SSF2356G8 Main Product Characteristics: VDSS 20V RDS(on) 0.4Ω (typ.) ID 0.54A SOT-363 Marking and Pin Features and Benefits: Schematic Diagram Assignment Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150℃ operating temperature Description: It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. Absolute max Rating: Parameter Symbol Limit Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±8 V ID 0.54 A IDM 1.5 A PD 0.2 W TJ,TSTG -55 To 150 ℃ RθJA 625 ℃/W Drain Current-Continuous@ Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range Thermal Resistance Thermal Resistance,Junction-to-Ambient (Note 2) ©Silikron Semiconductor CO., LTD. 2013.11.05 www.silikron.com Version: 1.1 page 1 of 6 SSF2356G8 Electrical Characteristics @TA=25℃ unless otherwise specified Symbol Parameter V(BR)DSS Drain-to-Source breakdown voltage RDS(on) Static Drain-to-Source on-resistance Min. Typ. Max. Units 20 Conditions — — V VGS = 0V, ID = 250μA — 0.4 0.55 Ω VGS=4.5V,ID = 0.54A — 0.5 0.7 Ω VGS=2.5V,ID = 0.5A — 0.7 0.9 Ω VGS=1.8V,ID = 0.35A VGS(th) Gate threshold voltage 0.5 — 1.0 V VDS = VGS, ID = 250μA IDSS Drain-to-Source leakage current — — 1 μA VDS = 20V,VGS = 0V IGSS Gate-to-Source forward leakage — — ±1 — — ±10 Ciss Input capacitance — 87 — Coss Output capacitance — 17 — Crss Reverse transfer capacitance — 10 — μA VGS = ±4.5V VGS = ±8V VGS = 0V pF VDS = 16V ƒ = 1MHz Source-Drain Ratings and Characteristics Symbol IS ISM VSD Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage ©Silikron Semiconductor CO., LTD. Min. Typ. Max. Units — — 0.54 A — — 1.5 A — — 1.3 V 2013.11.05 www.silikron.com Version: 1.1 Conditions MOSFET symbol showing the integral reverse p-n junction diode. IS=0.12A, VGS=0V page 2 of 6 SSF2356G8 Test circuits and Waveforms EAS Test Circuit Gate charge test circuit Switching Time Test Circuit Switching Waveforms Notes: ①Calculated continuous current based on maximum allowable junction temperature. ②Repetitive rating; pulse width limited by max. junction temperature. ③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal resistance. ④The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C ©Silikron Semiconductor CO., LTD. 2013.11.05 www.silikron.com Version: 1.1 page 3 of 6 SSF2356G8 Mechanical Data： SOT-363(SC-88) PACKAGE OUTLINE DIMENSION ©Silikron Semiconductor CO., LTD. 2013.11.05 www.silikron.com Version: 1.1 page 4 of 6 SSF2356G8 Ordering and Marking Information Device Marking: MK1 Package (Available) SOT-363(SC-88) Operating Temperature Range C : -55 to 150 ºC Devices per Unit Package Type Units/ Tape Tapes/Inner Box Units/Inner Inner Box Boxes/Carton Box Units/ Carton Box SOT-363 3000 10 30000 360000 12 Reliability Test Program Test Item Conditions Duration Sample Size High Temperature Reverse Bias(HTRB) High Temperature Gate Bias(HTGB) Tj=125℃ to 150℃ @ 80% of Max VDSS/VCES/VR 168 hours 500 hours 1000 hours 3 lots x 77 devices Tj=150℃@ 100% of Max VGSS 168 hours 500 hours 1000 hours 3 lots x 77 devices ©Silikron Semiconductor CO., LTD. 2013.11.05 www.silikron.com Version: 1.1 page 5 of 6 SSF2356G8 ATTENTION: ■ ■ ■ ■ ■ ■ ■ ■ Any and all Silikron products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. 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Customer Service Worldwide Sales and Service: [email protected] Technical Support: [email protected] Suzhou Silikron Semiconductor Corp. 11A, 428 Xinglong Street, Suzhou Industrial Park, P.R.China TEL: (86-512) 62560688 FAX: (86-512) 65160705 E-mail: [email protected] ©Silikron Semiconductor CO., LTD. 2013.11.05 www.silikron.com Version: 1.1 page 6 of 6