Schottky Barrier Diode RBQ20NS65AFH Datasheet AEC-Q101 Qualified lLand size figure (Unit : mm) lDimensions (Unit : mm) lApplication General rectification BQ20NS 65A lFeatures 1 1) Cathode common dual type (LPDS) LPDS 2) Low IR lStructure lConstruction Silicon epitaxial planar Cathode ROHM : LPDS JEITA : TO263S 1 Manufactuare Year, Week and Day Anode Anode lTaping specifications (Unit : mm) lAbsolute maximum ratings (Tc= 25°C) Parameter Symbol Limits Unit Reverse voltage (repetitive) VRM 65 V Reverse voltage (DC) VR 65 V Average rectified forward current (*1) Io 20 A IFSM 100 A Tj 150 °C Forward current surge peak (60Hz・1cyc) (*2) Junction temperature -40 to +150 Storage temperature Tstg (*1) 60Hz half sin wave, 1/2 Io per diode. (*2) 60Hz half sin wave, one cycle, non-repetitive at Tj=25°C. °C lElectrical characteristics (Tj = 25°C) Parameter Conditions Symbol Min. Typ. Max. Unit Forward voltage VF - - 0.69 V IF=10A Reverse current IR - - 0.3 mA VR=65V www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 1/5 2013.06 - Rev.B Data Sheet RBQ20NS65AFH lElectrical characteristic curves 100000 10 REVERSE CURRENT : IR(mA) FORWARD CURRENT : IF(A) 100 Ta = 150°C Ta = 125°C 1 Ta = 75°C Ta = 25°C 0.1 Ta = -25°C 0.01 0 10000 1000 10 1 FORWARD VOLTAGE : VF(mV) CAPACITANCE BETWEEN TERMINALS : Ct(pF) 100 10 5 10 15 20 25 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 Ta=25°C IF=10A n=30pcs 640 630 620 AVE : 610.4mV 610 600 590 580 570 560 550 30 REVERSE VOLTAGE : VR(V) VR-Ct CHARACTERISTICS www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. Ta = -25°C 650 f = 1MHz 0 Ta = 25°C REVERSE VOLTAGE : VR(V) VR-IR CHARACTERISTICS 1000 1 Ta = 75°C 0.1 FORWARD VOLTAGE : VF(mV) VF-IF CHARACTERISTICS 10000 Ta = 125°C 100 0.01 100 200 300 400 500 600 700 800 Ta = 150°C VF DISPERSION MAP 2/5 2013.06 - Rev.B Data Sheet RBQ20NS65AFH lElectrical characteristic curves Ta=25°C VR=65V n=30pcs 40 AVE : 25.41mA 30 20 10 950 930 920 910 AVE : 902pF 900 890 880 870 860 0 850 IR DISPERSION MAP IFSM 400 350 8.3ms 1cyc. AVE : 233A 250 200 150 100 50 0 REVERSE RECOVERY TIME : trr(ns) 450 300 Ct DISPERSION MAP 30 500 PEAK SURGE FORWARD CURRENT : IFSM(A) Ta=25°C f=1MHz VR=0V n=10pcs 940 CAPACITANCE BETWEEN TERMINALS : Ct(pF) REVERSE CURRENT : IR(mA) 50 IFSM DISPERSION MAP www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. Ta=25°C IF=0.5A IR=1A Irr=0.25*IR n=10pcs 25 20 15 AVE : 13.3ns 10 5 0 trr DISPERSION MAP 3/5 2013.06 - Rev.B Data Sheet RBQ20NS65AFH lElectrical characteristic curves 500 450 IFSM 400 350 8.3ms PEAK SURGE FORWARD CURRENT : IFSM(A) PEAK SURGE FORWARD CURRENT : IFSM(A) 500 8.3ms 1cyc. 300 250 200 150 100 50 0 1 10 450 time 350 300 250 200 150 100 50 0 100 IFSM 400 1 1000 25 100 20 Rth(j-a) 10 1 Rth(j-c) 0.1 0.01 0.001 0.01 0.1 1 10 100 D = 1/2 15 Sin(θ=180) DC 10 5 0 1000 0 10 20 30 40 AVERAGE RECTIFIED FORWARD CURRENT : Io(A) Io-Pf CHARACTERISTICS TIME : t(s) Rth-t CHARACTERISTICS www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 100 TIME : t(ms) IFSM-t CHARACTERISTICS FORWARD POWER DISPERSION : PF (W) TRANSIENT THERMAL IMPEDANCE : Rth (°C/W) NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 10 4/5 2013.06 - Rev.B Data Sheet RBQ20NS65AFH lElectrical characteristic curves 10 AVERAGE RECTIFIED FORWARD CURRENT : Io(A) 50 REVERSE POWER DISPERSION : PR (W) 8 6 DC 4 D = 1/2 Sin(θ=180) 2 0 0 10 20 30 40 50 60 45 0A 40 0V 35 20 15 10 45 0V 40 DC T 35 30 t 5 Io 30 VR D=t/T VR=30V Tj=150°C 25 D = 1/2 25 20 15 Sin(θ=180) 10 0 25 50 75 100 125 25 50 75 100 125 150 150 AVE : 18.6kV 15 10 AVE : 5.8kV 5 0 CASE TEMPERATURE : Tc(°C) DERATING CURVE (Io-Tc) www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 0 20 5 0 Sin(θ=180) AMBIENT TEMPERATURE : Ta(°C) DERATING CURVE (Io-Ta) ELECTROSTATIC DISCHARGE TEST ESD(kV) AVERAGE RECTIFIED FORWARD CURRENT : Io(A) 0A VR D=t/T VR=30V Tj=150°C 25 REVERSE VOLTAGE : VR(V) VR-PR CHARACTERISTICS 50 t T DC 30 0 70 D = 1/2 Io C=200pF R=0W C=100pF R=1.5kW ESD DISPERSION MAP 5/5 2013.06 - Rev.B Notice Notes 1) The information contained herein is subject to change without notice. 2) Before you use our Products, please contact our sales representative and verify the latest specifications : 3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM. 4) Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. 5) The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. 6) The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communication, consumer systems, gaming/entertainment sets) as well as the applications indicated in this document. 7) The Products specified in this document are not designed to be radiation tolerant. 8) For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, servers, solar cells, and power transmission systems. 9) Do not use our Products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters. 10) ROHM shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein. 11) ROHM has used reasonable care to ensur the accuracy of the information contained in this document. However, ROHM does not warrants that such information is error-free, and ROHM shall have no responsibility for any damages arising from any inaccuracy or misprint of such information. 12) Please use the Products in accordance with any applicable environmental laws and regulations, such as the RoHS Directive. For more details, including RoHS compatibility, please contact a ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations. 13) When providing our Products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the US Export Administration Regulations and the Foreign Exchange and Foreign Trade Act. 14) This document, in part or in whole, may not be reprinted or reproduced without prior consent of ROHM. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. R1102A