2SD2211 / 2SD1918 / 2SD1857A Transistors Power Transistor (160V , 1.5A) 2SD2211 / 2SD1918 / 2SD1857A !External dimensions (Units : mm) 2SD2211 4.0 1.0 1.5 0.4 2.5 0.5 (1) 1.6 0.5 3.0 (2) 4.5 !Features 1) High breakdown voltage.(BVCEO = 160V) 2) Low collector output capacitance. (Typ. 20pF at VCB = 10V) 3) High transition frequency.(fT = 80MHZ) 4) Complements the 2SB1275 / 2SB1236A. 1.5 1.5 0.4 (3) (1) Base(Gate) (2) Collector(Drain) (3) Emitter(Source) 0.4 ROHM : MPT3 EIAJ : SC-62 !Absolute maximum ratings (Ta = 25°C) Symbol Limits Unit VCBO VCEO 160 160 V V VEBO 5 1.5 V A(DC) 3 A(Pulse) ∗1 1 W ∗2 W ∗3 2SD1918 1 10 W(Tc=25°C) Junction temperature Tj 150 °C Storage temperature Tstg −55 ∼+150 °C 0.75 0.9 5.1 6.5 2.3 0.9 0.8Min. C0.5 0.5 2 PC 1.5 1.5 2.3 2SD2211 5.5 0.65 2SD1857A Collector power dissipation (3) (2) (1) IC 2.3 Collector current 2SD1918 1.0 0.5 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage 2.5 9.5 (1) Base(Gate) (2) Collector(Drain) (3) Emitter(Source) ROHM : CPT3 EIAJ : SC-63 ∗ 1 Single pulse Pw=100ms ∗ 2 Printed circuit board 1.7mm thick, collector plating 1cm2 or larger. ∗ 3 When mounted on a 40 x 40 x 0.7mm ceramic board. 2SD1857A 6.8 1.0 0.65Max. Type 2SD2211 Package hFE Marking MPT3 QR DQ* Code Basic ordering unit (pieces) 2SD1918 2SD1857A CPT3 Q ATV PQ − TL 2500 − TV2 2500 T100 1000 0.5 (1) (2) (3) 2.54 2.54 1.05 ROHM : ATV !Electrical characteristics (Ta = 25°C) Symbol Min. Typ. Max. Unit Collector-base breakdown voltage BVCBO 160 − − V IC = 50µA Collector-emitter breakdown voltage BVCEO 160 − − V IC = 1mA Emitter-base breakdown voltage BVEBO 5 − − V IE = 50µA Collector cutoff current ICBO − − 1 µA VCB = 120V Emitter cutoff current IEBO − − 1 µA VEB = 4V Collector-emitter saturation voltage VCE(sat) − − 2 V IC/IB = 1A/0.1A ∗ Base-emitter saturation voltage VBE(sat) − − 1.5 V IC/IB = 1A/0.1A ∗ 120 − 390 − DC current 2SD2211,2SD1918 transfer ratio 2SD1857A hFE 82 − 270 − Transition frequency fT − 80 − MHz Output capacitance Cob − 20 − pF ∗ Measured using pulse current. 0.45 Taping specifications * Denotes hFE Parameter 4.4 !Packaging specifications and hFE 14.5 0.9 2.5 Conditions VCE/IC = 5V/0.1A VCE = 5V , IE = −0.1A , f = 30MHz VCB = 10V , IE = 0A , f = 1MHz (1) Emitter (2) Collector (3) Base