STU30N01 STD30N01

Green
Product
STU30N01
STD30N01
S a mHop Microelectronics C orp.
Ver 1.0
N-Channel Logic Level Enhancement Mode Field Effect Transistor
FEATURES
Super high dense cell design for low R DS(ON).
PRODUCT SUMMARY
V DSS
ID
R DS(ON) (m Ω) Typ
100V
30A
30 @ VGS=10V
Rugged and reliable.
TO-252 and TO-251 Package.
G
D
G
S
STU SERIES
TO - 252AA( D - PAK )
S
STD SERIES
TO - 251 ( I - PAK )
ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted )
Symbol
Parameter
Limit
Units
VDS
Drain-Source Voltage
100
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-Continuous
30
A
25
A
IDM
c
TC=25°C
TC=70°C
ac
88
A
TC=25°C
68
W
TC=70°C
48
W
-55 to 175
°C
Thermal Resistance, Junction-to-Case
2.2
°C/W
Thermal Resistance, Junction-to-Ambient
50
°C/W
-Pulsed
PD
Maximum Power Dissipation
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JC
R JA
Details are subject to change without notice.
Aug,26,2014
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STU30N01
STD30N01
Ver 1.0
ELECTRICAL CHARACTERISTICS ( T C=25 °C unless otherwise noted )
Symbol
Parameter
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
VGS=0V , ID=250uA
100
IDSS
Zero Gate Voltage Drain Current
VDS=80V , VGS=0V
IGSS
Gate-Body Leakage Current
VGS= ±20V , VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(th)
RDS(ON)
gFS
VDS=VGS , ID=250uA
2
Typ
Max
Units
1
V
uA
±100
nA
2.8
4
V
Drain-Source On-State Resistance
VGS=10V , ID=15A
30
36
m ohm
Forward Transconductance
VDS=10V , ID=15A
23
S
VDS=25V,VGS=0V
f=1.0MHz
1235
136
76
pF
pF
pF
32
32
ns
ns
37
ns
12.4
ns
14.5
nC
3
nC
6
nC
b
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
tD(ON)
Turn-On Delay Time
tr
Rise Time
tD(OFF)
Turn-Off Delay Time
tf
Qg
Fall Time
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
b
VDD=50V
ID=1A
VGS=10V
RGEN= 6 ohm
VDS=50V,ID=15A,VGS=10V
VDS=50V,ID=15A,
VGS=10V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD
Diode Forward Voltage
VGS=0V,IS=5A
0.78
1.3
V
Notes
_ 1%.
_ 10us, Duty Cycle <
a.Pulse Test:Pulse Width <
b.Guaranteed by design, not subject to production testing.
c.Drain current limited by maximum junction temperature.
d.Mounted on FR4 Board of 1 inch2 , 2oz.
Aug,26,2014
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STU30N01
STD30N01
Ver 1.0
25
60
36
VGS=6V
24
VGS=5V
12
0
RDS(on)(m Ω)
ID, Drain Current(A)
VGS=7V
0
2.0
1.5
1.0
0.5
2.5
20
15
Tj=125 C
10
25 C
0
1.0
2.0
3.0
4.0
6.0
5.0
VDS, Drain-to-Source Voltage(V)
V GS, Gate-to-Source Voltage(V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
120
2.5
100
2.2
80
60
V G S =10V
40
20
V G S =10V
I D =15A
1.9
1.6
1.3
1.0
0.7
1
1
12
24
36
48
0
60
I D, Drain Current(A)
BVDSS, Normalized
Drain-Source Breakdown Voltage
V DS =V G S
I D =250uA
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25
0
25
50
50
75
100
125
150
T j ( °C )
Figure 4. On-Resistance Variation with Drain
Current and Temperature
1.6
1.4
25
Tj, Junction Temperature(° C )
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
Vth, Normalized
Gate-Source Threshold Voltage
-55 C
5
0
3.0
R DS(on), On-Resistance
Normalized
ID, Drain Current(A)
VGS=10V
48
75 100 125 150
Tj, Junction Temperature( ° C )
1.15
I D =250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25
0
25
50
75
100 125 150
Tj, Junction Temperature(° C )
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Breakdown Voltage Variation
with Temperature
Aug,26,2014
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STU30N01
STD30N01
Ver 1.0
20
120
Is, Source-drain current(A)
I D =15A
RDS(on)(m Ω)
100
80
125 C
60
75 C
40
25 C
20
0
2
0
4
8
6
0.25
0.50
0.75
1.00
1.25
VGS, Gate-to-Source Voltage(V)
VSD, Body Diode Forward Voltage(V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
Figure 8. Body Diode Forward Voltage
Variation with Source Current
V GS, Gate to Source Voltage(V)
C, Capacitance(pF)
75 C
0
1500
Ciss
1200
900
600
Coss
300
Crss
0
25 C
125 C
1
10
1800
0
10
5
10
15
20
25
10
VDS=50V
ID=15A
8
6
4
2
0
30
0
2
4
6
8
10
14
12
VDS, Drain-to-Source Voltage(V)
Qg, Total Gate Charge(nC)
Figure 9. Capacitance
Figure 10. Gate Charge
16
300
100
it
L im
N)
(O
0.3
0.1
1
1
S
1
VDS=50V,ID=1A
VGS=10V
10
100
s
DC
10
10
RD
Tf
0u
s
ms
I D, Drain Current(A)
TD(on)
10
1m
10
Switching Time(ns)
Tr
us
TD(off )
10
100
VGS=10V
Single Pulse
TA=25 C
1
10
100
Rg, Gate Resistance(Ω)
V DS, Drain-Source Voltage(V)
Figure 11. switching characteristics
Figure 12. Maximum Safe Operating Area
Aug,26,2014
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STU30N01
STD30N01
Ver 1.0
2
1
Normalized Transient
Thermal Resistance
D=0.5
0.2
0.1
P DM
0.1
0.05
t1
t2
0.02
0.01
1.
2.
3.
4.
S ING LE P ULS E
R J J A (t)=r (t) * R J J A
R J J A =S ee Datas heet
T J M-T A = P DM* R J J A (t)
Duty C ycle, D=t1/t2
0.01
10
-5
10
-4
10
-3
10
-2
10
-1
1
10
Square Wave Pulse Duration(sec)
Figure 13. Normalized Thermal Transient Impedance Curve
Aug,26,2014
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STU30N01
STD30N01
Ver 1.0
TO-252
E
E1
b3
L3
D1
D
H
3
2
1
L4
b
b2
e
A
SYMBOLS
c2
A
A1
b
b2
b3
c
c2
D
D1
e
E
E1
H
L
L1
L2
L3
L4
DETAIL "A"
c
L2
L
L1
A1
MILLIMETERS
MIN
MAX
2.380
2.200
0.000
0.127
0.635
0.889
0.762
1.143
5.200
5.460
0.450
0.600
0.450
0.580
6.000
6.223
5.380
5.210
2.286 BSC
6.400
6.731
4.318
4.900
9.400
10.400
1.400
1.770
2.743 REF
0.508 BSC
1.270
0.890
0.640
1.010
10 °
0°
DETAIL "A"
Aug,26,2014
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STU30N01
STD30N01
Ver 1.0
PACKAGE OUTLINE DIMENSIONS
TO-251
A
E
b3
c2
D1
E1
D
H
1
2
3
b2
L4
L5
L
b
e
b4
SYMBOL
c
MILLIMETERS
MIN
MAX
E
6.350
6.731
L
3.700
4.400
L4
0.698 REF
L5
0.972
1.226
D
5.970
9.670
6.223
11.450
0.630
0.850
0.760
4.950
1.140
0.450
0.550
H
b
b2
b3
b4
e
A
c
c2
D1
E1
5.460
2.286 BSC
2.390
2.180
0.400
0.610
0.400
0.610
5.100
4.318
Aug,26,2014
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STU30N01
STD30N01
Ver 1.0
TO-251 Tube/TO-252 Tape and Reel Data
TO-251 Tube
0.4
5.25
4.5
1.4
2.25
" A"
1.65
5.5
2~ӿ3.0
7.50
1.25
1.90
540 + 1.5
6.60
19.75
TO-252 Carrier Tape
B0
E
E2
T
E1
P1
P2
D1
K0
FEED DIRECTION
A0
D0
P0
UNIT:р
PACKAGE
TO-252
(16 р*
A0
6.96
²0.1
B0
10.49
²0.1
K0
2.79
²0.1
D0
D1
E
E1
E2
P0
P1
P2
T
ӿ2
ӿ1.5
+ 0.1
- 0
16.0
²0.3
1.75
²0.1
7.5
²0.15
8.0
²0.1
4.0
²0.1
2.0
²0.15
0.3
²0.05
TO-252 Reel
T
S
M
N
K
G
V
R
H
W
UNIT:р
TAPE SIZE
16 р
REEL SIZE
ӿ 330
M
ӿ330
² 0.5
N
W
ӿ97
² 1.0
17.0
+ 1.5
- 0
T
H
2.2
ӿ13.0
+ 0.5
- 0.2
K
S
10.6
2.0
²0.5
G
R
V
Aug,26,2014
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STU30N01
STD30N01
Ver 1.0
TOP MARKING DEFINITION
TO-252
SamHop Logo
STU30N01
XXXXXX
Product No.
SMC internal code No. (A,B,C...Z)
Wafer Lot No.
Production Date (1,2 ~ 9, A,B.....)
Production Month (1,2 ~ 9, A,B,C)
Production Year (2009 = 9, 2010 = A.....)
Aug,26,2014
9
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STU30N01
STD30N01
Ver 1.0
TOP MARKING DEFINITION
TO-251
SamHop Logo
STD30N01
XXXXXX
Product No.
SMC internal code No. (A,B,C...Z)
Wafer Lot No.
Production Date (1,2 ~ 9, A,B.....)
Production Month (1,2 ~ 9, A,B,C)
Production Year (2009 = 9, 2010 = A.....)
Aug,26,2014
10
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