RU205B N-Channel Advanced Power MOSFET MOSFET Features Pin Description • 20V/5A, RDS (ON) =30mΩ (Typ.) @ VGS=4.5V RDS (ON) =38mΩ (Typ.) @ VGS=2.5V • Low RDS (ON) • Super High Dense Cell Design • Reliable and Rugged SOT-23 • Lead Free and Green Available Applications • Load Switch • PWM Applications Absolute Maximum Ratings Symbol N-Channel MOSFET Parameter Rating Unit Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 20 VGSS Gate-Source Voltage ±12 Maximum Junction Temperature 150 °C -55 to 150 °C TA=25°C 1.25 A TA=25°C 20 TA=25°C 5 TA=70°C 4 TA=25°C 1 TA=70°C 0.64 TJ TSTG IS Storage Temperature Range Diode Continuous Forward Current V Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current(VGS=4.5V) PD RθJA ② Maximum Power Dissipation Thermal Resistance-Junction to Ambient Copyright Ruichips Semiconductor Co., Ltd Rev. B– MAR., 2012 ① A A 125 W °C/W www.ruichips.com RU205B Electrical Characteristics Symbol (TA=25°C Unless Otherwise Noted) Parameter Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) IGSS RDS(ON) ③ Test Condition VGS=0V, IDS=250µA RU205B Min. Typ. Max. V 20 VDS=20V, VGS=0V 1 TJ=85°C Gate Threshold Voltage VDS=VGS, IDS=250µA Gate Leakage Current VGS=±12V, VDS=0V 30 0.5 Unit - µA 1.5 V ±100 nA VGS=4.5V, IDS=5A 30 36 mΩ VGS=2.5V, IDS=3A 38 55 mΩ 1.0 V Drain-Source On-state Resistance Diode Characteristics VSD ③ trr Qrr Diode Forward Voltage Reverse Recovery Time ISD=1A, VGS=0V 13 ns 4 nC VGS=0V,VDS=0V,F=1MHz 0.8 Ω VGS=0V, VDS=10V, Frequency=1.0MHz 208 ISD=1A, dlSD/dt=100A/µs Reverse Recovery Charge ④ Dynamic Characteristics RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time tr Turn-on Rise Time td(OFF) Turn-off Delay Time tf 30 pF 18 6 VDD=10V, RL=10Ω, IDS=1A, VGEN=4.5V, RG=1Ω Turn-off Fall Time 10 14 ns 7 ④ Gate Charge Characteristics Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Notes: 4 VDS=16V, VGS=4.5V, IDS=1A 0.5 nC 1.2 Pulse width limited by safe operating area. ②When mounted on 1 inch square copper board, t ≤10sec. The value in any given application depends on the user's specific board design. ③Pulse test ; Pulse width≤300µs, duty cycle≤2%. ④Guaranteed by design, not subject to production testing. Copyright Ruichips Semiconductor Co., Ltd Rev. B– MAR., 2012 2 www.ruichips.com RU205B Typical Characteristics Drain Current Ptot - Power (W) ID - Drain Current (A) Power Dissipation Tj - Junction Temperature (°C) Tj - Junction Temperature (°C) Thermal Transient Impedance ID - Drain Current (A) Normalized Effective Transient Safe Operation Area VDS - Drain-Source Voltage (V) Copyright Ruichips Semiconductor Co., Ltd Rev. B– MAR., 2012 Square Wave Pulse Duration (sec) 3 www.ruichips.com RU205B Typical Characteristics Drain-Source On Resistance ID - Drain Current (A) RDS(ON) - On Resistance (mΩ) Output Characteristics VDS - Drain-Source Voltage (V) ID - Drain Current (A) Gate Threshold Voltage RDS(ON) - On - Resistance (m) Normalized Threshold Voltage Drain-Source On Resistance VGS - Gate-Source Voltage (V) Copyright Ruichips Semiconductor Co., Ltd Rev. B– MAR., 2012 Tj - Junction Temperature (°C) 4 www.ruichips.com RU205B Typical Characteristics Source-Drain Diode Forward IS - Source Current (A) Normalized On Resistance Drain-Source On Resistance Tj - Junction Temperature (°C) VSD - Source-Drain Voltage (V) Gate Charge C - Capacitance (pF) VGS - Gate-Source Voltage (V) Capacitance VDS - Drain-Source Voltage (V) Copyright Ruichips Semiconductor Co., Ltd Rev. B– MAR., 2012 QG - Gate Charge (nC) 5 www.ruichips.com RU205B Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms Copyright Ruichips Semiconductor Co., Ltd Rev. B– MAR., 2012 6 www.ruichips.com RU205B Ordering and Marking Information Device RU205B Marking ① 5XYWW Package Packaging Quantity Reel Size Tape width SOT-23 Tape&Reel 3000 7’’ 8mm ① The following characters could be different and means: X =Assembly site code Y =Year WW =Work Week Copyright Ruichips Semiconductor Co., Ltd Rev. B– MAR., 2012 7 www.ruichips.com RU205B Package Information SOT-23 SYMBOL MM INCH MM SYMBOL INCH MIN MAX MIN MAX A 0.900 1.150 0.035 0.045 E1 MIN MAX MIN MAX 2.250 2.550 0.089 A1 0.000 0.100 0.000 0.004 e 0.100 A2 0.900 1.050 0.035 0.041 e1 b 0.300 0.500 0.012 0.020 L c 0.080 0.150 0.003 0.006 L1 0.300 0.500 0.012 0.020 D 2.800 3.000 0.110 0.118 θ 0° 8° 0° 8° E 1.200 1.400 0.047 0.055 0.950 TYP. 1.800 2.000 0.550 REF. 0.037 TYP. 0.071 0.079 0.022 REF. ALL DIMENSIONS REFER TO JEDEC STANDARD DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS Copyright Ruichips Semiconductor Co., Ltd Rev. B– MAR., 2012 8 www.ruichips.com RU205B Customer Service Worldwide Sales and Service: [email protected] Technical Support: [email protected] Investor Relations Contacts: [email protected] Marcom Contact: [email protected] Editorial Contact: [email protected] HR Contact: [email protected] Legal Contact: [email protected] Shen Zhen RUICHIPS Semiconductor CO., LTD Room 501, the 5floor An Tong Industrial Building, NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA TEL: (86-755) 8311-5334 FAX: (86-755) 8311-4278 E-mail: [email protected] Copyright Ruichips Semiconductor Co., Ltd Rev. B– MAR., 2012 9 www.ruichips.com