EMA6 / UMA6N / FMA6A Transistors Emitter common (dual digital transistors) EMA6 / UMA6N / FMA6A zExternal dimensions (Units : mm) zFeatures 1) Two DTA114T chips in a EMT or UMT or SMT package. (2) (5) FMA6A (3) (4) (5) ROHM : EMT5 R1 (4) (5) (2) (1) Each lead has same dimensions UMA6N (3) R1 (4) R1 (1) (5) (2) 0.2 R1 1.3 (1) 2.0 (2) 1.25 zPackage, marking, and packaging specifications FMA6A Package EMT5 UMT5 SMT5 Marking A6 A6 A6 Code T2R TR T148 Basic ordering unit (pieces) 8000 3000 3000 0.7 UMA6N 0to0.1 EMA6 0.15 2.1 Type 0.9 (3) (1) 0.65 0.65 EMA6 / UMA6N 1.2 1.6 0.5 0.13 zEquivalent circuit (3) (4) 0.5 0.5 1.0 1.6 0.22 EMA6 0.1Min. ROHM : UMT5 EIAJ : SC-88A Each lead has same dimensions −50 V 1.6 Emitter-base voltage VEBO −5 V 2.8 −100 mA EMA6 / UMA6N FMA6A Pc 150(TOTAL) 300(TOTAL) mW Junction temperature Tj 150 °C Storage temperature Tstg −55~+150 °C ∗1 0.3to0.6 ∗2 0to0.1 Collector power dissipation 0.15 IC Collector current 2.9 VCEO 1.1 V Collector-emitter voltage 0.8 (3) (4) Unit −50 (5) Limits VCBO Parameter (1) Symbol Collector-base voltage 0.95 0.95 1.9 0.3 zAbsolute maximum ratings (Ta = 25°C) (2) FMA6A Each lead has same dimensions ROHM : SMT5 EIAJ : SC-74A ∗1 120mW per element must not be exceeded. ∗2 200mW per element must not be exceeded. zElectrical characteristics (Ta = 25°C) Symbol Min. Typ. Max. Unit Collector-base breakdown voltage Parameter BVCBO −50 − − V IC=−50µA Collector-emitter breakdown voltage BVCEO −50 − − V IC=−1mA Emitter-base breakdown voltage Collector cutoff current BVEBO ICBO −5 − − − − −0.5 V µA IE=−50µA VCB=−50V Emitter cutoff current Collector-emitter saturation voltage IEBO − − −0.5 µA VEB=−4V VCE(sat) − − −0.3 V IC/IB=−5mA/−0.5mA VCE/IC=−5V/−1mA hFE 100 250 600 − Transition frequency fT − 250 − MHz Input resistance R1 32.9 47 61.1 kΩ DC current transfer ratio ∗Transition frequency of the device. Conditions VEB=10V, IE=−5mA, f=100MHz − ∗