2SB1260 / 2SB1181 / 2SB1241 Transistors Power Transistor (−80V, −1A) 2SB1260 / 2SB1181 / 2SB1241 !External dimensions (Units : mm) 2SB1260 2SB1181 0.5±0.1 0.4±0.1 1.5±0.1 0.55±0.1 2.3±0.2 0.4±0.1 1.5±0.1 2.3±0.2 1.0±0.2 (1) (2) (3) Abbreviated symbol: BH ROHM : MPT3 EIAJ : SC-62 ∗ (1) Base (2) Collector (3) Emitter ROHM : CPT3 EIAJ : SC-63 2.5±0.2 0.65Max. 0.5±0.1 (1) (2) 4.4±0.2 14.5±0.5 1.0 0.9 6.8±0.2 (3) 2.54 2.54 1.05 0.45±0.1 (1) Emitter (2) Collector (3) Base ROHM : ATV * Denotes hFE !Absolute maximum ratings (Ta=25°C) Symbol Limits Unit Collector-base voltage VCBO -80 V Collector-emitter voltage VCEO -80 V Emitter-base voltage VEBO -5 V 2SB1260 Collector power dissipation 2SB1241, 2SB1181 IC -1 A(DC) ICP -2 A(Pulse) *1 0.5 2 PC W *2 *3 1 10 W(Tc=25˚C) Junction temperature Tj 150 ˚C Storage temperature Tstg -55~+150 ˚C 2SB1181 *1 Single pulse, Pw=100ms *2 When mounted on a 40×40×0.7 mm ceramic board. *3 Printed circuit board, 1.7mm thick, collector copper plating 100mm2 or larger. (1) Base (2) Collector (3) Emitter 9.5±0.5 1.5 0.9 0.4+0.1 −0.05 2SB1241 Collector current 0.9 5.5+0.3 −0.1 4.0 ±0.3 2.5+0.2 −0.1 (3) 0.5±0.1 0.65±0.1 0.75 (2) 2.3+0.2 −0.1 2.5 1.5 +0.2 −0.1 C0.5 3.0±0.2 !Structure Epitaxial planar type PNP silicon transistor Parameter 6.5±0.2 5.1+0.2 −0.1 1.5±0.3 0.5±0.1 4.5+0.2 −0.1 1.6±0.1 (1) 1.0±0.2 !Features 1) High breakdown voltage and high current. BVCEO= −80V, IC=−1A 2) Good hFE linearity. 3) Low VCE(sat). 4) Complements the 2SD1898 / 2SD1863 / 2SD1733. 2SB1260 / 2SB1181 / 2SB1241 Transistors !Electrical characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Collector-base breakdown voltage Parameter BVCBO -80 - - V IC=-50µA Collector-emitter breakdown voltage BVCEO -80 - - V IC=-1mA Emitter-base breakdown voltage BVEBO -5 - - V IE=-50µA ICBO - - -1 µA VCB=-60V IEBO - - -1 µA VEB=-4V VCE(sat) - - -0.4 V IC/IB=-500mA/-50mA 82 - 390 - 120 - 390 - Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio 2SB1260, 2SB1181 hFE 2SB1241 Transition frequency 2SB1260, 2SB1241 fT 2SB1181 Output capacitance Cob Conditions VCE=-3V, IC=-0.1A - 100 - MHz VCE=-5V, IE=50mA, f=30MHz - 100 - MHz VCE=-10V, IE=50mA, f=30MHz - 25 - pF VCB=-10V, IE=0A, f=1MHz !Packaging specifications and hFE Package Taping Code Basic ordering unit (pieces) TL TV2 T100 2500 2500 1000 - Type hFE 2SB1260 PQR - 2SB1241 QR - 2SB1181 PQR - - hFE values are classified as follows : Item P Q R hFE 82~180 120~270 180~390 Ta=25˚C VCE=-5V -100 -10 -1 -0.1 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 BASE TO EMITTER VOLTAGE : VBE (V) Fig.1 Grounded emitter propagation characteristics Ta=25˚C 1000 -0.45mA 500 Ta=25˚C -1.0 -0.8 -0.4mA -0.35mA -0.6 -0.3mA -0.25mA -0.4 -0.2mA -0.15mA -0.2 -0.1mA -0.05mA IB=0mA 0 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 -2.0 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.2 Grounded emitter output characteristics DC CURRENT GAIN : hFE COLLECTOR CURRENT : IC (mA) -1000 COLLECTOR CURRENT : IC (mA) !Electrical characteristic curves 200 VCE=-3V 100 -1V 50 20 10 -1 -2 -5 -10 -20 -50-100 -200-500-1000-2000 COLLECTOR CURRENT : IC (mA) Fig.3 DC current gain vs. collector current 2SB1260 / 2SB1181 / 2SB1241 -2 -1 -0.5 -0.2 IC/IB=20 10 -0.05 -0.02 -0.01 -1 -2 200 100 50 20 10 5 2 1 1 -5 -10 -20 -50-100-200-500-1000-2000 2 5 COLLECTOR CURRENT : IC (mA) -50 -100 COLLECTOR TO EMITTER VOLTAGE : VCE (V) -0.5 -1 -2 -5 -10 -20 -0.1 -50 -100 Fig.6 Collector output capacitance vs. collector-base voltage Ta=25˚C Single nonrepetitive pulse * 5 2 1 500m IC Max. (Pulse) DC 200m s -0.02 Fig.10 Safe operating area (2SB1181) 1 -0.1 -0.2 m s 0m 0 =1 -0.1 -0.05 -5 -10 -20 2 s PW -0.2 -2 5 00 -1 -0.01 -0.1 -0.2 -0.5 -1 10 0m * -0.5 20 =1 Ta=25˚C Single nonrepetitive pulse -2 50 =1 PW Fig. 7 Emitter input capacitance vs. emitter-base voltage -5 100 PW -10 -0.2 s -5 -2 -0.5 ms -1 -1 IC Max. m -0.5 * 0 =1 20 Ta=25˚C Single nonrepetitive pulse IC Max. (Pulse) 00 50 10 -0.1 -0.2 200 10 -2 =1 PW 100 Ta=25˚C f=1MHz IE=0A 500 COLLECTOR TO BASE VOLTAGE : VCB (V) Gain bandwidth product vs. emitter current PW 200 EMITTER TO BASE VOLTAGE : VEB (V) COLLECTOR CURRENT : IC (A) Fig.5 COLLECTOR CURRENT : IC (A) Ta=25˚C f=1MHz IC=0A 500 1000 EMITTER CURRENT : IE (mA) Collector-emitter saturation voltage vs. collector current 1000 50 100 200 500 1000 DC EMITTER INPUT CAPACITANCE : Cib (pF) Fig.4 10 20 COLLECTOR CURRENT : IC (A) -0.1 Ta=25˚C VCE=-5V 500 COLLECTOR OUTPUT CAPACITANCE : Cob (pF) 1000 Ta=25˚C TRANSITION FREQUENCY : fT (MHz) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) Transistors 100m 50m 20m 10m 5m *Printed circuit board: 1.7 mm thick with collector -0.05 -0.5 -1 -2 -5 -10 -20 -50 -100 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig. 8 Safe operating area (2SB1260) 2m 2 1m copper plating at least 1 cm . 0.1 0.2 0.5 1 2 5 10 20 50 100200 5001000 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.9 Safe operating area (2SB1241)