 20 25 10 VDS=50V ID=15A 8 6 4 2 0 30 0 2 4 6 8 10 14 12 VDS, Drain-to-Source Voltage(V) Qg, Total Gate Charge(nC) Figure 9. Capacitance Figure 10. Gate Charge 16 300 100 it L im N) (O 0.3 0.1 1 1 S 1 VDS=50V,ID=1A VGS=10V 10 100 s DC 10 10 RD Tf 0u s ms I D, Drain Current(A) TD(on) 10 1m 10 Switching Time(ns) Tr us TD(off ) 10 100 VGS=10V Single Pulse TA=25 C 1 10 100 Rg, Gate Resistance(Ω) V DS, Drain-Source Voltage(V) Figure 11. switching characteristics Figure 12. Maximum Safe Operating Area Aug,26,2014 4 www.samhop.com.tw STU30N01 STD30N01 Ver 1.0 2 1 Normalized Transient Thermal Resistance D=0.5 0.2 0.1 P DM 0.1 0.05 t1 t2 0.02 0.01 1. 2. 3. 4. S ING LE P ULS E R J J A (t)=r (t) * R J J A R J J A =S ee Datas heet T J M-T A = P DM* R J J A (t) Duty C ycle, D=t1/t2 0.01 10 -5 10 -4 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration(sec) Figure 13. Normalized Thermal Transient Impedance Curve Aug,26,2014 5 www.samhop.com.tw STU30N01 STD30N01 Ver 1.0 TO-252 E E1 b3 L3 D1 D H 3 2 1 L4 b b2 e A SYMBOLS c2 A A1 b b2 b3 c c2 D D1 e E E1 H L L1 L2 L3 L4 DETAIL "A" c L2 L L1 A1 MILLIMETERS MIN MAX 2.380 2.200 0.000 0.127 0.635 0.889 0.762 1.143 5.200 5.460 0.450 0.600 0.450 0.580 6.000 6.223 5.380 5.210 2.286 BSC 6.400 6.731 4.318 4.900 9.400 10.400 1.400 1.770 2.743 REF 0.508 BSC 1.270 0.890 0.640 1.010 10 ° 0° DETAIL "A" Aug,26,2014 6 www.samhop.com.tw STU30N01 STD30N01 Ver 1.0 PACKAGE OUTLINE DIMENSIONS TO-251 A E b3 c2 D1 E1 D H 1 2 3 b2 L4 L5 L b e b4 SYMBOL c MILLIMETERS MIN MAX E 6.350 6.731 L 3.700 4.400 L4 0.698 REF L5 0.972 1.226 D 5.970 9.670 6.223 11.450 0.630 0.850 0.760 4.950 1.140 0.450 0.550 H b b2 b3 b4 e A c c2 D1 E1 5.460 2.286 BSC 2.390 2.180 0.400 0.610 0.400 0.610 5.100 4.318 Aug,26,2014 7 www.samhop.com.tw STU30N01 STD30N01 Ver 1.0 TO-251 Tube/TO-252 Tape and Reel Data TO-251 Tube 0.4 5.25 4.5 1.4 2.25 " A" 1.65 5.5 2~ӿ3.0 7.50 1.25 1.90 540 + 1.5 6.60 19.75 TO-252 Carrier Tape B0 E E2 T E1 P1 P2 D1 K0 FEED DIRECTION A0 D0 P0 UNIT:р PACKAGE TO-252 (16 р* A0 6.96 ²0.1 B0 10.49 ²0.1 K0 2.79 ²0.1 D0 D1 E E1 E2 P0 P1 P2 T ӿ2 ӿ1.5 + 0.1 - 0 16.0 ²0.3 1.75 ²0.1 7.5 ²0.15 8.0 ²0.1 4.0 ²0.1 2.0 ²0.15 0.3 ²0.05 TO-252 Reel T S M N K G V R H W UNIT:р TAPE SIZE 16 р REEL SIZE ӿ 330 M ӿ330 ² 0.5 N W ӿ97 ² 1.0 17.0 + 1.5 - 0 T H 2.2 ӿ13.0 + 0.5 - 0.2 K S 10.6 2.0 ²0.5 G R V Aug,26,2014 8 www.samhop.com.tw STU30N01 STD30N01 Ver 1.0 TOP MARKING DEFINITION TO-252 SamHop Logo STU30N01 XXXXXX Product No. SMC internal code No. (A,B,C...Z) Wafer Lot No. Production Date (1,2 ~ 9, A,B.....) Production Month (1,2 ~ 9, A,B,C) Production Year (2009 = 9, 2010 = A.....) Aug,26,2014 9 www.samhop.com.tw STU30N01 STD30N01 Ver 1.0 TOP MARKING DEFINITION TO-251 SamHop Logo STD30N01 XXXXXX Product No. SMC internal code No. (A,B,C...Z) Wafer Lot No. Production Date (1,2 ~ 9, A,B.....) Production Month (1,2 ~ 9, A,B,C) Production Year (2009 = 9, 2010 = A.....) Aug,26,2014 10 www.samhop.com.tw