SSF4031C1
Main Product Characteristics:
VDSS
-40V
RDS(on)
24mohm(typ.)
ID
-30A
TO-252
Marking and pin
Schematic diagram
Assignment
Features and Benefits:
Advanced MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
100%Avalanche Rated
Description:
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the
on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely
efficient and reliable device for use in power switching application and a wide variety of other applications
Absolute max Rating:
Symbol
Parameter
Max.
ID @ TC = 25℃
Continuous Drain Current, VGS @ 10V
-30①
ID @ TC = 100℃
Continuous Drain Current, VGS @ 10V
-20①
IDM
Pulsed Drain Current ②
-120
Power Dissipation ③
Units
A
83
W
Linear Derating Factor
1.02
W/℃
VDS
Drain-Source Voltage
-40
V
VGS
Gate-to-Source Voltage
± 20
V
EAS
Single Pulse Avalanche Energy @ L=0.3mH
93
mJ
IAS
Avalanche Current @ L=0.3mH
25
A
TJ
Operating Junction Temperature Range
TSTG
Storage Temperature Range
-55 to + 150
℃
PD @TC = 25℃
©Silikron Semiconductor CO., LTD.
2015.01.22
www.silikron.com
Preliminary Version: 1.0
page 1 of 6
SSF4031C1
Thermal Resistance
Symbol
Characterizes
RθJC
RθJA
Typ.
Max.
Units
Junction-to-case ③
—
1.5
℃/W
Junction-to-ambient (t ≤ 10s) ④
—
62
℃/W
Junction-to-Ambient (PCB mounted, steady-state) ④
—
40
℃/W
Electrical Characterizes @TA=25℃ unless otherwise specified
Symbol
Parameter
V(BR)DSS
Drain-to-Source breakdown voltage
RDS(on)
Static Drain-to-Source on-resistance
VGS(th)
Gate threshold voltage
IDSS
Drain-to-Source leakage current
IGSS
Gate-to-Source forward leakage
Qg
Min.
Typ.
Max.
Units
-40
—
—
V
—
24
32
—
33
45
-1
—
-3
—
—
-1
—
—
-50
—
—
100
—
—
-100
Total gate charge
—
26.2
—
Qgs
Gate-to-Source charge
—
7.2
—
Qgd
Gate-to-Drain("Miller") charge
—
8.4
—
VGS =- 10V
td(on)
Turn-on delay time
—
15.9
—
VGS=-10V, VDS =-20V,
tr
Rise time
—
49.0
—
td(off)
Turn-Off delay time
—
61.6
—
tf
Fall time
—
25.6
—
ID =-20A
Ciss
Input capacitance
—
1820
—
VGS = 0V
Coss
Output capacitance
—
248
—
Crss
Reverse transfer capacitance
—
162
—
mΩ
V
μA
nA
Conditions
VGS = 0V, ID =- 250μA
VGS=-10V,ID = -10A
VGS=-4.5V,ID = -6A
VDS = VGS, ID = -250μA
VDS = -40V,VGS = 0V
TJ = 125℃
VGS =20V
VGS = -20V
ID =- 10A,
nC
nS
pF
VDS=-20V,
RL=1Ω,
RGEN=3Ω
VDS =-25V
ƒ =1MHz
Source-Drain Ratings and Characteristics
Symbol
IS
ISM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Min.
Typ.
Max.
Units
—
—
-30①
A
—
—
-120
A
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
VSD
Diode Forward Voltage
—
-0.72
-1.2
V
IS=-2.1A, VGS=0V
trr
Reverse Recovery Time
—
30.8
—
nS
TJ = 25℃, IF =-20A, di/dt =
Qrr
Reverse Recovery Charge
—
31.1
—
nC
100A/μs
©Silikron Semiconductor CO.,LTD.
2015.01.22
www.silikron.com
Preliminary Version: 1.0
page 2 of 6
SSF4031C1
Test circuits and Waveforms
Switch Waveforms:
Notes:
①Calculated continuous current based on maximum allowable junction temperature. Package
limitation current is 75A.
②Repetitive rating; pulse width limited by max. junction temperature.
③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal
resistance.
④The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25℃.
⑤These curves are based on the junction-to-case thermal impedence which is measured with the
device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175℃.
©Silikron Semiconductor CO.,LTD.
2015.01.22
www.silikron.com
Preliminary Version: 1.0
page 3 of 6
SSF4031C1
Mechanical Data：
©Silikron Semiconductor CO.,LTD.
2015.01.22
www.silikron.com
Preliminary Version: 1.0
page 4 of 6
SSF4031C1
Ordering and Marking Information
Device Marking: SSF4031C1
Package (Available)
DPAK（TO-252）
Operating Temperature Range
C : -55 to 150 ℃
Devices per Unit
Reliability Test Program
Test Item
Conditions
High
Temperature
Reverse
Bias(HTRB)
High
Temperature
Gate
Bias(HTGB)
Duration
Sample Size
Tj=125℃ to 150℃ @
80% of Max
VDSS/VCES/VR
168 hours
500 hours
1000 hours
3 lots x 77 devices
Tj=150℃
@ 100% of Max VGSS
168 hours
500 hours
1000 hours
3 lots x 77 devices
©Silikron Semiconductor CO.,LTD.
2015.01.22
www.silikron.com
Preliminary Version: 1.0
page 5 of 6
SSF4031C1
ATTENTION:
■
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■
■
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■
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Any and all Silikron products described or contained herein do not have specifications that can handle applications
that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other
applications whose failure can be reasonably expected to result in serious physical and/or material damage.
Consult with your Silikron representative nearest you before using any Silikron products described or contained
herein in such applications.
Silikron assumes no responsibility for equipment failures that result from using products at values that exceed,
even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed
in products specifications of any and all Silikron products described or contained herein.
Specifications of any and all Silikron products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees of the
performance, characteristics, and functions of the described products as mounted in the customer’s products or
equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer
should always evaluate and test devices mounted in the customer’s products or equipment.
Silikron Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to
accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause
damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or
events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for
safe design, redundant design, and structural design.
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Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for
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implied regarding its use or any infringements of intellectual property rights or other rights of third parties.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
Silikron product that you intend to use.
This catalog provides information as of Dec, 2008. Specifications and information herein are subject to change
without notice.
Customer Service
Worldwide Sales and Service:
[email protected]
Technical Support:
[email protected]
Suzhou Silikron Semiconductor Corp.
11A, 428 Xinglong Street, Suzhou Industrial Park, P.R.China
TEL: (86-512) 62560688
FAX: (86-512) 65160705
E-mail: [email protected]
©Silikron Semiconductor CO.,LTD.
2015.01.22
www.silikron.com
Preliminary Version: 1.0
page 6 of 6