MASWSS0161 High Power GaAs SPDT Switch DC - 2.0 GHz Features Rev. V4 Functional Schematic Positive Supply and Control Voltages 1 dB Compression Point: 36 dBm @ 8 V 3rd Order Intercept Point: 65 dBm @ 8 V Low Insertion Loss: 0.4 dB Low Power Consumption: 100 µW Fast Switching Speed Lead-Free SOIC-8 Plastic Package Halogen-Free “Green” Mold Compound 260°C Re-flow Compatible RoHS* Compliant Version of SW-277 8 7 6 5 1 2 3 4 Description The MASWSS0161 is a GaAs MMIC SPDT switch in a lead free SOIC-8 lead surface mount plastic package. This device is ideally suited for use where low power consumption is required. Typical applications include transmit/receive switching, switch matrices and switched filter banks in systems such as radio and cellular equipment, PCM, GPS, fiber optic modules, and other battery powered radio equipment. Pin Configuration3 Pin No. Pin Name Description 1 GND Ground, Thermal Contact 2 VDD Drain Voltage 3 RFC RF Common Port 4 GND Ground, Thermal Contact 5 RF1 RF Port 1 6 VC1 Control 1 7 VC2 Control 2 8 RF2 RF Port 2 The MASWSS0161 is fabricated using a monolithic GaAs MMIC using a mature 1 micron process. The process features full chip passivation for increased performance and reliability. Ordering Information1,2 Part Number Package MASWSS0161 Bulk Packaging MASWSS0161TR 1000 piece reel MASWSS0161SMB Sample Test Board 1. Reference Application Note M513 for reel size information. 2. All sample boards include 5 loose parts. 3. External DC blocking capacitors required on all RF ports. * Restrictions on Hazardous Substances, European Union Directive 2011/65/EU. 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support MASWSS0161 High Power GaAs SPDT Switch DC - 2.0 GHz Rev. V4 Electrical Specifications4: TA = +25°C, VDD = +5 V, VC = +5 V / 0 V, PIN = +30 dBm Parameter Test Conditions Units Min. Typ.5 Max. Insertion Loss DC - 0.5 GHz 0.5 - 1.0 GHz 1.0 - 2.0 GHz dB — 0.45 0.55 0.6 — 0.65 — Isolation DC - 0.5 GHz 0.5 - 1.0 GHz 1.0 - 2.0 GHz dB — 27 — 30 32 27 — VSWR DC - 2.0 GHz Ratio — 1.2:1 — 1 dB Compression Input Power (5 V Supply/Control) 0.9 GHz Input Power (8 V Supply/Control) 0.9 GHz dBm — 33 35.8 — TRISE, TFALL 10% to 90% RF, 90% to 10% RF ns — 30 — TON, TOFF 50% Control to 90% RF, 50% Control to 10% RF ns — 35 — Transients In-Band mV — 12 — 3rd Order Intercept Measured Relative to Input Power, 2-tone up to +10 dBm (5 V Supply/Control) 0.9 GHz (8 V Supply/Control) 0.9 GHz dBm — 55 65 — Control Current VC = +5 V µA — — 20 Supply Current VDD = +5 V µA — — 60 4. All specifications apply when operated with control voltages of 0 V for VC low and 5 to 10 V for VC high, and 50 Ω impedance at all RF ports, unless otherwise specified. High power (greater than 1 W) handling specifications apply to cold switching only. For input powers under 1 W, hot switching can be used. The high control voltage must be within ± 0.2 V of the supply voltage. External DC blocking capacitors are required on all RF ports. 5. Typical values listed for middle of frequency range noted. Absolute Maximum Ratings6,7 Parameter Absolute Maximum Input Power - 0.5 - 2.0 GHz 5 V Control and Supply 8 V Control and Supply 10 V Control and Supply 37 dBm 40 dBm 42 dBm Power Dissipation 1.0 W Supply Voltage -1 V ≤ VDD ≤ +12 V Control Voltage -1 V ≤ VC ≤ VDD +0.2 V Operating Temperature -40°C to +85°C Storage Temperature -65°C to +150°C Thermal Resistance 2 8 Truth Table9 Control Inputs Condition of Switch RF Common to Each RF Port VC1 VC2 RF1 RF2 1 0 Off On 0 1 On Off 9. “0” = 0 to +0.2 V @ 20 µA maximum. “1” = +5 V @ 20 µA typical to 10 V @ 500 µA maximum. θJC = 87°C/W 6. Exceeding any one or combination of these limits may cause permanent damage to this device. 7. MACOM does not recommend sustained operation near these survivability limits. 8. Thermal resistance is given for TA = +25°C. TCASE is the temperature of leads 1 and 4. M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support MASWSS0161 High Power GaAs SPDT Switch DC - 2.0 GHz Rev. V4 Typical Performance Curves Isolation Insertion Loss 1.0 40 0.8 35 0.6 30 0.4 25 +25°C -40°C +85°C 0.2 0.0 0.5 1.0 1.5 +25°C -40°C 85°C 20 2.0 15 0.5 1.0 Frequency (GHz) 1.5 2.0 Frequency (GHz) Compression vs. Control Voltage @ 900 MHz VSWR 2.0 40 +25°C -40°C +85°C 1.8 35 30 1.6 25 1.4 1dB .1dB 20 1.2 15 1.0 0.5 1.0 1.5 Frequency (GHz) 2.0 10 3 4 5 6 7 8 9 Control Voltage (VDC) 3 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support 10 MASWSS0161 High Power GaAs SPDT Switch DC - 2.0 GHz Rev. V4 Lead-Free SOIC-8† † Reference Application Note M538 for lead-free solder reflow recommendations. Meets JEDEC moisture sensitivity level 1 requirements. Plating is 100% matte tin over copper. Handling Procedures Please observe the following precautions to avoid damage: Static Sensitivity Gallium Arsenide Integrated Circuits are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these devices. 4 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support