Schottky barrier Diode RB530S-30 Applications General rectification Land size figure (Unit : mm) Dimensions (Unit : mm) 0.6 0.8 1.7 Features 1)Ultra small mold type. (EMD2) 2)Low IR 3)High reliability EMD2 Construction Silicon epitaxial planer Structure Taping specifications (Unit : mm) Absolute maximum ratings (Ta=25C) Parameter Symbol Reverse voltage (DC) VR Average rectified forward current Io Forward current surge peak (60Hz/1cyc) IFSM Junction temperature Tj Storage temperature Tstg Electical characteristics (Ta=25C) Parameter Forward voltage Reverse current www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. Symbol VF IR Limits 30 100 500 125 -40 to +125 Min. - 1/3 Typ. - Unit V mA mA C C Max. 0.45 0.5 Unit V μA Conditions IF=10mA VR=10V 2010.02 - Rev.A RB530S-30 Data Sheet Electical characteristics curves 100 1000000 1000 10 Ta=75C 1 Ta=-25C 0.1 Ta=25C 0.01 Ta=75C 10000 1000 Ta=25C 100 10 Ta=-25C 1 200 300 400 500 0 600 370 Ta=25C VF=10mA n=30pcs 1 30 0 5 350 340 AVE : 347.5mV 330 800 700 600 500 400 300 AVE : 108.3nA 200 19 17 16 15 AVE : 16.28pF 14 13 12 11 0 10 IR DISPERSION MAP Ct DISPERSION MAP 8.3ms 10 AVE : 4.20A 5 10 PEAK SURGE FORWARD CURRENT : I FSM(A) 1cyc Ifsm PEAK SURGE FORWARD CURRENT : I FSM(A) 10 15 Ifsm 8.3ms 8.3ms 1cyc 5 0 0 Ifsm t 5 0 1 10 100 1 10 100 TIME : t(ms) IFSM-t CHARACTERISTICS NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS IFSM DISRESION MAP 0.1 1000 0.02 DC 0.08 FORWARD POWER DISSIPATION : Pf(W) Rth(j-a) 100 Rth(j-c) 10 D=1/2 0.06 Sin(=180) 0.04 0.02 0.015 0.01 DC 0.005 Sin(=180) 1 0.001 20 Ta=25C f=1MHz VR=0V n=10pcs 18 100 VF DISPERSION MAP 20 15 20 Ta=25C VR=10V n=30pcs 900 320 10 REVERSE VOLTAGE : VR(V) VR-Ct CHARACTERISTICS 1000 REVERSE CURRENT : IR(nA) FORWARD VOLTAGE : V F(mV) 20 REVERSE VOLTAGE : VR(V) VR-IR CHARACTERISTICS FORWARD VOLTAGE : V F(mV) VF-IF CHARACTERISTICS 360 10 CAPACITANCE BETWEEN TERMINALS : Ct(pF) 100 REVERSE POWER DISSIPATION : PR (W) 0 PEAK SURGE FORWARD CURRENT : I FSM(A) 10 0.1 0.001 TRANSIENT THAERMAL IMPEDANCE : Rth (C/W) f=1MHz 100000 CAPACITANCE BETWEEN TERMINALS : Ct(pF) 100 REVERSE CURRENT : IR(nA) FORWARD CURRENT : I F(mA) Ta=125 Ta=125C D=1/2 0 0.01 0.1 1 10 100 1000 0 0.05 0.1 0.15 0.2 0 0 TIME : t(s) Rth-t CHARACTERISTICS www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. AVERAGE RECTIFIED FORWARD CURRENT : Io(A) Io-Pf CHARACTERISTICS 2/3 5 10 15 20 25 30 REVERSE VOLTAGE : VR(V) VR-PR CHARACTERISTICS 2010.02 - Rev.A RB530S-30 0.3 Io 0A 0V VR t DC 0.2 T D=t/T VR=15V Tj=125C D=1/2 0.1 Sin(=180) AVERAGE RECTIFIED FORWARD CURRENT : Io(A) AVERAGE RECTIFIED FORWARD CURRENT : Io(A) 0.3 Data Sheet Io 0A 0V VR t 0.2 T D=t/T VR=15V Tj=125C 100 125 DC D=1/2 0.1 Sin(=180) 0 0 0 25 50 75 100 125 AMBIENT TEMPERATURE : Ta(C) Derating Curve"(Io-Ta) www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 0 25 50 75 CASE TEMPARATURE : Tc(C) Derating Curve"(Io-Tc) 3/3 2010.02 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). 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