RBR3L60A : Diodes

Schottky Barrier Diode
Data Sheet
RBR3L60A
lApplication
lDimensions (Unit : mm)
General rectification
lLand Size Figure (Unit : mm)
2.0
1) Small power mold type
(PMDS)
5.0±0.3
4.5±0.2
1.2±0.3
lFeatures
4.2
2.0
2.6±0.15
0.1±0.02
1
2
PMDS
2) High reliability
Cathode
3) Low VF
2.0±0.2
lStructure
1.5±0.2
ROHM : PMDS
JEDEC : SOD-106
1
2
: Manufacture Date
lConstruction
Anode
lTaping Dimensions (Unit : mm)
Silicon epitaxial planar type
2.0±0.05
fφ 1.55±0.05
0.3
12±0.2
5.5±0.05
5.3±0.1
0.05
9.5±0.1
1.75±0.1
4.0±0.1
fφ 1.55
2.9±0.1
4.0±0.1
2.8MAX
lAbsolute Maximum Ratings (Tc= 25°C)
Parameter
Symbol
Conditions
Limits
Unit
Repetitive peak reverse voltage
VRM
Duty≦0.5
60
V
Reverse voltage
VR
Direct reverse voltage
60
V
Average forward rectified current
Io
Glass epoxy board mounted, 60Hz half sin wave,
3
A
40
A
Non-repetitive forward current surge peak
IFSM
resistive load , Tc=70ºC Max.
60Hz half sin wave, one cycle,
non-repetitive at Ta=25ºC
Tj
-
150
°C
Tstg
-
-55 to +150
°C
Operating junction temperature
Storage temperature
lElectrical Characteristics (Tj= 25°C)
Parameter
Symbol
Conditions
Min.
Forward voltage
VF
IF=3.0A
-
-
0.66
V
Reverse current
IR
VR=60V
-
-
100
mA
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1/5
Typ. Max. Unit
2015.03 - Rev.A
Data Sheet
RBR3L60A
lElectrical Characteristic Curves
100000
10
Tj = 150°C
REVERSE CURRENT : IR (mA)
FORWARD CURRENT : IF (A)
Tj = 150°C
1
0.1
Tj = 125°C
Tj = 75°C
0.01
Tj = 25°C
Tj = -25°C
0.001
10000
100
Tj = 75°C
10
Tj = 25°C
1
0.1
Tj = -25°C
0.01
0
200
400
600
800
1000 1200
0
FORWARD VOLTAGE : VF(mV)
VF-IF CHARACTERISTICS
20
40
60
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
660
1000
Tj = 25°C
f = 1MHz
FORWARD VOLTAGE : VF (mV)
CAPACITANCE BETWEEN
TERMINALS : Ct (pF)
Tj = 125°C
1000
100
10
Tj=25°C
IF=3.0A
n=30pcs
650
640
630
620
Ave. : 599.1mV
610
600
590
580
0
5
10
15
20
25
30
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
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VF DISPERSION MAP
2/5
2015.03 - Rev.A
Data Sheet
RBR3L60A
lElectrical Characteristic Curves
270
Tj=25°C
VR=60V
n=30pcs
50
45
40
35
30
Ave. : 23mA
25
260
255
250
240
235
15
230
IR DISPERSION MAP
Ct DISPERSION MAP
50
200
IFSM
1cyc
8.3ms
Ta=25°C
160
Ave. : 109.5A
120
100
80
60
REVERSE RECOVERY TIME : trr (ns)
PEAK SURGE
FORWARD CURRENT : IFSM (A)
220
140
Ave. : 245pF
245
20
180
Tj=25°C
f=1MHz
VR=0V
n=10pcs
265
CAPACITANCE BETWEEN
TERMINALS : Ct (pF)
REVERSE CURRENT : IR (mA)
55
Tj=25°C
IF=0.1A
IR=0.1A
Irr / IR=0.1
n=10pcs
45
40
35
30
25
20
Ave. : 14.7ns
15
10
40
IFSM DISPERSION MAP
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trr DISPERSION MAP
3/5
2015.03 - Rev.A
Data Sheet
RBR3L60A
lElectrical Characteristic Curves
1000
IFSM
PEAK SURGE
FORWARD CURRENT : IFSM (A)
PEAK SURGE
FORWARD CURRENT : IFSM (A)
1000
8.3 8.3
ms ms
1cyc
Ta=25°C
100
1cyc
IFSM
time
Ta=25°C
100
10
10
1
10
1
100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
10
100
TIME : t (ms)
IFSM-t CHARACTERISTICS
5
3.0
Tj = 150°C
Tj = 150°C
2.5
REVERSE POWER
DISSIPATION : PR (W)
FORWARD POWER
DISSIPATION : PF (W)
4
D = 1/2
3
Sin(θ=180)
2
DC
1
2.0
1.5
Sin(θ=180)
D = 1/2
1.0
DC
0.5
0
0.0
0
1
2
3
4
5
6
0
AVERAGE RECTIFIED
FORWARD CURRENT : Io (A)
Io-PF CHARACTERISTICS
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10
20
30
40
50
60
REVERSE VOLTAGE : VR (V)
VR-PR CHARACTERISTICS
4/5
2015.03 - Rev.A
Data Sheet
RBR3L60A
lElectrical Characteristic Curves
9
Rth(j-a)
100
Rth(j-c)
10
Glass epoxy board mounted
IM=100mA
Glass epoxy board mounted
8
IF=2A
1
time
AVERAGE RECTIFIED
FORWARD CURRENT : Io (A)
TRANSIENT
THERMAL IMPEDANCE : Rth (°C/W)
1000
IO
0A
0V
7
VR
6
T
5
4
0.01
0.1
1
10
D=t/T
VR=VRM/2
Tj=150°C
DC
3
Sin(θ=180)
2
1
1ms 300ms
0.1
0.001
t
D = 1/2
100
0
1000
0
TIME : t (s)
Rth-t CHARACTERISTICS
25
50
75
100
125
150
AMBIENT TEMPERATURE : Ta (°C)
DERATING CURVE (Io-Ta)
Glass epoxy board mounted
30
IO
0A
0V
8
25
t
VR
7
D=t/T
VR=VRM/2
Tj=150°C
T
6
ELECTROSTATIC
DISCHARGE TEST : ESD (kV)
AVERAGE RECTIFIED
FORWARD CURRENT : Io (A)
9
DC
20
5
15
D = 1/2
4
3
10
2
Sin(θ=180)
5
Ave. : 1.6kV
Ave. : 2.4kV
1
0
0
0
25
50
75
100
125
150
C=200pF
R=0W
CASE TEMPERATURE : Tc (°C)
DERATING CURVE (Io-Tc)
C=100pF
R=1.5kW
ESD DISPERSION MAP
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5/5
2015.03 - Rev.A
Notice
Notes
1) The information contained herein is subject to change without notice.
2) Before you use our Products, please contact our sales representative and verify the latest specifications :
3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no
responsibility for any damages arising out of the use of our Poducts beyond the rating specified by
ROHM.
4) Examples of application circuits, circuit constants and any other information contained herein are
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
5) The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,
any license to use or exercise intellectual property or other rights held by ROHM or any other
parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of
such technical information.
6) The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communication, consumer systems, gaming/entertainment sets) as well as the applications indicated in
this document.
7) The Products specified in this document are not designed to be radiation tolerant.
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equipment, nuclear power control systems, and submarine repeaters.
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the recommended usage conditions and specifications contained herein.
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information.
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R1102A