RU2HE2D N-Channel Advanced Power MOSFET MOSFET Features Pin Description • 200V/1.2A, RDS (ON) =0.95Ω (Typ.) @ VGS=10V RDS (ON) =1Ω (Typ.) @ VGS=4.5V • ESD Protected • Reliable and Rugged SOT-223 • Fast Switching • Lead Free and Green Available Applications • Power Management • DC-DC Converter N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 200 VGSS Gate-Source Voltage ±20 Maximum Junction Temperature 150 °C -55 to 150 °C TA=25°C 1 A TA=25°C 4.5 TJ TSTG IS Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RθJA ② Thermal Resistance-Junction to Ambient Copyright Ruichips Semiconductor Co., Ltd Rev. B – JUL., 2011 TA=25°C V A ① TA=70°C 1.2 0.9 TA=25°C 2.5 TA=70°C 1.6 50 A W °C/W www.ruichips.com RU2HE2D Electrical Characteristics Symbol (TA=25°C Unless Otherwise Noted) Parameter Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) IGSS RDS(ON) ③ Test Condition VGS=0V, IDS=250µA RU2HE2D Min. Typ. 1 TJ=85°C VDS=VGS, IDS=250µA Gate Leakage Current VGS=±16V, VDS=0V VGS= 10V, IDS=1A 30 2 µA 4 V ±10 µA 0.95 1.2 Ω 1 1.5 Ω 1.2 V 3 Drain-Source On-state Resistance VGS= 4.5V, IDS=0.6A Unit V 200 VDS= 200V, VGS=0V Gate Threshold Voltage Max. Diode Characteristics VSD ③ trr Qrr Diode Forward Voltage Reverse Recovery Time ISD=1A, VGS=0V 52 ns 80 nC VGS=0V,VDS=0V,F=1MHz 1.2 Ω VGS=0V, VDS=100V, Frequency=1.0MHz 360 ISD=1A, dlSD/dt=100A/µs Reverse Recovery Charge ④ Dynamic Characteristics RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time tr Turn-on Rise Time td(OFF) Turn-off Delay Time tf pF 42 24 8 VDD=100V, RL=100Ω, IDS=1A, VGEN= 10V, RG=25Ω Turn-off Fall Time 16 ns 13 9 ④ Gate Charge Characteristics Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Notes: 12 VDS=160V, VGS= 10V, IDS=1A 2.8 15.6 nC 4.1 ①Current limited by maximum junction temperature. ②When mounted on 1 inch square copper board, t ≤10sec. ③Pulse test ; Pulse width≤300µs, duty cycle≤2%. ④Guaranteed by design, not subject to production testing. Copyright Ruichips Semiconductor Co., Ltd Rev. B – JUL., 2011 2 www.ruichips.com RU2HE2D Typical Characteristics Drain Current Ptot - Power (W) ID - Drain Current (A) Power Dissipation Tj - Junction Temperature (°C) Tj - Junction Temperature (°C) Safe Operation Area ID - Drain Current (A) Normalized Effective Transient Thermal Transient Impedance VDS - Drain-Source Voltage (V) Copyright Ruichips Semiconductor Co., Ltd Rev. B – JUL., 2011 Square Wave Pulse Duration (sec) 3 www.ruichips.com RU2HE2D Typical Characteristics Drain-Source On Resistance ID - Drain Current (A) RDS(ON) - On Resistance (mΩ) Output Characteristics VDS - Drain-Source Voltage (V) ID - Drain Current (A) Gate Threshold Voltage RDS(ON) - On - Resistance (m) Normalized Threshold Voltage Drain-Source On Resistance VGS - Gate-Source Voltage (V) Copyright Ruichips Semiconductor Co., Ltd Rev. B – JUL., 2011 Tj - Junction Temperature (°C) 4 www.ruichips.com RU2HE2D Typical Characteristics Source-Drain Diode Forward IS - Source Current (A) Normalized On Resistance Drain-Source On Resistance Tj - Junction Temperature (°C) VSD - Source-Drain Voltage (V) Gate Charge C - Capacitance (pF) VGS - Gate-Source Voltage (V) Capacitance VDS - Drain-Source Voltage (V) Copyright Ruichips Semiconductor Co., Ltd Rev. B – JUL., 2011 QG - Gate Charge (nC) 5 www.ruichips.com RU2HE2D Ordering and Marking Information Device Marking Package Packaging Quantity Reel Size Tape width RU2HE2D RU2HE2D SOT-223 Tape&Reel 2500 13’’ 12mm Copyright Ruichips Semiconductor Co., Ltd Rev. B – JUL., 2011 6 www.ruichips.com RU2HE2D Package Information SOT-223 SYMBOL MM INCH MM SYMBOL INCH MIN MAX MIN MAX MIN MAX MIN MAX A 1.520 1.800 0.060 0.071 E 3.300 3.700 0.130 0.146 A1 0.000 0.100 0.000 0.004 E1 6.830 7.070 0.269 0.278 A2 1.500 1.700 0.059 0.067 e b 0.660 0.820 0.026 0.032 e1 4.500 4.700 0.177 0.185 c 0.250 0.350 0.010 0.014 L 0.900 1.150 0.035 0.045 D 6.200 6.400 0.244 0.252 θ 0° 10° 0° 10° D1 2.900 3.100 0.114 0.122 2.300(BSC) 0.091(BSC) ALL DIMENSIONS REFER TO JEDEC STANDARD DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS Copyright Ruichips Semiconductor Co., Ltd Rev. B – JUL., 2011 7 www.ruichips.com RU2HE2D Customer Service Worldwide Sales and Service: [email protected] Technical Support: [email protected] Investor Relations Contacts: [email protected] Marcom Contact: [email protected] Editorial Contact: [email protected] HR Contact: [email protected] Legal Contact: [email protected] Shen Zhen RUICHIPS Semiconductor CO., LTD Room 501, the 5floor An Tong Industrial Building, NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA TEL: (86-755) 8311-5334 FAX: (86-755) 8311-4278 E-mail: [email protected] Copyright Ruichips Semiconductor Co., Ltd Rev. B – JUL., 2011 8 www.ruichips.com