MA44781

MA44781
Dual Pair Anti-Parallel Non-Magnetic PIN Diode
Rev. V4
Features
Schematic




Designed for MRI Applications
Anti-Parallel Self Bias Arrangement
Non-Magnetic Surface Mount Package
SPC Process for Superior Parametric
Repeatability
 RoHS* Compliant and 260°C Reflow Compatible
Description
The MA44781 device acts as a passive switch using
silicon PIN diodes in a surface mount package.
There are two sets of two PIN diode pairs
constructed in opposing configurations. The package
is sealed with a non-conductive epoxy resin and is
suitable for surface mount applications.
Internal Construction
The MA44781 device is well suited for MRI passive
switching applications. The PIN diodes become a
high Q, R-C network under small signal and behave
as an effective passive rectifier or short circuit under
high RF signal to tune and de-tune the resonant MRI
tank circuit. The anti-parallel doublet arrangement
provides for more efficient RF power handling.
Case Style 1134
Ordering Information
Part Number
Package
MA44781
ODS-1134
* Restrictions on Hazardous Substances, European Union Directive 2011/65/EU.
1
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MA44781
Dual Pair Anti-Parallel Non-Magnetic PIN Diode
Rev. V4
Electrical Specifications:
TA = +25°C, Breakdown Voltage @ IR = 10 µA, Vb = 60 V Minimum
Parameter
Test Conditions
Units
Min.
Typ.
Max.
Forward Voltage
IF = 20 µA
V
0.500
—
0.780
Delta Forward Voltage
IF = 20 µA (between each diodes)
mV
—
+/- 30
—
Junction Capacitance
(per diode)
f = 1 MHz, VR = -6.0 V
pF
0.15
—
0.50
Total Capacitance
VR = 0 V
pF
1.5
—
3.5
Absolute Maximum Ratings1
Parameter
Absolute Maximum
Reverse Voltage
60 V
Forward Current
2
(Per Diode Pair)
2A
Total Power Dissipation
3
2W
Operating Temperature
-55°C to +125°C
Storage Temperature
-55°C to +125°C
Junction Temperature
+175°C
Handling Procedures
Please observe the following precautions to avoid
damage:
Static Sensitivity
These electronic devices are sensitive to
electrostatic discharge (ESD) and can be damaged
by static electricity. Proper ESD control techniques
should be used when handling these devices.
1. Operation of this device above any one of these parameters
may cause permanent damage.
2. Total current per diode= I (rms) + I (dc) @ +25°C
3. Please refer to application note M538 for surface mounting
instructions.
2
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support