EMZ8 / UMZ8N Transistors Power management (dual transistors) EMZ8 / UMZ8N !External dimensions (Units : mm) (5) (6) (5) 0.5 1.25 (6) 2.0 1.3 (3) (1) (6) (4) 0.65 UMZ8N (2) Tr1 0.65 (1) 0.2 Tr2 Each lead has same dimensions ROHM : EMT6 EIAJ : (4) (2) (1) (5) (3) (2) 1.2 1.6 0.13 !Equivalent circuits (3) (4) 0.5 0.5 1.0 1.6 EMZ8 0.22 !Feature 1) Both a 2SA2018 chip and 2SC2412K chip in a EMT or UMT package. ROHM : UMT6 EIAJ : SC-88 !Absolute maximum ratings (Ta = 25°C) Parameter Symbol Collector-base voltage Collector-emitter voltage VCBO VCEO Emitter-base voltage Collector current VEBO IC Collector power dissipation Junction temperature Storage temperature PC Tj Tstg ∗ 120mW per element must not be exceeded. Limits Tr1 −15 Tr2 60 −12 50 Unit V V −6 7 −150 150 150 (TOTAL) 150 mW °C −55~+150 °C V mA ∗ !Package, marking, and packaging specifications Part No. EMZ8 UMZ8N Package Marking Code Basic ordering unit (pieces) EMT6 Z2 UMT6 Z2 T2R TR 8000 3000 0to0.1 0.1Min. 0.7 0.15 2.1 Each lead has same dimensions EMZ8 / UMZ8N Transistors !Electrical characteristics (Ta=25°C) Tr1 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Symbol Min. Typ. Max. Unit BVCBO BVCEO −15 −12 −6 − − − − − − − − −0.1 V V V µA IC = −10µA IC = −1mA VCE(sat) − − − −0.1 −0.1 −0.25 µA V VEB = −6V IC/IB = −200mA/−10mA BVEBO ICBO IEBO Conditions IE = −10µA VCB = −15V VCE = −2V , IC = −10mA hFE 270 − 680 − fT Cob − − 260 6.5 − − MHz pF Symbol Min. Typ. Max. Unit BVCBO BVCEO 60 50 − − − − V V IC = 50µA IC = 1mA BVEBO 7 − − − − − − 0.1 0.1 V µA µA IE = 50µA VCB = 60V VEB = 7V VCE = −2V , IE = 10mA , f = 100MHz VCB = −10V , IE = 0A , f = 1MHz Tr2 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance ICBO IEBO − 120 − hFE − 0.4 560 V − fT − 180 − MHz Cob − 2 3.5 pF VCE(sat) Conditions IC/IB = 50mA/5mA VCE = 6V , IC = 1mA VCE = 12V , IE = −2mA , f = 100MHz VCB = 12V , IE = 0A , f = 1MHz