1SS400 : Diodes

Data Sheet
Switching Diode
1SS400
Dimensions (Unit : mm)
Applications
High speed switching
Land size figure (Unit : mm)
0.8±0.05
0.12±0.05
1.6±0.1
1.2±0.05
Features
1)Ultra small mold type. (EMD2)
2)High reliability
1.7
0.6
0.8
EMD2
Construction
Silicon epitaxial planar
0.3±0.05
Structure
0.6±0.1
ROHM : EMD2
JEDEC :SOD-523
JEITA : SC-79
dot (year week factory)
Taping dimensions (Unit : mm)
0.2±0.05
φ1.5±0.05
2.0±0.05
0.95±0.06
0
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
VRM
Reverse voltage (repetitive)
VR
Reverse voltage (DC)
IFM
Forward voltage(repetitive peak)
Average rectified forward current
Io
Isurge
Surge current(t=1s)
Junction temperature
Tj
Storage temperature
Tstg
Electrical characteristics (Ta=25C)
Parameter
Symbol
VF
Forward voltage
Reverse current
Capacitance between terminals
Reverse recovery time
空ポケット
Empty
pocket 4.0±0.1
Limits
2.0±0.05
1.26±0.05
0
3.5±0.05
0.6
2.45±0.1
1.3±0.06
0
φ0.5
8.0±0.15
1.75±0.1
4.0±0.1
0.2
0.76±0.05
Unit
V
V
mA
mA
mA
C
C
90
80
225
100
500
125
55 to 125
Min.
Typ.
Max.
Unit
-
-
1.2
V
Conditions
IF=100mA
IR
-
-
0.1
μA
VR=80V
Ct
-
-
3
pF
trr
-
-
4
ns
VR=0.5V , f=1MHz
VR=6V , IF=10mA , RL=100Ω
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1/2
2015.04 - Rev.E
Data Sheet
1SS400
10
100000
100
Ta=125℃
10
Ta=25℃
1
Ta=25℃
0.1
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
10000
Ta=75℃
1000
100
Ta=25℃
10
Ta=25℃
1
0.01
1
0.1
0.1
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
0
20
FORWARD VOLTAGE : VF(V)
VF-IF CHARACTERISTICS
40
60
80
100
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
0
120
100
940
REVERSE CURRENT : IR(nA)
Ta=25℃
IF=100mA
n=30pcs
930
920
AVE:930.3mV
910
5
10
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
15
1
Ta=25℃
VR=80V
n=30pcs
80
Ta=25℃
VR=0.5V
f=1MHz
n=10pcs
0.9
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
950
FORWARD VOLTAGE : V F(mV)
f=1MHz
Ta=125℃
REVERSE CURRENT : IR(nA)
FORWARD CURRENT : I F(mA)
Ta=75℃
60
40
AVE:12.47nA
20
0.8
0.7
0.6
AVE:0.698pF
0.5
0.4
0.3
0.2
0.1
900
0
0
VF DISPERSION MAP
IR DISPERSION MAP
100
5
1cyc
15
8.3ms
10
AVE:4.05A
5
Ta=25℃
VR=6V
IF=10mA
RL=100Ω
Irr=0.1*IR
n=10pcs
4
3
2
PEAK SURGE
FORWARD CURRENT : I FSM(A)
Ifsm
REVERSE RECOVERY TIME:trr(ns)
PEAK SURGE
FORWARD CURRENT : I FSM(A)
20
Ct DISPERSION MAP
AVE:1.20ns
1
10
1
Ifsm
8.3m 8.3m
1cyc
0
0
0.1
1
IFSM DISPERSION MAP
trr DISPERSION MAP
1
Ifsm
t
0.1
Rth(j-a)
100
Rth(j-c)
Mounted on epoxy board
IF=10mA
IM=1mA
10
1ms
time
300us
1
10
TIME:t(ms)
IFSM-t CHARACTERISTICS
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© 2015 ROHM Co., Ltd. All rights reserved.
100
0.001
7
6
5
4
0.1
1
10
TIME:t(s)
Rth-t CHARACTERISTICS
2/2
100
AVE:1.58kV
3
2
0
0.01
AVE:6.43kV
8
1
1
0.1
9
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
TRANSIENT
THAERMAL IMPEDANCE:Rth (℃/W)
PEAK SURGE
FORWARD CURRENT : I FSM(A)
10
100
10
1000
100
10
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
1000
ESD DISPERSION MAP
2015.04 - Rev.E
Notice
Notes
1) The information contained herein is subject to change without notice.
2) Before you use our Products, please contact our sales representative and verify the latest specifications :
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Therefore, in order to prevent personal injury or fire arising from failure, please take safety
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provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
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