IMB7A Transistors General purpose (dual digital transistors) IMB7A !Features 1) Two DTA143T chips in a SMT package. !External dimensions (Units : mm) (1) (2) (3) R1 0.95 0.95 1.9 2.9 (6) (4) (5) 0.3 !Circuit diagram 1.6 R1 ROHM : SMT6 EIAJ : SC-74 !Absolute maximum ratings (Ta = 25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol Limits Unit VCBO VCEO −50 −50 V V VEBO IC −5 −100 V mA Pc Tj Tstg 300(TOTAL) 150 −55~+150 mW °C °C ∗ ∗ 200mW per element must not be exceeded. !Package, marking, and packaging specifications Type IMB7A Package Marking Code Basic ordering unit (pieces) SMT6 B7 T110 3000 !Electrical characteristics (Ta = 25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector-emitter saturation voltage Input resistance Symbol Min. Typ. Max. Unit BVCBO BVCEO −50 −50 −5 − − 100 − 3.29 − − − − − 250 − 4.7 − − − −0.5 −0.5 600 −0.3 6.11 V V V µA µA − V kΩ BVEBO ICBO IEBO hFE VCE(sat) R1 Conditions IC=−50µA IC=−1mA IE=−50µA VCB=−50V VEB=−4V VCE/IC=−5V/−1mA IC/IB=−5mA /−0.25mA − 0to0.1 0.3to0.6 1.1 0.8 0.15 2.8 Each lead has same dimensions