Transient Voltage Suppressors for ESD Protection ESD05V02D-HC Description 0201/DFN0603 The ESD05V02D-HC is a silicon base in ultra small Surface-Mounted Device (SMD) special packages. It is designed to protect sensitive electronics from damage or latch up due to Electrostatic Discharge (ESD), lightning, and other voltage induced transient events.TVS diode designed to protect one power/control line or one signal line from overvoltage hazard of Electrostatic Discharge (ESD). Feature Functional Diagram Bi-directional ESD Protection of one line; Response time <1ns; Low clamping voltage; Low leakage ; Provides ESD protection to IEC61000-4-2(ESD): ±15kV (air discharge) ±8kV (contact discharge); Applications Cell Phone Handsets and Accessories; Microprocessor based equipment; Personal Digital Assistants (PDA’s); Notebooks (DVI/HDMI)、Desktops and Servers; Portable Instrumentation; Audio and video equipment; Mechanical Data Case:0201/DFN0603 Package molded plastic. Terminals: Gold plated, solderable per MIL-STD-750, Method 2026. Digital Camera; Polarity: Color band denotes cathode end. Mounting position: Any Reel Size : 7 inch Mechanical Characteristics Symbol Parameter Value Units 5.5 A Ipp Peak pulse Current (tp=8/20us) TJ Operating Junction Temperature Range -55 to +125 ºC Storage Temperature Range -55 to +150 ºC 260 ºC TSTG TL Soldering Temperature, t max = 10s VESD Air Discharge ±15（MIN） ContactDischarge ±8（MIN） IEC61000-4-2 (ESD) KV UN Semiconductor Co., Ltd. Revision December 18, 2013 www.unsemi.com.tw 1/3 @ UN Semiconductor Co., Ltd. 2013 Specifications are subject to change without notice. Please refer to www.unsemi.com.tw for current information. Transient Voltage Suppressors for ESD Protection ESD05V02D-HC Electrical Characteristics (@ 25℃ Unless Otherwise Specified ) Characteristics Reverse Working Voltage Reverse Breakdown Voltage Symbol Test Conditions Min. Typ. Max. Unit VRWM -- -- -- 5 V It=1mA 6 -- 9 V VRWM =3.3V；T=25°C -- -- 1 μA VC1 IPP =3A，TP =8/20μS； -- 7.5 -- V CJ2 VR =0V，f=1MHz； -- 15 20 pF VBR Reverse Leakage IR Current Positive Clamping Voltage Capacitance Between I/O And GND Characteristic Curves Fig1. 8/20μs Pulse Waveform Fig2.ESD Pulse Waveform (according to IEC 61000-4-2) Percent of Peak Pulse Current % 100% 90% 10% tr 0.7~1ns 30ns = Time (ns) 60ns Fig3. Power Derating Curve UN Semiconductor Co., Ltd. Revision December 18, 2013 www.unsemi.com.tw 2/3 @ UN Semiconductor Co., Ltd. 2013 Specifications are subject to change without notice. Please refer to www.unsemi.com.tw for current information. Transient Voltage Suppressors for ESD Protection ESD05V02D-HC Characteristic Curves Fig4. Clamping Voltage Vs. Peak Pulse Current Fig5. Capacitance Between Terminals Characteristics 0201/DFN0603 Package Outline & Dimensions LAND LAYOUT Mechanical Details UN Semiconductor Co., Ltd. Revision December 18, 2013 www.unsemi.com.tw 3/3 @ UN Semiconductor Co., Ltd. 2013 Specifications are subject to change without notice. Please refer to www.unsemi.com.tw for current information.