RBR3MM40B : Diode

Schottky Barrier Diode
Data Sheet
RBR3MM40B
lApplication
lDimensions (Unit : mm)
General rectification
lLand Size Figure (Unit : mm)
0.1±0.1
0.05
1.2
0.85
1.6±0.1
3.05
lFeatures
(PMDU)
3.5±0.2
2.6±0.1
1) Small power mold type
PMDU
2) High reliability
Cathode
3) Low VF
lStructure
0.9±0.1
0.8±0.1
Anode
lTaping Dimensions (Unit : mm)
Silicon epitaxial planar type
φf 1.55±0.05
2.0±0.05
0.25±0.05
1.81±0.1
4.0±0.1
8.0±0.2
3.5±0.05
4.0±0.1
1.75±0.1
lConstruction
3.71±0.1
ROHM : PMDU
JEDEC : SOD-123FL
: Manufacture Date
f 1.0±0.1
φ
1.5MAX
lAbsolute Maximum Ratings (Tc= 25°C)
Parameter
Symbol
Conditions
Limits
Unit
Repetitive peak reverse voltage
VRM
Duty≦0.5
40
V
Reverse voltage
VR
Direct reverse voltage
40
V
Average forward rectified current
Io
Glass epoxy board mounted, 60Hz half sin wave,
3
A
30
A
Non-repetitive forward current surge peak
IFSM
resistive load , Tc=45ºC Max.
60Hz half sin wave, one cycle,
non-repetitive at Ta=25ºC
Tj
-
150
°C
Tstg
-
-55 to +150
°C
Operating junction temperature
Storage temperature
lElectrical Characteristics (Tj= 25°C)
Parameter
Symbol
Conditions
Min.
Forward voltage
VF
IF=3.0A
-
-
0.58
V
Reverse current
IR
VR=40V
-
-
100
mA
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1/5
Typ. Max. Unit
2015.07 - Rev.A
Data Sheet
RBR3MM40B
lElectrical Characteristic Curves
100000
10
REVERSE CURRENT : IR (mA)
FORWARD CURRENT : IF (A)
Tj = 150°C
Tj = 150°C
1
0.1
Tj = 125°C
Tj = 75°C
0.01
Tj = 25°C
10000
Tj = 125°C
1000
100
Tj = 75°C
10
Tj = 25°C
1
0.1
Tj = -25°C
Tj = -25°C
0.01
0.001
0
200
400
600
0
800
FORWARD VOLTAGE : VF(mV)
VF-IF CHARACTERISTICS
30
40
30
Tj=25°C
IF=3.0A
n=30pcs
540
530
520
Ave. : 500mV
500
490
480
470
460
REVERSE CURRENT : IR (mA)
FORWARD VOLTAGE : VF (mV)
20
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
550
510
10
450
Tj=25°C
VR=40V
n=30pcs
25
20
15
Ave. : 11.9mA
10
5
0
VF DISPERSION MAP
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IR DISPERSION MAP
2/5
2015.07 - Rev.A
Data Sheet
RBR3MM40B
lElectrical Characteristic Curves
370
Tj = 25°C
f = 1MHz
CAPACITANCE BETWEEN
TERMINALS : Ct (pF)
CAPACITANCE BETWEEN
TERMINALS : Ct (pF)
1000
100
10
360
350
340
330
5
10
15
20
25
30
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
Ct DISPERSION MAP
40
180
IFSM
140
1cyc
8.3ms
Ta=25°C
120
Ave. : 85A
100
80
60
40
20
REVERSE RECOVERY TIME : trr (ns)
200
PEAK SURGE
FORWARD CURRENT : IFSM (A)
Ave. : 345pF
320
0
160
Tj=25°C
f=1MHz
VR=0V
n=10pcs
Tj=25°C
IF=0.5A
IR=1.0A
Irr / IR=0.25
n=10pcs
35
30
25
20
15
Ave. : 9.4ns
10
5
0
0
IFSM DISPERSION MAP
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trr DISPERSION MAP
3/5
2015.07 - Rev.A
Data Sheet
RBR3MM40B
lElectrical Characteristic Curves
200
IFSM
PEAK SURGE
FORWARD CURRENT : IFSM (A)
PEAK SURGE
FORWARD CURRENT : IFSM (A)
200
8.3 8.3
ms ms
150
1cyc
Ta=25°C
100
50
0
180
time
140
Ta=25°C
120
100
80
60
40
20
0
1
10
100
1
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
10
100
TIME : t (ms)
IFSM-t CHARACTERISTICS
4
1000
Tj = 150°C
3.5
Rth(j-a)
100
Rth(j-c)
10
Glass epoxy board mounted
IM=100mA
IF=3.0A
1
FORWARD POWER
DISSIPATION : PF (W)
TRANSIENT
THERMAL IMPEDANCE : Rth (°C/W)
1cyc
IFSM
160
time
3
D = 1/2
2.5
2
Sin(θ=180)
1.5
1
DC
0.5
1ms 300ms
0.1
0.001
0
0.01
0.1
1
10
100
1000
0
2
3
4
5
AVERAGE RECTIFIED
FORWARD CURRENT : Io (A)
Io-PF CHARACTERISTICS
TIME : t (s)
Rth-t CHARACTERISTICS
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1
4/5
2015.07 - Rev.A
Data Sheet
RBR3MM40B
lElectrical Characteristic Curves
1.6
8
Tj = 150°C
Glass epoxy board mounted
AVERAGE RECTIFIED
FORWARD CURRENT : Io (A)
REVERSE POWER
DISSIPATION : PR (W)
1.4
1.2
1
0.8
Sin(θ=180)
D = 1/2
0.6
0.4
DC
0.2
0
7
IO
0A
0V
6
VR
t
T
5
DC
4
D=t/T
VR=VRM/2
Tj=150°C
D = 1/2
3
Sin(θ=180)
2
1
0
0
10
20
30
40
0
25
50
75
100
125
150
AMBIENT TEMPERATURE : Ta (°C)
DERATING CURVE (Io-Ta)
REVERSE VOLTAGE : VR (V)
VR-PR CHARACTERISTICS
Glass epoxy board mounted
AVERAGE RECTIFIED
FORWARD CURRENT : Io (A)
8
IO
0A
0V
7
VR
t
T
6
DC
D=t/T
VR=VRM/2
Tj=150°C
5
D = 1/2
4
3
2
Sin(θ=180)
1
0
0
25
50
75
100
125
150
CASE TEMPERATURE : Tc (°C)
DERATING CURVE (Io-Tc)
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© 2015 ROHM Co., Ltd. All rights reserved.
5/5
2015.07 - Rev.A
Notice
Notes
1) The information contained herein is subject to change without notice.
2) Before you use our Products, please contact our sales representative and verify the latest specifications :
3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no
responsibility for any damages arising out of the use of our Poducts beyond the rating specified by
ROHM.
4) Examples of application circuits, circuit constants and any other information contained herein are
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
5) The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,
any license to use or exercise intellectual property or other rights held by ROHM or any other
parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of
such technical information.
6) The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communication, consumer systems, gaming/entertainment sets) as well as the applications indicated in
this document.
7) The Products specified in this document are not designed to be radiation tolerant.
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below), please contact and consult with a ROHM representative : transportation equipment (i.e.
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equipment, medical systems, servers, solar cells, and power transmission systems.
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the recommended usage conditions and specifications contained herein.
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shall have no responsibility for any damages arising from any inaccuracy or misprint of such
information.
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R1102A