Data Sheets - Skyworks Solutions, Inc.

DATA SHEET
Silicon Schottky Barrier Diode Bondable Chips and Beam
Leads
Applications
 Detectors
 Mixers
Features
 Available in both P-type and N-type low barrier designs
 Low 1/f noise
 Large bond pad chip design
 Planar passivated beam-lead and chip construction
Skyworks Green™ products are compliant with
all applicable legislation and are halogen-free.
For additional information, refer to Skyworks
Definition of Green™, document number
SQ04-0074.
Description
Skyworks beam-lead and chip Schottky barrier detector diodes
are designed for applications through 40 GHz in the Ka band.
They are made by the deposition of a suitable barrier metal on an
epitaxial silicon substrate to form the junction. The process and
choice of materials result in low series resistance along with a
narrow spread of capacitance values for close impedance control.
P-type silicon is used to obtain superior 1/f noise characteristics.
N-type silicon is also available.
Beam-lead and chip diodes can be mounted on special customer
substrates.
Unmounted beam-lead diodes are especially well suited for use in
Microwave Integrated Circuit (MIC) applications. Mounted beamlead diodes can be easily used in MIC, stripline, or other such
circuitry.
These “universal chips” are designed for a high degree of device
reliability in both commercial and industrial uses. The offset bond
pad assures that no mechanical damage occurs at the junction
during the wire bonding. Additionally, the 4 mil bond pad
eliminates performance variation due to bonding, improves
efficiency during manual operations, and is ideal for automated
assembly.
The choice of N- and P-type silicon allows the designer to
optimize the silicon material for the intended application:
 Doppler mixers and high-sensitivity detectors benefit from using
the low noise characteristics of the P-type silicon.
 Low conversion loss mixers and biased detectors can be
designed using standard N-type material.
Applications
These diodes are categorized by Tangential Signal Sensitivity
(TSS) for detector applications in four frequency ranges: S, X, Ku,
and Ka bands. However, they can also be used as modulators,
high-speed switches, and low-power limiters.
TSS is a parameter that describes a diode’s detector sensitivity. It
is defined as the amount of signal power, below a one-milliwatt
reference level, required to produce an output pulse with an
amplitude sufficient to raise the noise fluctuations by an amount
equal to the average noise level. TSS is approximately 4 dB above
the minimum detectable signal.
The P-type Schottky diodes in this Data Sheet are optimized for
low noise in the 1/f region. They require a small forward bias (to
reduce video resistance) if efficient operation is required. The bias
not only increases sensitivity but also reduces parameter variation
Skyworks Solutions, Inc. • Phone [781] 376-3000 • Fax [781] 376-3100 • [email protected] • www.skyworksinc.com
200847H • Skyworks Proprietary Information • Products and Product Information are Subject to Change Without Notice • September 8, 2014
1
SILICON SCHOTTKY BARRIER DIODES
due to temperature change. Video impedance is a direct function
of bias and follows the 26/l (mA) relationship. This is important to
pulse fidelity, since the video impedance together with the
detector output capacitance affects the effective amplifier
bandwidth.
Chips, Beam-Lead Diodes, Capacitors: Bonding Methods and
Packaging (document #200532).
Bias does, however, increase typical noise, particularly in the 1/f
region. Therefore, it should be kept as low as possible (typically 5
to 50 μA).
Electrical and physical specifications for the silicon Schottky
barrier diodes are provided in Tables 1 through 3. SPICE model
parameters are defined in Table 4. Typical performance
characteristics are shown in Figures 1 through 4. Typical video
detector circuits are shown in Figure 5.
Additional bonding and handling methods are contained in the
Skyworks Application Notes, Waffle Pack Chip Carrier
Handling/Opening Procedure (document #200146) and Diode
Electrical and Mechanical Specifications
Table 1. Electrical Specifications: Beam-Lead P-Type Detector Schottky Diodes (Note 1)
Electrical Characteristics
Frequency
Band
Part Number
TSS
(dBm)
(Note 2)
RV
(Ω)
CJ @ 0 V
(pF)
Typ.
Min.
Max.
Max.
+50
500
700
0.15
VF @ 1 mA
(mV)
Vb @ 10 μA
(V)
Test
Frequency
(GHz)
Outline
Drawing
200-350
2
10.00
491-006
X
DDB2503-000
Ku
DDB2504-000
+48
500
700
0.10
200-350
2
16.00
491-006
K
DDB2265-000
+50
(Note 3)
800
(Note 3)
1200
(Note 3)
0.10
300-450
3
24.15
491-006
Note 1: Performance is guaranteed only under the conditions listed in this Table.
Note 2: Bias = 50 μA
Video bandwidth = 10 MHz.
Note 3: Bias = 30 μA
Table 2. Electrical Specifications: P-Type Detector Schottky Diode Universal Chips
Electrical Characteristics
Frequency
Band
Part Number
Barrier
RV
(Ω)
TSS
(dBm)
(Note 1)
CJ @ 0 V
(pF)
Typ.
Min.
Max.
VF @ 1 mA
(mV)
RT @ 10 mA
(Ω)
(Note 2)
VB @ 10 μA
(V)
Max.
Min.
Ku
CDB7620-000
Low
537
+40
0.15
250-350
30
2
571-006
K
CDB7619-000
Low
735
+50 (Note 3)
0.10
275-375
40
3
571-006
Note 1: Bias = 50 μA
Video bandwidth = 10 MHz
RV = 2800 Ω
Note 2: Rt is the slope resistance @ 10 mA. The maximum series resistance (Rs) is calculated as: Rs = Rt – 2.8.
Note 3: Bias = 30 μA
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2
Outline
Drawing
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DATA SHEET • SILICON SCHOTTKY BARRIER DIODES
Table 3. Electrical Specifications: N-Type Detector Schottky Diode Chips
Electrical Characteristics
Frequency
Band
Part Number
VF @ 1 mA
(mV)
Barrier
CJ @ 0 V
(pF)
RT @ 10 mA
(Ω)
VB @ 10 μA
(V)
Max.
Max.
Min.
RV
(Ω)
Outline
Drawing
Typ.
X
CDF7623-000
Low
240-300
0.30
10
2
245
571-011
K
CDF7621-000
Low
270-350
0.10
20
2
680
571-011
Ku
CME7660-000
Medium
350-450
0.15
10
3
–
571-011
K
CDE7618-000
Medium
375-500
0.10
20
3
–
571-011
Ku
CDP7624-000
Medium/High
450-575
0.15
15
3
–
571-011
Table 4. SPICE Model Parameters
Parameter
Units
Part Number
CDB7620-000
CDF7621-000
CDC7623-000
CDB7619-000
IS
A
4E-08
9E-08
1.1E-07
3E-08
RS
Ω
4
6
5
30
N
–
1.20
1.10
1.10
1.04
TT
sec
1E-11
1E-11
1E-11
1E-11
CJO
pF
0.15
0.11
0.20
0.11
M
–
0.35
0.30
0.30
0.32
EG
eV
0.69
0.69
0.69
0.69
XTI
–
2
2
2
2
FC
–
0.5
0.5
0.5
0.5
BV
V
10
2.5
2.5
3.0
IBV
A
1E-05
1E-05
1E-05
1E-05
VJ
V
0.495
0.510
0.510
0.540
Skyworks Solutions, Inc. • Phone [781] 376-3000 • Fax [781] 376-3100 • [email protected] • www.skyworksinc.com
200847H • Skyworks Proprietary Information • Products and Product Information are Subject to Change Without Notice • September 8, 2014
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DATA SHEET • SILICON SCHOTTKY BARRIER DIODES
10–1
10–1
10–2
10–2
Forward Current (A)
Forward Current (A)
Typical I-V Characteristics
10–3
10–4
10–5
10–3
10–4
10–5
10–6
10–6
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Forward Voltage (V)
Forward Voltage (V)
Figure 1. CDF7621-000
Figure 2. CDB7619-000
10000.00
RL = 1 MΩ
Typical Performance Data
RL = 1 kΩ
1000.00
RL = 100 Ω
RL = 100 kΩ
100.00
RL = 10 Ω
10.00
Voltage Output (mV)
RL = 10 kΩ
RL = 1 MΩ
Voltage Output (mV)
RL = 1 kΩ
1000.00
10000.00
50 μA
100.00
5 μA
50 μA
10.00
5 μA
1.00
RL = 1 Ω
1.00
0.10
–30
RL = 10 Ω
0.10
–30
Test Conditions:
f = 9.375 GHz
DC Bias = 0
–20
–10
0
+10
+20
Test Conditions:
f = 9.375 GHz
5 μA
–20
–10
0
+10
+20
Input Power (dBm)
Input Power (dBm)
Figure 3. Voltage Output vs Input Power as a Function of Load
Resistance
Figure 4. Voltage Output vs Input Power as a Function of Load
Resistance and Bias
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DATA SHEET • SILICON SCHOTTKY BARRIER DIODES
Unbiased
RF Bypass
Input
Video Output
Load Resistor
DC Return
Bias Supply
Biased
RF Bypass
Input
Video Output
Load Resistor
DC Return
Multi-Octave–High Sensitivity
Unbiased
RF Bypass
Input
Video Output
Load Resistor
Bias Supply
Biased
Input
RF Bypass
Video Output
Load Resistor
50 Ω
Broadband–Low Sensitivity
Figure 5. Typical Video Detector Circuits
Skyworks Solutions, Inc. • Phone [781] 376-3000 • Fax [781] 376-3100 • [email protected] • www.skyworksinc.com
200847H • Skyworks Proprietary Information • Products and Product Information are Subject to Change Without Notice • September 8, 2014
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DATA SHEET • SILICON SCHOTTKY BARRIER DIODES
Shipping Information
Individual Chips
Skyworks silicon Schottky barrier diodes are provided in waffle
packs for bare die and in gel-pack carriers for beamlead devices.
Dimensions are provided in Figures 6, 7, and 8.
0.013 (0.33 mm)
0.011 (0.28 mm)
0.011 (0.28 mm)
0.009 (0.23 mm)
0.006 (0.15 mm)
0.004 (0.10 mm)
2 Plcs.
0.009 (0.23 mm)
0.007 (0.18 mm)
0.006 (0.015 mm)
0.003 (0.005 mm)
0.009 (0.23 mm)
0.007 (0.18 mm)
0.0025 (0.06 mm)
Max.
Top View
Schematic
Figure 6. 491-006 Package Dimensions
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DATA SHEET • SILICON SCHOTTKY BARRIER DIODES
Cathode/Bonding Pad
Diameter 0.0035 to 0.0045 (0.089 mm to 0.114 mm)
0.0095 (0.241 mm)
0.0115 (0.292 mm)
0.0095 (0.241 mm)
0.0115 (0.292 mm)
0.0085 (0.216 mm)
0.0065 (0.165 mm)
Backside Contact (Anode)
Gold Metallization
Dimensions are in inches (millimeters shown in parentheses)
S3181
Figure 7. 571-006 Package Dimensions
Anode/Bonding Pad
Diameter 0.0035 to 0.0045 (0.089 mm to 0.114 mm)
0.0095 (0.241 mm)
0.0115 (0.292 mm)
0.0095 (0.241 mm)
0.0115 (0.292 mm)
0.0085 (0.216 mm)
0.0065 (0.165 mm)
Dimensions are in inches (millimeters shown in parentheses)
S3182
Figure 8. 571-011 Package Dimensions
Skyworks Solutions, Inc. • Phone [781] 376-3000 • Fax [781] 376-3100 • [email protected] • www.skyworksinc.com
200847H • Skyworks Proprietary Information • Products and Product Information are Subject to Change Without Notice • September 8, 2014
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DATA SHEET • SILICON SCHOTTKY BARRIER DIODES
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