2SD1974 Silicon NPN Epitaxial REJ03G0797-0200 (Previous ADE-208-1161) Rev.2.00 Aug.10.2005 Application Low frequency power amplifier Outline RENESAS Package code: PLZZ0004CA-A (Package name: UPAK R ) 1 3 2, 4 2 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 1 ID 3 Note: Marking is “ES”. *UPAK is a trademark of Renesas Technology Corp. Absolute Maximum Ratings (Ta = 25°C) Item Symbol Collector to base voltage VCBO Collector to emitter voltage VCEO Emitter to base voltage VEBO Collector current IC Collector peak current ic (peak) E to C diode forward current ID Collector power dissipation PC*1 Junction temperature Tj Storage temperature Tstg Note: 1. Value on the alumina ceramic board (12.5 x 20 x 0.7 mm) Rev.2.00 Aug 10, 2005 page 1 of 5 Ratings 25 25 6 0.8 1.5 0.6 1.0 150 –55 to +150 Unit V V V A A A W °C °C 2SD1974 Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Collector to emitter sustaining voltage Symbol V(BR)CBO V(BR)CEO VCEO(sus) Min 25 25 25 Typ — — — Max — 35 35 Unit V V V Emitter to base breakdown voltage Collector cutoff current V(BR)EBO ICBO ICEO IEBO hFE VCE(sat) VD 6 — — — 250 — — — — — — — — — — 0.2 0.5 0.2 1200 0.4 1.5 V µA µA µA Emitter cutoff current DC current transfer ratio Collector to emitter saturation voltage E to C diode forward voltage Notes: 1. Pulse test Rev.2.00 Aug 10, 2005 page 2 of 5 V V Test conditions IC = 10 µA, IE = 0 IC = 1 mA, RBE = ∞ IC = 0.8 A, RBE = ∞, L = 20 mH IE = 10 µA, IC = 0 VCB = 20 V, IE = 0 VCE = 20 V, RBE = ∞ VEB = 5 V, IC = 0 VCE = 2 V, IC = 0.1 A*1 IC = 0.8 A, IB = 80 mA*1 ID = 0.6 A*1 2SD1974 Main Characteristics Area of Safe Operation 10 0.03 Ta = 25°C 1 Shot Pulse 0.3 1.0 3 10 30 100 Typical Output Characteristics 1.0 Collector Current IC (A) 8 6 4 2 0.8 1.8 1.6 1.4 1.2 0.6 1.0 0.8 0.4 0.6 0.4 0.2 0.2 mA IB = 0 Ta = 25°C 0.3 1.0 3 0 10 2 4 6 8 10 Pulse Width PW (ms) Collector to Emitter Voltage VCE (V) Typical Transfer Characteristics Saturation Voltage vs. Collector Current 0.8 0.6 0.4 VCE = 2 V Ta = 25°C Pulse 0.2 0.4 0.8 1.2 1.6 2.0 Base to Emitter Voltage VBE (V) Rev.2.00 Aug 10, 2005 page 3 of 5 Collector to Emitter Saturation Voltage VCE(sat) (V) Base to Emitter Saturation Voltage VBE(sat) (V) Diode Current ID (A) n Area of Safe Operation of Emitter to Collector Diode 1.0 Collector Current IC (A) s s tio 0.1 Collector to Emitter Voltage VCE (V) Ta = 25°C 1 Shot Pulse 0 ra Ambient Temperature Ta (°C) 10 0 0.1 O pe 0.3 0.01 0.01 150 C m 100 D IC(max) m 50 0 1.0 1 0.4 iC(peak) 10 0.8 3 = Collector Current IC (A) 1.2 PW Collector Power Dissipation PC (W) (on the alumina ceramic board) Maximum Collector Dissipation Curve 10 IC = 10 IB Ta = 25°C Pulse 3 1.0 VBE(sat) 0.3 0.1 t) (sa V CE 0.03 0.01 0.001 0.003 0.01 0.03 0.1 0.3 Collector Current IC (A) 1.0 2SD1974 DC Current Transfer Ratio vs. Collector Current Typical Characteristics of Emitter to Collector Diode 1.0 VCE = 2 V Pulse 3,000 Diode Current ID (A) DC Current Transfer Ratio hFE 10,000 25 1,000 Ta = 75°C –25 300 100 30 10 0.001 0.003 0.01 0.03 0.1 0.3 1.0 Collector Output Capacitance Cob (pF) Collector Output Capacitance vs. Collector to Base Voltage 1,000 Ta = 25°C f = 1 MHz IE = 0 100 30 10 3 1 0.3 1.0 3 10 30 Collector to Base Voltage VCB (V) Rev.2.00 Aug 10, 2005 page 4 of 5 0.6 0.4 0.2 0 Ta = 25°C Pulse 0.4 0.8 1.2 1.6 2.0 Emitter to Collector Forward Voltage VD (V) Collector Current IC (A) 300 0.8 2SD1974 Package Dimensions RENESAS Code Package Name MASS[Typ.] PLZZ0004CA-A UPAK / UPAKV 0.050g 1.5 1.5 3.0 1.5 ± 0.1 0.44 Max 2.5 ± 0.1 4.25 Max (1.5) 0.44 Max (0.2) 0.53 Max 0.48 Max 0.8 Min φ1 0.4 4.5 ± 0.1 1.8 Max Unit: mm (2.5) SC-62 (0.4) JEITA Package Code Ordering Information Part Name 2SD1974ESTL-E Quantity 1000 Shipping Container φ 178 mm Reel, 12 mm Emboss Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Aug 10, 2005 page 5 of 5 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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