Ultraviolet selective thin film sensor TW30DY2 Features • • • • • • • Schottky-type photodiode Intrinsic visible blindness due to wide-bandgap semiconductor material Built-in filter glass for low sensitivity above 400nm Large photoactive area No focusing lens needed, therefore large usable incident angle Designed to operate in photovoltaic mode TO-39 metal package Maximum Ratings Parameter Symbol Value Unit Topt -20 ... +80 °C Reverse voltage VRmax 3 V Forward current IFmax 5 mA Total power dissipation at 25°C Ptot 5 mW Operating temperature range Rev. 1.4 Page 1 [3] Ultraviolet selective thin film sensor TW30DY2 General Characteristics (Ta = 25 °C) Parameter Symbol Value Unit A 15,66 mm2 LxW 5.4 x 2.9 mm2 Max. viewing angle α app. 60 degree Shunt resistance (dark) Rs 100 MΩ Dark current at 10mV reverse bias Id 100 pA Open circuit voltage (200µW/cm2, λ=300nm) V0 >200 mV Short circuit current (200µW/cm2, λ=300nm) I0 564 nA VBR >3 V Symbol typ. Value Unit Max. spectral sensitivity S max 18 Wavelength of max. spectral sensitivity λ Smax 300 nm - 260-362 nm Active area Active area dimensions Breakdown voltage (dark) Spectral Characteristics (Ta = 25 °C) Parameter Range of spectral sensitivity (S=0.1*S max ) Visible blindness Rev. 1.4 S max S 400 nm mA W -1 10.000 Page 2 [3] Ultraviolet selective thin film sensor TW30DY2 Spectral Response Pin Layout Rev. 1.4 Page 3 [3]