1SS355 : Diodes

Switching Diode
1SS355
Datasheet
lDimensions (Unit : mm)
High speed switching
lLand size figure (Unit : mm)
0.1±0.1
0.05
0.9MIN.
2.1
1.25±0.1
0.8MIN.
lApplication
1) Ultra small mold type.
(UMD2)
2.5±0.2
1.7±0.1
lFeatures
UMD2
2) High reliability.
lStructure
0.7±0.2
ROHM : UMD2 0.3±0.05
0.1
JEDEC : SOT-323
dot (year week factory)
JEITA : SC-90/A
lTaping specifications (Unit : mm)
lConstruction
4.0±0.1
0.3±0.1
φ1.55±0.05
2.0±0.05
f1.550.05
f1.05
φ1.05
4.0±0.1
1.40±0.1
2.8±0.1
2.75
8.0±0.2
3.5±0.05
1.75±0.1
Silicon epitaxial planar
1.0±0.1
lAbsolute maximum ratings (Ta= 25°C)
Parameter
Symbol
Limits
Unit
Reverse voltage (repetitive peak)
VRM
90
V
Reverse voltage (DC)
VR
80
V
Forward current
IFM
225
mA
Average rectified forward current
Io
100
mA
Surge current (t=1s)
Isurge
500
mA
Junction temperature
Tj
150
°C
Storage temperature
Tstg
-55 to +150
°C
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Forward voltage
VF
-
-
1.2
V
Reverse current
IR
-
-
0.1
mA VR=80V
Capacitance between terminals
Ct
-
-
3
pF VR=0.5V, f=1MHz
Reverse recovery time
trr
-
-
4
ns
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1/5
IF=100mA
VR=6V, IF=10mA,RL=100W
2013.11 - Rev.E
Data Sheet
1SS355
lElectrical characteristic curves
10000
REVERSE CURRENT : IR(nA)
FORWARD CURRENT : IF(mA)
100
Ta = 125°C
10
Ta = 75°C
Ta = 25°C
1
Ta = -25°C
0.1
100
Ta = 75°C
10
Ta = 25°C
1
0.1
0.01
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
Ta = 125°C
1000
FORWARD VOLTAGE : VF(V)
VF-IF CHARACTERISTICS
Ta = -25°C
0
10
20
30
40
50
80
910
FORWARD VOLTAGE : VF(mV)
f = 1MHz
CAPACITANCE BETWEEN
TERMINALS : Ct(pF)
70
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
10
1
0.1
60
0
10
20
900
AVE : 885.9mV
890
880
870
860
30
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
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Ta=25°C
IF=100mA
n=30pcs
VF DISPERSION MAP
2/5
2013.11 - Rev.E
Data Sheet
1SS355
lElectrical characteristic curves
1
100
REVERSE CURRENT : IR(nA)
90
80
70
60
50
40
30
AVE : 15.4nA
20
0.99
CAPACITANCE BETWEEN
TERMINALS : Ct(pF)
Ta=25°C
VR=80V
n=30pcs
0.98
0.96
0.95
0.94
0.93
0.92
10
0.91
0
0.9
IR DISPERSION MAP
Ct DISPERSION MAP
15
AVE : 13.6A
8.3ms
1cyc.
10
5
REVERSE RECOVERY TIME : trr(ns)
PEAK SURGE
FORWARD CURRENT : IFSM(A)
20
IFSM
AVE : 0.961pF
0.97
Ta=25°C
f=1MHz
VR=0V
n=10pcs
3
Ta=25°C
VR=6V
IF=10mA
RL=100W
2.5
2
AVE : 1.3ns
1.5
1
0.5
0
0
IFSM DISPERSION MAP
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trr DISPERSION MAP
3/5
2013.11 - Rev.E
Data Sheet
1SS355
lElectrical characteristic curves
100
IFSM
8.3ms
15
PEAK SURGE
FORWARD CURRENT : IFSM(A)
PEAK SURGE
FORWARD CURRENT : IFSM(A)
20
8.3ms
1cyc.
10
5
0
1
10
IFSM
time
10
1
100
1
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
Rth(j-c)
Mounted on glass epoxy board
IM=1mA
IF=10A
time
1ms 300ms
1
0.001
0.1
10
1000
REVERSE POWER DISPERSION : PR (W)
TRANSIENT
THERMAL IMPEDANCE : Rth (°C/W)
Rth(j-a)
10
0.001
DC
0.0005
D = 1/2
Sin(θ=180)
0
0
50
100
REVERSE VOLTAGE : VR(V)
VR-PR CHARACTERISTICS
TIME : t(s)
Rth-t CHARACTERISTICS
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100
TIME : t(ms)
IFSM-t CHARACTERISTICS
1000
100
10
4/5
2013.11 - Rev.E
Data Sheet
1SS355
lElectrical characteristic curves
Io
0A
0.2
DC
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
0V
t
VR
D=t/T
VR=40V
Tj=150°C
T
0.15
D = 1/2
0.1
Sin(θ=180)
0.05
0
0
25
50
75
100
125
t
0.20
DC
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
0V
Io
0A
0.15
D = 1/2
0.10
Sin(θ=180)
0.05
0.00
150
T
VR
D=t/T
VR=40V
Tj=150°C
0
25
50
75
100
125
150
CASE TEMPERATURE : Tc(°C)
DERATING CURVE (Io-Tc)
AMBIENT TEMPERATURE : Ta(°C)
DERATING CURVE (Io-Ta)
ELECTROSTATIC
DISCHARGE TEST ESD(kV)
20
15
AVE : 9.4kV
10
5
0
AVE : 2.4kV
C=200pF
R=0W
C=100pF
R=1.5kW
ESD DISPERSION MAP
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© 2013 ROHM Co., Ltd. All rights reserved.
5/5
2013.11 - Rev.E
Notice
Notes
1) The information contained herein is subject to change without notice.
2) Before you use our Products, please contact our sales representative and verify the latest specifications :
3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
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responsibility for any damages arising out of the use of our Poducts beyond the rating specified by
ROHM.
4) Examples of application circuits, circuit constants and any other information contained herein are
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
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R1102A