2SB1412 PNP Silicon Low Frequency Transistor Elektronische Bauelemente RoHS Compliant Product Features 1)Low VCE(sat). D-Pack 2)Excellent DC current gain characteristics 3)Complements the 2SD2118 6.6 5.3 0.2 2.3 0.2 0.1 0.5 0.1 0.1 VCEO −20 V Emitter-base voltage VEBO −6 V −5 IC 2SB1386 Collector power dissipation 2SB1412 A(DC) −10 0.2 Collector current 0.2 Collector-emitter voltage W 2 W 1 W 10 W(TC=25°C) 2SB1326 0.8 A(Pulse) ∗1 0.5 PC 1 W Junction temperature Tj 150 °C Storage temperature Tstg −55~+150 °C 7.0 V 5.6 Unit −30 0.7 ∗2 0.1 0.6 0.3 0.1 0.3 Limits VCBO 2.3 2.5 Symbol 1.0 Parameter Collector-base voltage 0.2 !Absolute maximum ratings (Ta=25°C) 1.2 0.3 0.1 1.5Max ∗3 ∗1 Single pulse, Pw=10ms ∗2 When mounted on a 40×40×0.7 mm ceramic board. ∗3 Printed circuit board glass epoxy board 1.6 mm thick with copper plating 100mm2 or larger. !Electrical characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Collector-base breakdown voltage BVCBO −30 − − V IC=−50µA Collector-emitter breakdown voltage BVCEO −20 − − V IC=−1mA Emitter-base breakdown voltage Parameter Conditions BVEBO −6 − − V IE=−50µA Collector cutoff current ICBO − − −0.5 µA VCB=−20V Emitter cutoff current IEBO − − −0.5 µA VEB=−5V − − −1.0 V IC/IB=−4A/−0.1A 82 − 390 − Collector-emitter saturation voltage VCE(sat) 2SB1386,2SB1412 DC current transfer ratio hFE 120 − 390 − Transition frequency fT − 120 − MHz Output capacitance Cob − 60 − pF 2SB1326 ∗ ∗ VCE=−2V, IC=−0.5A ∗ VCE=−6V, IE=50mA, f=30MHz VCB=−20V, IE=0A, f=1MHz ∗Measured using pulse current. !Packaging specifications and hFE Package Taping Code T100 TL TV2 Basic ordering unit (pieces) 1000 2500 2500 − − Type hFE 2SB1386 PQR 2SB1412 PQR − 2SB1326 QR − http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A − − Any changing of specification will not be informed individual Page 1 of 3 2SB1412 PNP Silicon Low Frequency Transistor Elektronische Bauelemente !Electrical characteristic curves -200m -100m -50m -20m -10m -5m -2m -1m -4 −15mA -3 −10mA -2 −5mA -1 0 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 BASE TO EMITTER VOLTAGE : VBE (V) DC CURRENT GAIN : hFE 1k 500 200 Ta=100°C 25°C −25°C 100 50 20 -1.6 VCE=−2V 1k 200 100 50 Ta=100°C 25°C −25°C 20 -1m-2m -5m-0.01-0.02-0.05-0.1 -0.2 -0.5 -1 -2 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.4 DC current gain vs. collector current (ΙΙ) Fig.5 DC current gain vs. collector current (ΙΙΙ) -2 -1 -0.5 -0.2 -0.1 -0.05 -0.02 Ta=100°C 25°C −25°C -0.01 -2m -5m -0.01-0.02-0.05 -0.1 -0.2 -0.5 -1 -2 -5 -10 COLLECTOR CURRENT : IC (A) Fig.7 Collector-emitter saturation voltage vs. collector current (ΙΙ) http://www.SeCoSGmbH.com 20 5 -1m -2m -5m-0.01-0.02 -0.05 -0.1 -0.2 -0.5 -1 -2 -2.0 500 5 lC/lB=10 50 Fig.3 DC current gain vs. collector current (Ι) 10 -5 −2V −1V 100 Fig.2 Grounded emitter output characteristics 5 -5 -10 VCE=−5V 200 COLLECTOR CURRENT : IC (A) 10 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) DC CURRENT GAIN : hFE -1.2 2k -1m-2m -5m-0.01-0.02-0.05 -0.1 -0.2 -0.5 -1 -2 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) -0.8 5k VCE=−1V 2k 01-Jun-2002 Rev. A -0.4 1k 500 10 IB=0A 0 Ta=25°C 2k COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.1 Grounded emitter propagation characteristics 5k 5k -5 -5 -10 Ta=100°C 25°C -0.2 -0.1 −25°C -0.05 -0.02 -0.01 -2m -5m -0.01-0.02 -0.05 -0.1 -0.2 -0.5 -1 -2 Ta=25°C -2 -1 -0.5 -0.2 -0.1 IC/IB=50/1 40/1 /1 30/1 10/1 -0.05 -0.02 -0.01 -2m -5m -0.01-0.02-0.05 -0.1 -0.2 -0.5 -1 -2 -5 -10 Fig.6 Collector-emitter saturation voltage vs. collector current (Ι) -2 -1 -5 -5 -10 COLLECTOR CURRENT : IC (A) lC/lB=30 -0.5 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) Ta=100°C 25°C −25°C Ta=25°C mA −30 A −25m −20mA -5 -10 COLLECTOR CURRENT : IC (A) Fig.8 Collector-emitter saturation voltage vs. collector current (ΙΙΙ) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) -2 -1 -500m −50mA −45mA −40mA −35mA DC CURRENT GAIN : hFE -5 -10 VCE=−2V -5 -5 lC/lB=40 -2 −25°C -1 25°C -0.5 -0.2 -0.1 -0.05 Ta=100°C -0.02 -0.01 -2m -5m -0.01-0.02 -0.05 -0.1 -0.2 -0.5 -1 -2 -5 -10 COLLECTOR CURRENT : IC (A) Fig.9 Collector-emitter saturation voltage vs. collector current (IV) Any changing of specification will not be informed individual Page 2 of 3 2SB1412 1 000 lC/lB=50 TRANSEITION FREQUENCY : fT (MHz) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) -5 −25°C 25°C Ta=100°C -2 -1 -0.5 -0.2 -0.1 -0.05 -0.02 200 100 50 20 10 5 2 1 1 -0.01 -2m -5m -0.01-0.02 -0.05 -0.1 -0.2 -0.5 -1 -2 Ta=25°C VCE=−6V 500 -5 -10 COLLECTOR CURRENT : IC (A) Fig.11 Gain bandwidth product vs. emitter current EMITTER INTPUT CAPACITANCE : Cib (pF) COLLECTOR CURRENT : IC (A) -10 EMITTER TO BASE VOLTAGE : VEB (V) Fig.13 Emitter input capacitance vs. emitter-base voltage http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A 20 10 -0.1 -0.2 -0.5 -1 -2 -5 -10 -20 -50 COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.12 Collector output capacitance vs. collector-base voltage 1 500m ms -5 50 ms -2 100 0 =1 -1 200 Pw -0.5 2 DC -0.2 5 00 20 Ta=25°C f=1MHz IE=0A 500 10 =1 50 20 Pw 100 1000 Ta=25°C ∗Single nonrepetitive pulse 50 200 10 -0.1 50 100 200 500 1000 100 Ta=25°C f=1MHz IC=0A 500 10 20 5 EMITTER CURRENT : IE (mA) Fig.10 Collector-emitter saturation voltage vs. collector current (V) 1000 2 COLLECTOR OUTPUT CAPACITANCE : Cob (pF) PNP Silicon Low Frequency Transistor Elektroni sche Bauelemente 200m 100m 50m 20m 10m 0.2 0.5 1 2 5 10 20 50 100 200 500 COLLECTOR TO EMITTER VOLTAGE : −VCE (V) Fig.14 Safe operation area (2SB1412) Any changing of specification will not be informed individual Page 3 of 3