SSF3036C Main Product Characteristics: NMOS PMOS VDSS 30V -30V RDS(on) 32.4mohm 61.6mohm ID 4A -3.6A N-Channel Mosfet P-Channel Mosfet Schematic diagram DFN 3x2-8L Bottom View Features and Benefits: Advanced Process Technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150℃ operating temperature Description: It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. Absolute max Rating: Symbol Max. Parameter P-Channel 4① -3.6 ① Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V IDM Pulsed Drain Current ② 16 -14.4 VGS Gate to source voltage ±12 ±12 V PD @TC = 25°C Power Dissipation ③ 2.1 1.3 W TJ Operating Junction and Storage Temperature Range -55 to + 150 -55 to + 150 °C TSTG (Silicon Limited) N-Channel A Thermal Resistance Symbol Characterizes RθJA Junction-to-ambient (t ≤ 5s) ④ ©Silikron Semiconductor CO.,LTD. Typ. — 2012.02.02 www.silikron.com Max. N-channel P-Channel 60 95 Version : 1.0 Units ℃/W page 1 of 6 SSF3036C Electrical Characterizes @TA=25℃ unless otherwise specified Symbol Parameter V(BR)DSS Drain-to-Source breakdown voltage RDS(on) Static Drain-to-Source on-resistance VGS(th) Gate threshold voltage IDSS Drain-to-Source leakage current IGSS Gate-to-Source forward leakage Min. Typ. Max. N-channel 30 — — P-Channel -30 — — N-channel — 32.4 36 P-Channel — 61.6 65 N-channel 0.5 — 2 P-Channel -0.5 — -2 N-channel — — 1 P-Channel — — -1 N-channel — — 100 N-channel -100 — — P-Channel — — 100 P-Channel -100 — — Units Conditions VGS = 0V, ID = 250μA V VGS = 0V, ID = -250μA mΩ VGS= 4.5V,ID = 4.8A VGS= -4.5V,ID = -2.3A VDS = VGS, ID = 250μA V VDS = VGS, ID = -250μA μA VDS =30V,VGS = 0V VDS =-30V,VGS = 0V VGS =12V nA VGS = -12V VGS =12V VGS =-12V Source-Drain Ratings and Characteristics Symbol IS ISM VSD Parameter Min. Typ. Max. N-channel — — 4 P-Channel — — -3.6 N-channel — — 16 Continuous Source Current Conditions MOSFET symbol A Pulsed Source Current showing the integral reverse p-n junction diode. A P-Channel — — -14.4 N-channel — 0.82 1.2 Diode Forward Voltage IS=2.4A, VGS=0V V P-Channel ©Silikron Semiconductor CO.,LTD. Units — -0.85 2012.02.02 www.silikron.com -1.2 Version : 1.0 IS=-1.5A, VGS=0V page 2 of 6 SSF3036C Test circuits and Waveforms: Switching time waveform: Notes: ①The maximum current rating is limited by bond-wires. ②Repetitive rating; pulse width limited by max. junction temperature. ③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal resistance. ④The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C Thermal characteristics Figure1. Normalized Thermal Transient Impedance, Junction-to-Ambient ©Silikron Semiconductor CO.,LTD. 2012.02.02 www.silikron.com Version : 1.0 page 3 of 6 SSF3036C Mechanical Data： DFN 3X2_8L PACKAGE OUTLINE DIMENSION Symbol A A1 A3 D E b L e Dimension In Millimeters Nom Max 0.750 0.800 0.050 0.200REF 2.950 3.000 3.050 1.950 2.000 2.050 0.250 0.300 0.350 0.280 0.350 0.420 0.650BSC Min 0.700 0.000 ©Silikron Semiconductor CO.,LTD. Min 0.028 0.000 0.116 0.077 0.010 0.016 2012.02.02 www.silikron.com Dimension In Inches Nom 0.030 0.008REF 0.118 0.079 0.012 0.014 0.026BSC Version : 1.0 Max 0.031 0.002 0.120 0.081 0.014 0.017 page 4 of 6 SSF3036C Ordering and Marking Information Device Marking: 3036C Package (Available) DFN 3x2-8L Operating Temperature Range C : -55 to 150 ºC Devices per Unit Package Type Units/T Tubes/Inner ube Box DFN 3x2-8L 3000pcs 10pcs Reliability Test Program Test Item Conditions High Temperature Reverse Bias(HTRB) High Temperature Gate Bias(HTGB) Units/Inner Box 30000pcs Inner Boxes/Carton Box 4pcs Duration Sample Size Tj=125℃ to 150℃ @ 80% of Max VDSS/VCES/VR 168 hours 500 hours 1000 hours 3 lots x 77 devices Tj=150℃ @ 100% of Max VGSS 168 hours 500 hours 1000 hours 3 lots x 77 devices ©Silikron Semiconductor CO.,LTD. 2012.02.02 www.silikron.com Version : 1.0 Units/Carton Box 120000pcs page 5 of 6 SSF3036C ATTENTION: ■ ■ ■ ■ ■ ■ ■ ■ ■ Any and all Silikron products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your Silikron representative nearest you before using any Silikron products described or contained herein in such applications. Silikron assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all Silikron products described or contained herein. Specifications of any and all Silikron products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. Silikron Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all Silikron products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of Silikron Semiconductor CO.,LTD. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. Silikron believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the Silikron product that you intend to use. This catalog provides information as of Dec, 2008. Specifications and information herein are subject to change without notice. Customer Service Worldwide Sales and Service: [email protected] Technical Support: [email protected] Suzhou Silikron Semiconductor Corp. Building 11A Suchun Industrial Square, 428# Xinglong Street, Suzhou P.R. China TEL: (86-512) 62560688 FAX: (86-512) 65160705 E-mail: [email protected] ©Silikron Semiconductor CO.,LTD. 2012.02.02 www.silikron.com Version : 1.0 page 6 of 6