Infrared light emitting diode, side-view type SIM-22ST The SIM-22ST is a GaAs infrared light emitting diode housed in side emission. High output with 1.5 lens. 1.0 2.54 ± 0.1 Dimensions (Unit : mm) Applications Light source for sensors 1.9 Features 1) Compact package (4.7x4.6 mm) with lens. 2) High efficiency, high output. 3) Emission spectrum well suited to silicon detectors (P = 950 nm). 4) Good current-optical output linearity. 5) Long life, high reliability. Notes: 1. Tolerances are ± 0.2 unless otherwise indicated. 2. Value in parenthese is size at base of leads. Gate remainder 0.3Max. 4.1 0.15 R0.5 1.5 4.7 ± 0.1 R0.75 2.8 1.0 2−0.65 2−0.45 1 R0.5 12Min. 2-C0.7 1.8 ± 0.05 4.6 ± 0.1 0.40 2 0.64 (2.54) 1 Cathode 2 Anode Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Forward current IF 50 mA Reverse voltage VR 5 V Power dissipation PD 80 mW Pulse forward current IFP∗ 0.5 A Operating temperature Topr −25 to +85 °C Storage temperature Tstg −30 to +100 °C ∗ Pulse width = 0.1ms, duty ratio 1% Electrical and optical characteristics (Ta=25C) Symbol Min. Typ. Max. Unit Emitting strength IE − 0.8 − mW/sr IF=10mA Emitting strength IE 0.48 1.3 1.94 mA IF=10mA∗ Forward voltage VF − 1.3 1.6 V IF=50mA Reverse current IR − − 10 μA VR=5V Peak light emitting wavelength λP − 950 − nm IF=10mA Spectral line half width Δλ − 40 − nm IF=20mA Half-viewing angle θ1/2 − ±30 − deg IF=50mA Parameter Response time Cut-off frequency tr fc tf Conditions − 1.0 − μs IF=50mA − 1.0 − MHz IF=50mA ∗ According to our measurement procedures. www.rohm.com c 2010 ROHM Co., Ltd. All rights reserved. ○ 1/2 2010.06 - Rev.B SIM-22ST Data Sheet Electrical and optical characteristic curves 14 40 30 20 10 0 −20 0 20 40 60 80 50 −25°C 0°C 25°C 50°C 75°C 40 30 20 10 0 0 100 AMBIENT TEMPERATURE : Ta(°C) 0.4 1.2 12 10 8 6 4 2 0 0 1.6 10 20 30 40 50 FORWARD CURRENT : IF(mA) Fig.2 Forward current vs. forward voltage Fig.3 Emitting strength vs. forward current RELATIVE OPTICAL OUTPUT : PO (%) 100 200 100 50 20 10 0 25 50 75 100 AMBIENT TEMPERATURE : Ta (°C) 80 60 40 20 0 900 920 Fig.4 Relative emitting strength vs. ambient temperature 20° 10° 0° 80 50° 60 60° 40 70° 20 80° 40 20 RELATIVE EMITTING STRENGTH (%) 0 980 1000 100 40° 60 960 Fig.5 Wavelength 30° 80 940 OPTICAL WAVELENGTH : λ (nm) 0 10° 20° 30° 40° 50° 60° 70° 80° 90° RELATIVE EMITTING STRENGTH (%) −25 90° 100 0.8 FORWARD VOLTAGE : VF (V) Fig.1 Forward current falloff RELATIVE EMITTING STRENGTH : IE (%) 60 EMITTING STRENGTH I : IE (mW / Sr) 50 FORWARD CURRENT : IF (mA) FORWARD CURRENT : IF (mA) 70 ANGULAR DISPLACEMENT : θ (deg) Fig. 6 Directional pattern www.rohm.com c 2010 ROHM Co., Ltd. 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