Phototransistor, top view type RPT-38PB3F The RPT-38PB3F is a silicon planar phototransistor. Since it is molded in plastic with a visible light filter, there is almost no effect from stray light. It is particularly suited for use with a ROHM SIR-34ST3F infrared light emitting diode. Dimensions (Units : mm) Application Optical control equipment Receiver for sensors Notes: 1. Unspecified tolerance shall be ±0.2 . 2. Dimension in parenthesis are show for reference. +0.1 −0.3 1.1 Features 1) High sensitivity. 2) Almost no effect from stray light. Min.24 0.5 2 2.5±1 2− Max.1 4−0.6 5.2±0.3 φ3.4 φ3.1±0.2 1 Internal connection diagram (2.5) 1 Emitter 2 Collector Absolute maximum ratings (Ta = 25C) Symbol Limits Unit Collector-emitter voltage Parameter VCEO 32 V Emitter-collector voltage VECO 5 V IC 30 mA Collector current Collector power dissipation PC 150 mW Operating temperature Topr −25~+85 °C Storage temperature Tstg −30~+85 °C Electrical and optical characteristics (Ta = 25C) Parameter Symbol Min. Typ. Light current IC 2.0 Dark current ICEO − λP − Peak sensitivity wavelength Unit − − mA VCE=5V, E=500LX − 0.5 μA VCE=10V(Black box) 800 − nm VCE(sat) − − 0.4 V Half-angle θ1 / 2 − ±36 − deg Response time tr·tf − 10 − μs Collector-emitter saturation voltage www.rohm.com c 2010 ROHM Co., Ltd. All rights reserved. ○ Conditions Max. 1/2 − IC=1mA, E=500LX − VCC=5V, IC=1mA, RL=100Ω 2010.06 - Rev.A RPT-38PB3F Data Sheet Electrical and optical characteristic curves 8 1000 100 VCE=10V VCE=20V VCE=30V 10 1 0.1 −25 0 25 50 75 VCE=5V 500 LIGHT CURRENT : IC (mA) RELATIVE LIGHT CURRENT : IC (%) DARK CURRENT : ICEO (nA) 1000 200 100 50 20 6 4 2 10 −25 100 0 25 50 75 0 100 250 Fig.1 Dark current vs. ambient temperature 500 750 1000 1250 ILLUMINANCE : E (Lx) AMBIENT TEMPERATURE : Ta (°C) AMBIENT TEMPERATURE : Ta (°C) Fig.3 Light current vs. irradiance Fig.2 Relative output vs. ambient temperature COLLECTOR DISSIPATION : PC (mW) 100 8 E=1000Lux 6 750Lux 4 500Lux 2 250Lux 0 0 2 4 6 8 10 14 16 75 50 25 0 400 600 800 1000 1200 160 120 80 40 0 −25 1600 0 25 50 75 100 COLLECTOR−EMITTER VOLTAGE : VCE (V) OPTICAL WAVELENGTH : λ (nm) AMBIENT TEMPERATURE : Ta (°C) Fig.4 Output characteristics Fig.5 Spectral sensitivity Fig.6 Collector dissipation vs. ambient temperature Ta=25°C VCE=5V 20° 10° 0° 100 30° 80 40° 100 50° RL=1kΩ 60 60° RL=500Ω 10 40 70° RL=100Ω 20 80° 1 0.1 1 10 COLLECTOR CURRENT : IC (mA) 90° 100 80 60 40 20 RELATIVE LUMINOUS INTENSITY (%) Fig.7 Response time vs. collector current www.rohm.com c 2010 ROHM Co., Ltd. All rights reserved. ○ RELATIVE LUMINOUS INTENSITY (%) 1000 RESPONSE TIME : tr (μs) 12 RELATIVE SENSITIVITY : IC (%) LIGHT CURRENT : IC (mA) 10 0 10° 20° 30° 40° 50° 60° 70° 80° 90° ANGULAR DISPLACEMENT (deg) Fig.8 Directional pattern 2/2 2010.06 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. 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