FMS3 / FMS4 / IMT4 Transistors General purpose (dual transistors) FMS3 / FMS4 / IMT4 !External dimensions (Units : mm) !Features 1) Two 2SA1514K chips in an AMT package. 2) High breakdown voltage. V mA Power dissipation Junction temperature Pc Tj 300 (TOTAL) 150 mW ˚C Storage temperature Tstg −55∼+150 ˚C 0.3to0.6 ROHM : SMT5 EIAJ : SC-74A ∗ 1.1 −5 −50 Each lead has same dimensions (5) (1) (4) 0.3 FMS4 2.9 VEBO IC 0.8 Emitter-base voltage Collector current (3) V V 0.95 0.95 1.9 −120 −120 ∗200mW per element must not be exceeded. 2.9 (3) (4) Unit VCBO VCEO 0to0.1 Limits Collector-base voltage Collector-emitter voltage (2) Symbol 1.6 2.8 0.15 Parameter (5) (1) !Absolute maximum ratings (Ta=25°C) 0.95 0.95 1.9 (2) 0.3 FMS3 1.6 !Package, marking, and Packaging specifications 3000 3000 0.3to0.6 ROHM : SMT5 EIAJ : SC-74A (5) 0.3 IMT4 FMS3 FMS4 Each lead has same dimensions (3) (4) !Circuit diagram 1.1 3000 Marking Code Basic ordering unit (pieces) (1) SMT6 T4 T108 (2) IMT4 SMT5 S4 T148 0.95 0.95 1.9 FMS4 SMT5 S3 T148 0to0.1 FMS3 (6) Part No. Package 0.8 0.15 2.8 1.6 IMT4 0to0.1 0.3to0.6 ROHM : SMT6 EIAJ : SC-74 !Electrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit BVCBO BVCEO − − − − − − V V V IC=−50µA IC=−1mA Conditions VCB=−100V BVEBO −120 −120 −5 Collector cutoff current ICBO − − Emitter cutoff current IEBO − − −0.5 −0.5 µA µA hFE fT 180 − 820 − VCE=−6V, IC−2mA − − 140 − − −0.5 MHz V IC/IB=−10mA/−1mA Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage DC current transfer ratio Transition frequency Collector-emitter saturation voltage ∗Transition frequency of the device. VCE(sat) IE=−50µA VEB=−4V VCE=−12V, IE=2mA, f=100MHz ∗ 1.1 0.8 0.15 2.8 Each lead has same dimensions