BAV200 / 201 / 202 / 203 Switching Diode Features Silicon Epitaxial Planar Diodes Applications General purposes Mechanical Data Case:QuadroMELF Glass Case (SOD-80) Weight: approx. 34 mg Cathode Band Color: Black Absolute Maximum Ratings Parameter Test Condition Peak reverse voltage Reverse voltage ( Tamb=25oC unless otherwise specified ) Part Symbol Value Unit BAV200 VRRM 60 V BAV201 VRRM 120 V BAV202 VRRM 200 V BAV203 VRRM 250 V BAV200 VR 50 V V BAV201 VR 100 BAV202 VR 150 V BAV203 VR 200 V mA IF 250 Peak forward surge current Forward current tp= 1 s, Tj=25oC IFSM 1 A Forward peak current f=50Hz IFM 625 mA Thermal Characteristics Parameter Junction ambient ( Tamb=25oC unless otherwise specified ) Test Condition on PC board 50 mm X 50mm X 1.6mm Junction temperature Stroage temperature range Symbol Value Unit RthJA 500 K/W Tj 175 o C Tstg -65 to +175 o C Electrical Characteristics Parameter ( Tamb=25oC unless otherwise specified ) Test Condition Forward voltage IF=100mA Reverse current VR=50V Breakdown voltage Diode capacitance Part Symbol Min. Typ. Max. Unit VF 1 V BAV200 IR 100 nA VR=100V BAV201 IR 100 nA VR=150V BAV202 IR 100 nA VR=200V BAV203 IR 100 nA Tj=100oC, VR=50V BAV200 IR 15 uA Tj=100oC, VR=100V BAV201 IR 15 uA Tj=100oC, VR=150V BAV202 IR 15 uA Tj=100oC, VR=200V BAV203 IR 15 uA IR=100uA, tp/T=0.01, tp=0.3ms BAV200 V(BR) 60 IR=100uA, tp/T=0.01, tp=0.3ms BAV201 V(BR) 120 V IR=100uA, tp/T=0.01, tp=0.3ms BAV202 V(BR) 200 V IR=100uA, tp/T=0.01, tp=0.3ms BAV203 V(BR) 250 VR=0, f=1MHz V CD 1.5 5 Differential forward resistance IF=10mA rf Reverse recovery time IF=IR=30mA, iR=3mA, RL=100Ω trr 652 V pF Ω 50 ns Typical characteristics ( Tamb=25oC unless otherwise specified ) Package Dimensions in mm (inches) 653