OPE5594S

GaAlAs Infrared Emitter OPE5594S
DIMENSIONS (Unit:mm)
5.7
24.0 Min
2-0.5
2.0
APPLICATIONS
• Optical emitters
• Optical switches
• Smoke sensors
• IR remote control
• IR sound transmission
8.7
7.7
1.3 Max
FEATURES
• High-output power
• Medium beam angle
• High reliability and long term stability
• Available for pulse operating
5.0
The OPE5594S is GaAlAs infrared emitting diode
that is designed for high reliability, high radiant intensity and
low forward voltage .This device is optimized for efficiency
at emission wavelength 940nm and has a high radiant
efficiency over a wide range of forward current.
This device is packaged T1-3/4 plastic package
and has medium beam angle with lensed package
and cup frame.
2.5
Anode
Cathode
Tolerance : ±0.2mm
STORAGE
• Condition : 5°C~35°C,R.H.60%
• Terms : within 3 months from production date
• Remark : Once the package is opened, the products should be used within a day.
Otherwise, it should be keeping in a damp proof box with desiccants.
* Please take proper steps in order to secure reliability and safety in required conditions and
environments for this device.
MAXIMUM RATINGS (Ta=25°C )
Item
Symbol
Rating
Unit
Power Dissipation
PD
150
Forward current
IF
100
Pulse forward current IFP
1.0
A
1
Reverse voltage
VR
5.0
Operating temp.
Topr.
-25~ +85
°C
Tsol.
260.
°C
Soldering temp. 2
1
.Duty ratio = 1/100, pulse width=0.1ms.
2
.Lead Soldering Temperature (2mm from case for 5sec.).
ELECTRO-OPTICALCHARACTERISTICS
Item
(Ta=25°C)
Symbol
Conditions
Forward voltage
Reverse current
Capacitance
VF
IR
Ct
Radiant intensity
Peak emission wavelength
Spectral bandwidth 50%
Half angle
Typ.
Max.
Unit
IF =100mA
VR= 5V
f = 1MHz
1.4
1.7
10
20
V
µA
pF
Ie
IF=100mA
60
mW/
p
IF= 100mA
940
nm
IF= 100mA
IF=100mA
45
±10
nm
deg.
43
Min.
OPE5594S
GaAlAs Infrared Emitter
FORWARD CURRENT Vs.
AMBIENT TEMP.
400
200
100
50
30
100
80
Ta=25
Ta=25
10
5
3
60
40
1
0.5
0.3
0.1
20
0
-20
RADIANT INTENSITY Vs.
FORWARD CURRENT.
0
20
40
60
80
Ambient Temperature Ta(
)
1
100
RELATIVE RADIANT INTENSITY Vs.
AMBIENT TEMP.
3 5 10
30 50 100 200 500
Forward Current IF(mA)
RELATIVE RADIANT INTENSITY Vs.
EMISSION WAVELENGTH.
1.0
IF=100mA
Ta=25
0.8
3
2
0.6
1
0.8
0.5
0.3
0.2
0.1
0.4
0.2
-20
0
20
40
60
80
0.0
800
100
Ambient Temperature Ta(
)
100
FORWARD CURRENT Vs.
FORWARD VOLTAGE
50
ANGULAR DISPLACEMENT Vs
RELATIVE RADIANT INTENSITY
Ta=25
Ta=25
30
20
-30°
-20°
-10°
0°
10°
20°
30°
40°
-40°
-50°
10
5
4
3
2
1
1.0
850 900 950 1000 1050
Emission Wavelength (nm)
50°
-60°
1.1
1.2
1.3
1.4
Forward Voltage VF(V)
1.5
1.6
44
60°
-70°
70°
-80°
-90°
1.0
80°
90°
1.0
0.5
0
0.5
Relative Radiant intensity