UMY4N / UMZ2N / FMY4A / IMZ2A Transistors Power management (dual transistors) UMY4N / UMZ2N / FMY4A / IMZ2A (1) (5) 1.3 (2) 0.2 (4) UMY4N (3) !External dimensions (Units : mm) 0.65 0.65 !Features 1) Both a 2SA1037AK chip and 2SC2412K chip in a UMT or SMT package. 1.25 !Absolute maximum ratings (Ta = 25°°C) 150 °C −55~+150 °C ∗1 ∗2 UMZ2N 0.9 1.3 mW Each lead has same dimensions (1) (6) per element must not be exceeded. ∗12 120mW ∗ 200mW per element must not be exceeded. V mA (3) 300 (TOTAL) V 0.65 Tj Tstg PC Storage temperature 50 −6 7 −150 150 150 (TOTAL) 0.1Min. ROHM : UMT5 EIAJ : SC-88A V (2) Junction temperature −50 Unit 1.25 0.65 VEBO IC Tr2 60 0to0.1 Emitter-base voltage Collector current Collector power UMY4N, UMZ2N dissipation FMY4A, IMZ2A Limits Tr1 −60 (4) VCBO VCEO (5) Symbol 0.2 Parameter Collector-base voltage Collector-emitter voltage 0.7 0.15 2.1 Part No. UMY4N UMZ2N FMY4A IMZ2A Package Marking Code Basic ordering unit (pieces) UMT5 Y4 UMT6 Z2 SMT5 Y4 SMT6 Z2 TR TR T148 T108 3000 3000 3000 3000 0to0.1 !Package, marking, and packaging specifications 0.7 0.15 2.1 0.1Min. ROHM : UMT6 EIAJ : SC-88 Each lead has same dimensions (3) (4) 1.6 2.8 0to0.1 FMY4A 0.8 0.15 0.3to0.6 Tr1 IMZ2A (1) (2) 0.95 0.95 1.9 2.9 Tr1 (3) 1.6 2.8 0.3to0.6 ROHM : SMT6 EIAJ : SC-74 1.1 Tr2 Each lead has same dimensions 0.8 Tr1 (6) Tr2 (5) IMZ2A (4) UMZ2N ROHM : SMT5 EIAJ : SC-74A 0.3 Tr2 0.15 Tr1 Tr2 0to0.1 UMY4N (5) (1) !Circuit diagrams 0.95 0.95 1.9 (2) 0.3 FMY4A Each lead has same dimensions UMY4N / UMZ2N / FMY4A / IMZ2A Transistors !Electrical characteristics (Ta=25°C) Tr1 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Symbol Min. Typ. Max. Unit BVCBO BVCEO −60 −50 −6 − − − − − − V V IC = −50µA IC = −1mA − − − − −0.1 V µA IE = −50µA VCB = −60V − − −0.1 −0.5 µA VCE(sat) V VEB = −6V IC/IB = −50mA/−5mA hFE 120 − 560 − VCE = −6V , IC = −1mA fT Cob − − 140 4 − 5 MHz pF Symbol Min. Typ. Max. Unit BVCBO BVCEO 60 50 − − − − V V IC = 50µA IC = 1mA BVEBO 7 − − − 0.1 V µA IE = 50µA VCB = 60V µA VEB = 7V BVEBO ICBO IEBO ∗ Transition frequency of the device. Conditions VCE = −12V , IE = 2mA , f = 100MHz VCB = −12V , IE = 0A , f = 1MHz ∗ Tr2 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance ∗ Transition frequency of the device. ICBO − − VCE(sat) − − hFE 120 − − fT − Cob − IEBO 0.1 0.4 560 V − 180 − MHz 2 3.5 pF Conditions IC/IB = 50mA/5mA VCE = 6V , IC = 1mA VCE = 12V , IE = −2mA , f = 100MHz VCB = 12V , IE = 0A , f = 1MHz ∗