SSF2129H3
Main Product Characteristics:
VDSS
-20V
RDS(on)
21mΩ (typ.)
ID
-6.0A
D1
G1
Features and Benefits:
G2
S1
SOP-8
D2
Marking and pin
S2
Schematic diagram
Assignment
Advanced MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
150℃ operating temperature
Description:
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with
high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable
device for use in power switching application and a wide variety of other applications.
Absolute max Rating:
Symbol
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V①
-6
IDM
Pulsed Drain Current②
-24
Power Dissipation③
2.0
W
Linear Derating Factor
0.016
W/°C
VDS
Drain-Source Voltage
-20
V
VGS
Gate-to-Source Voltage
±8
V
-55 to +150
°C
PD @TC = 25°C
TJ
TSTG
Operating Junction and Storage Temperature Range
A
Thermal Resistance
Symbol
Characterizes
Typ.
Max.
Units
RθJC
Junction-to-case③
—
40
℃/W
RθJA
Junction-to-ambient (t ≤ 10s) ④
—
78
℃/W
©Silikron Semiconductor CO., LTD.
2013.01.22
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SSF2129H3
Electrical Characterizes @TA=25℃
Symbol
Parameter
V(BR)DSS
Drain-to-Source breakdown voltage
RDS(on)
Static Drain-to-Source on-resistance
VGS(th)
Gate threshold voltage
IDSS
Drain-to-Source leakage current
IGSS
Gate-to-Source forward leakage
Qg
unless otherwise specified
Min.
Typ.
Max.
Units
-20
—
—
V
—
21
30
mΩ
VGS=-4.5V,ID = -6A
—
33
40
mΩ
VGS=-2.5V,ID = -5.3A
-0.4
—
-1.5
V
—
—
1
—
—
50
—
—
100
—
—
-100
Total gate charge
—
24
—
Qgs
Gate-to-Source charge
—
4.2
—
Qgd
Gate-to-Drain("Miller") charge
—
5.6
—
td(on)
Turn-on delay time
—
8.1
—
tr
Rise time
—
15.2
—
td(off)
Turn-Off delay time
—
98
—
tf
Fall time
—
35
—
Ciss
Input capacitance
—
2819
—
Coss
Output capacitance
—
262
—
Crss
Reverse transfer capacitance
—
196
—
μA
nA
Conditions
VGS = 0V, ID = -250μA
VDS = VGS, ID = -250μA
VDS = -20V,VGS = 0V
TJ = 125℃
VGS =8V
VGS = -8V
ID = -6A,
nC
VDS=-10V,
VGS =-5V
VGS=-4.5V, VDS=-10V,
ns
ID = -1A,
RGEN=6Ω
VGS = 0V
pF
VDS = -10V
ƒ = 1MHz
Source-Drain Ratings and Characteristics
Symbol
IS
ISM
VSD
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
©Silikron Semiconductor CO., LTD.
Min.
Typ.
Max.
Units
—
—
-6
A
—
—
-24
A
—
—
-1.0
V
2013.01.22
www.silikron.com
Version: 1.0
Conditions
MOSFET symbol
D
showing the
integral reverse
G
p-n junction diode.
IS=-2.9A, VGS=0V
page 2 of 7
S
SSF2129H3
Test circuits and Waveforms
EAS test circuit:
Gate charge test circuit:
S
Switching time test circuit:
Switch Waveforms:
Notes:
①Calculated continuous current based on maximum allowable junction temperature.
②Repetitive rating; pulse width limited by max junction temperature.
③The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
④These curves are based on the junction-to-case thermal impedence which is measured with the
device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C.
©Silikron Semiconductor CO., LTD.
2013.01.22
www.silikron.com
Version: 1.0
page 3 of 7
SSF2129H3
Typical electrical and thermal characteristics
Figure 1. Maximum Drain Current Vs. Case
Figure 2.Typical Capacitance Vs. Drain-to-Source
Temperature
Voltage
Case Temperature
Figure3. Maximum Effective Transient Thermal Impedance, Junction-to-Case
©Silikron Semiconductor CO., LTD.
2013.01.22
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Version: 1.0
page 4 of 7
SSF2129H3
Mechanical Data：
SOP8 PACKAGE OUTLINE DIMENSION
©Silikron Semiconductor CO., LTD.
2013.01.22
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Version: 1.0
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SSF2129H3
Ordering and Marking Information
Device Marking: SSF2129H3
Package (Available)
SOP-8
Operating Temperature Range
C : -55 to 150 ºC
Devices per Unit
Package
Type
Units/
Tube
Tubes/Inner
Box
Units/Inner Inner
Box
Boxes/Carton
Box
Units/Carton
Box
SOP-8
2500
2
5000
40000
8
Reliability Test Program
Test Item
Conditions
Duration
Sample Size
High
Temperature
Reverse
Bias(HTRB)
High
Temperature
Gate
Bias(HTGB)
Tj=125℃ or 150℃ @
80% of Max
VDSS/VCES/VR
168 hours
500 hours
1000 hours
3 lots x 77 devices
Tj=125℃ or 150℃ @
100% of Max VGSS
168 hours
500 hours
1000 hours
3 lots x 77 devices
©Silikron Semiconductor CO., LTD.
2013.01.22
www.silikron.com
Version: 1.0
page 6 of 7
SSF2129H3
ATTENTION:
■
■
■
■
■
■
■
■
■
Any and all Silikron products described or contained herein do not have specifications that can handle applications
that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other
applications whose failure can be reasonably expected to result in serious physical and/or material damage.
Consult with your Silikron representative nearest you before using any Silikron products described or contained
herein in such applications.
Silikron assumes no responsibility for equipment failures that result from using products at values that exceed,
even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed
in products specifications of any and all Silikron products described or contained herein.
Specifications of any and all Silikron products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees of the
performance, characteristics, and functions of the described products as mounted in the customer’s products or
equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer
should always evaluate and test devices mounted in the customer’s products or equipment.
Silikron Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to
accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause
damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or
events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for
safe design, redundant design, and structural design.
In the event that any or all Silikron products(including technical data, services) described or contained herein are
controlled under any of applicable local export control laws and regulations, such products must not be exported
without obtaining the export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical,
including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior
written permission of Silikron Semiconductor CO.,LTD.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for
volume production. Silikron believes information herein is accurate and reliable, but no guarantees are made or
implied regarding its use or any infringements of intellectual property rights or other rights of third parties.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
Silikron product that you intend to use.
This catalog provides information as of Dec, 2008. Specifications and information herein are subject to change
without notice.
Customer Service
Worldwide Sales and Service:
[email protected]
Technical Support:
[email protected]
Suzhou Silikron Semiconductor Corp.
Building 11A Suchun Industrial Square, 428# Xinglong Street, Suzhou P.R. China
TEL: (86-512) 62560688
FAX: (86-512) 65160705
E-mail: [email protected]
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Version: 1.0
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