ETC OPE5687HP

High Speed GaAlAs Infrared Emitter
OPE5687HP
DIMENSIONS (Unit : mm)
5.7
5.0
24.0 Min
1.3 Max
FEATURES
• Ultra high-speed : 25ns rise time
• 880nm wavelength
• Wide beam angle
• Low forward voltage
• High power and high reliability
• Available for pulse operating
8.7
7.7
The OPE5687HP is GaAlAs infrared emitting diode
that is designed for high power, low forward
voltage and high speed rise / fall time.
This device is optimized for speed and efficiency
at emission wavelength 880nm and has a high radiant
efficiency over a wide range of forward current.
This device is packaged T1-3/4 package
and has narrow beam angle with lensed package
and cup frame. Especially this device is suited
as the emitter of data transmission without cable.
2-□0.5
2.0
2.5
APPLICATIONS
• Emitter of IrDA
• IR Audio and Telephone
• High speed IR communication
• IR LANs
• Available for wireless digital data transmission
Anode
Cathode
Tolerance : ±0.2mm
STORAGE
• Condition : 5°C~35°C,R.H.60%
• Terms : within 3 months from production date
• Remark : Once the package is opened, the products should be used within a day.
Otherwise, it should be keeping in a damp proof box with desiccants.
* Please take proper steps in order to secure reliability and safety in required conditions and environments
for this device.
MAXIMUM RATINGS
(Ta=25°C )
Item
Symbol
Rating
Power Dissipation
PD
150
Forward current
IF
100
Pulse forward current *1
IFP
1.0
Reverse voltage
VR
4.0
Operating temp.
Topr.
-25~ +85
*2
Soldering temp.
Tsol.
260.
*1
.Duty ratio = 1/100, pulse width=0.1ms.
*2
.Lead Soldering Temperature (2mm from case for 5sec.).
ELECTRO-OPTICALCHARACTERISTICS
Item
Symbol
Conditions
Forward voltage
Reverse current
Capacitance
Radiant intensity
Power
VF
IR
Ct
Ie
Po
IF=50mA
VR=4V
f=1MHz
IF=50mA
IF=100mA
Peak emission wavelength
Spectral bandwidth 50%
Half angle
λp
∆λ
∆θ
Optical rise & fall time(10%~90%)
tr/tf
Cut off frequency
*3
fc
Unit
mW
mA
A
V
°C
°C
(Ta=25°C)
Min.
Typ.
1.5
Max.
Unit
2.0
10
V
µA
20
50
35
mW/
mW
IF=50mA
IF=50
IF=50
880
45
±22
nm
nm
deg.
IF=50
IF=50mA DC
+10mA p-p
25/15
ns
14
MHz
25
20
*3
. 10logPo(fc MHz)/Po(0.1 MHz)=-3
OPE5687HP
High Speed GaAlAs Infrared Emitter
z
FORWARD CURRENT Vs.
AMBIENT TEMP.
z
Ta=25
Ta=25
80
200
100
50
30
60
10
5
100
3
40
1
0.5
0.3
0.1
20
0
RADIANT INTENSITY Vs.
FORWARD CURRENT.
1
-20 0 20 40 60 80 100
Ambient Temperature Ta( )
z
RELATIVE RADIANT INTENSITY Vs.
AMBIENT TEMP.
IF=50mA
z
3 5 10 30 50 100 200 500
Forward Current IF(mA)
RELATIVE RADIANT INTENSITY Vs.
EMISSION WAVELENGTH.
1.0
Ta=25
0.8
3
2
0.6
1
0.8
0.5
0.3
0.2
0.1
-20
0.4
0.2
0
20 40
60 80 100
Ambient Temperature Ta( )
z
FORWARD CURRENT Vs.
FORWARD VOLTAGE
100
Ta=25
50
0.0
700 750 800 850 900 950
Emission Wavelength λ(nm)
z
ANGULAR DISPLACEMENT Vs
RELATIVE RADIANT INTENSITY
Ta=25
30
20
-30°
-10°
0°
10°
20°
50°
-60°
60°
70°
-70°
1.0 1.1 1.2 1.3 1.4 1.5 1.6
Forward Voltage VF(V)
-80°
-90°
1.0
30°
40°
-40°
-50°
10
5
4
3
2
1
-20°
0.5
0
0.5
1.0
Relative Radiant intensity
80°
90°