Preliminary Datasheet RJH6088BDPK Silicon N Channel IGBT High Speed Power Switching R07DS0390EJ0100 Rev.1.00 May 11, 2011 Features • Ultra high speed switching tf = 60 ns typ. (at IC = 40 A, VCC = 300 V, VGE = 15 V, Rg = 5 Ω, Inductive Load) • Low on-state voltage • Fast recovery diode Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) C 4 1. Gate 2. Collector 3. Emitter 4. Collector (Flange) G 1 2 3 E Absolute Maximum Ratings (Tc = 25°C) Item Collector to emitter voltage Gate to emitter voltage Collector current Collector peak current Collector to emitter diode forward peak current Collector dissipation Junction to case thermal impedance (IGBT) Junction temperature Storage temperature Symbol VCES VGES IC ic(peak) Note1 IDF(peak) Note2 PC θj-c Ratings 600 ±30 60 120 120 268.8 0.465 Unit V V A A A W °C / W Tj Tstg 150 –55 to +150 °C °C Notes: 1. Pulse width limited by safe operating area. 2. Pulse width limited by maximum junction temperature. R07DS0390EJ0100 Rev.1.00 May 11, 2011 Page 1 of 7 RJH6088BDPK Preliminary Electrical Characteristics (Ta = 25°C) Item Zero gate voltage collector current Gate to emitter leak current Gate to emitter cutoff voltage Collector to emitter saturation voltage Input capacitance Output capacitance Reveres transfer capacitance Switching time C-E diode forward voltage C-E diode reverse recovery time Symbol ICES IGES VGE(off) VCE(sat) VCE(sat) Cies Coes Cres td(on) tr td(off) tf VECF trr Min — — 3.0 — — — — — — — — — — — Typ — — — 2.65 3.2 2600 270 27 50 40 105 60 1.4 100 Max 10 ±1 5.5 3.5 — — — — — — — — 1.9 — Unit μA μA V V V pF pF pF ns ns ns ns V ns Test Conditions VCE = 600 V, VGE = 0 VGE = ±30 V, VCE = 0 VCE = 10 V, IC = 1 mA IC = 30 A, VGE = 15 V Note3 IC = 60 A, VGE = 15 V Note3 VCE = 25 V VGE = 0 V f = 1MHz IC = 40 A VCC = 300 V, VGE = 15 V Rg = 5 Ω Inductive Load IF = 30 A Note3 IF = 30 A diF/dt = 100 A/μs Notes: 3. Pulse test R07DS0390EJ0100 Rev.1.00 May 11, 2011 Page 2 of 7 RJH6088BDPK Preliminary Main Characteristics Maximum Safe Operation Area Typical Output Characteristics 120 Collector Current IC (A) PW = 10 μs 100 10 1 0.1 Tc = 25°C 1 shot pulse 0.01 0.1 1 10 100 Collector Current IC (A) 9V 10 V 12 V 15 V 80 60 7.5 V 7V 40 VGE = 6.5 V 20 0 1 2 3 4 5 6 Collector to Emitter Voltage VCE (V) Typical Transfer Characteristics Collector to Emitter Saturation Voltage vs. Gate to Emitter Voltage (Typical) VCE = 10 V Pulse Test 100 80 60 Ta = 75°C 40 25°C –25°C 20 2 4 6 8 10 12 5 Ta = 25°C Pulse Test 4 IC = 60 A 3 30 A 2 20 A 4 8 6 5 VGE = 15 V Pulse Test IC = 120 A 4 60 A 3 30 A 20 A 10 A 2 1 −25 0 25 50 75 100 125 150 Junction Temparature Tj (°C) R07DS0390EJ0100 Rev.1.00 May 11, 2011 16 12 20 Gate to Emitter Voltage VGE (V) Gate to Emitter Cutoff Voltage VGE(off) (V) Collector to Emitter Saturation Voltage vs. Junction Temparature (Typical) 10 A 1 Gate to Emitter Voltage VGE (V) Collector to Emitter Saturation Voltage VCE(sat) (V) 8V 8.5 V Collector to Emitter Voltage VCE (V) 120 0 Ta = 25°C Pulse Test 100 0 1000 Collector to Emitter Saturation Voltage VCE(sat) (V) Collector Current IC (A) 1000 Gate to Emitter Cutoff Voltage vs. Junction Temparature (Typical) 10 8 6 IC = 10 mA 4 1 mA 2 VCE = 10 V Pulse Test 0 −25 0 25 50 75 100 125 150 Junction Temparature Tj (°C) Page 3 of 7 RJH6088BDPK Preliminary Typical Capacitance vs. Collector to Emitter Voltage Forward Current vs. Forward Voltage (Typical) 10000 Cies 80 Capacitance C (pF) Diode Forward Current IF (A) 100 60 40 VGE = 0 V Ta = 25°C Pulse Test 20 0 1000 Coes 100 Cres 10 VGE = 0 V f = 1 MHz Ta = 25°C 1 0 1 2 0 4 3 C-E Diode Forward Voltage VCEF (V) 50 100 150 200 250 Collector to Emitter Voltage VCE (V) 800 16 VGE 600 VCE VCC = 480 V 300 V 100 V 12 400 8 200 0 VCC = 480 V 300 V 100 V 0 20 40 60 4 IC = 60 A Ta = 25°C 80 0 100 Gate to Emitter Voltage VGE (V) Collector to Emitter Voltage VCE (V) Dynamic Input Characteristics (Typical) Gate Charge Qg (nc) R07DS0390EJ0100 Rev.1.00 May 11, 2011 Page 4 of 7 RJH6088BDPK Preliminary Switching Characteristics (Typical) (2) Switching Characteristics (Typical) (1) 10000 Swithing Energy Losses E (μJ) Switching Times t (ns) 1000 VCC = 300 V, VGE = 15 V Rg = 5 Ω, Tj = 25°C, Inductive load tf td(off) 100 td(on) tr 10 1000 100 Eoff 10 Eon 1 0.1 1 1 100 10 10 Collector Current IC (A) Switching Characteristics (Typical) (3) Switching Characteristics (Typical) (4) Swithing Energy Losses E (μJ) 10000 td(off) tf 100 tr td(on) VCC = 300 V, VGE = 15 V IC = 60 A, Tj = 25°C, Inductive load 10 1 10 Eoff 1000 Eon 100 VCC = 300 V, VGE = 15 V IC = 60 A, Tj = 25°C, Inductive load 10 100 1 Gate Resistance Rg (Ω) 100 10 Gate Resistance Rg (Ω) Switching Characteristics (Typical) (6) Switching Characteristics (Typical) (5) 1000 10000 VCC = 300 V, VGE = 15 V IC = 60 A, Rg = 5 Ω, Inductive load Swithing Energy Losses E (μJ) Switching Times t (ns) 100 Collector Current IC (A) 1000 Switching Times t (ns) VCC = 300 V, VGE = 15 V Rg = 5 Ω, Tj = 25°C Inductive load tf td(off) 100 tr td(on) 10 25 50 75 100 125 150 Junction Temperature Tj (°C) R07DS0390EJ0100 Rev.1.00 May 11, 2011 Eoff 1000 Eon 100 VCC = 300 V, VGE = 15 V IC = 60 A, Rg = 5 Ω, Inductive load 10 25 50 75 100 125 150 Junction Temperature Tj (°C) Page 5 of 7 RJH6088BDPK Preliminary Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width (IGBT) 10 Tc = 25°C 1 D=1 0.5 0.2 θj – c(t) = γs (t) • θj – c θj – c = 0.465 °C/W, Tc = 25°C 0.1 0.1 0.05 0.02 PDM D= PW T 0.01 1 shot pulse 0.01 10 μ 100 μ PW T 1m 10 m Pulse Width 100 m 10 1 PW (s) Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width (Diode) 10 Tc = 25°C 1 D=1 0.5 θj – c(t) = γs (t) • θj – c θj – c = 2.1 °CW, Tc = 25°C 0.2 0.1 0.1 0.05 0.0 2 PDM D= PW T 0.01 1 shot pulse 0.01 10 μ PW T 100 μ 1m 10 m Pulse Width 100 m 1 10 PW (s) Switching Time Test Circuit Waveform 90% Diode clamp VGE L 90% IC D.U.T 10% 10% 1% 10% td(on) VCC 90% tr td(off) tf ttail ton Rg toff VCE 10% R07DS0390EJ0100 Rev.1.00 May 11, 2011 Page 6 of 7 RJH6088BDPK Preliminary Package Dimension JEITA Package Code SC-65 Previous Code TO-3P / TO-3PV RENESAS Code PRSS0004ZE-A 15.6 ± 0.3 MASS[Typ.] 5.0g Unit: mm 4.8 ± 0.2 1.5 2.0 0.3 19.9 ± 0.2 14.9 ± 0.2 0.5 1.0 φ3.2 ± 0.2 5.0 ± 0.3 Package Name TO-3P 1.6 2.0 1.4 Max 18.0 ± 0.5 2.8 1.0 ± 0.2 3.6 0.6 ± 0.2 0.9 1.0 5.45 ± 0.5 5.45 ± 0.5 Ordering Information Orderable Part Number RJH6088BDPK-00-T0 R07DS0390EJ0100 Rev.1.00 May 11, 2011 Quantity 360 pcs Shipping Container Box (Tube) Page 7 of 7 Notice 1. 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