Transient Voltage Suppressors for ESD Protection ESD05V02D-NC Description 0201/DFN0603 The ESD05V02D-NC is ultra low capacitance TVS arrays designed to protect high speed data interfaces. This series has been specifically designed to protect sensitive components which are connected to high-speed data and transmission lines from over-voltage caused by ESD (electrostatic discharge), CDE (Cable Discharge Events), and EFT (electrical fast transients). Feature Functional Diagram 30 Watts Peak Pulse Power per Line (tp=8/20μs) Surface mount package Low clamping voltage Working voltages : 5V Low leakage IEC61000-4-2 (ESD) Level 4 ESD protection Ultra small SMD package:0201 Applications Cell Phone Handsets and Accessories Microprocessor based equipment Personal Digital Assistants (PDA’s) Notebooks, Desktops, and Servers Portable Instrumentation Peripherals Mechanical Data Case:0201/DFN0603 Package molded plastic. Terminals: Gold plated, solderable per MIL-STD-750, Method 2026. Pagers Polarity: Color band denotes cathode end. Mounting position: Any Reel Size : 7 inch Mechanical Characteristics Symbol Parameter Value Units PPP Peak Pulse Power (tp=8/20μs waveform) 30 W IPP Peak Pulse Current (tp=8/20μs waveform) 2.0 A TJ Operating Junction Temperature Range -55 to +125 ºC Storage Temperature Range -55 to +150 ºC 260 ºC TSTG TL Soldering Temperature, t max = 10s Air Discharge 16 Contact Discharge 8 IEC61000-4-2 (ESD) KV UN Semiconductor Co., Ltd. Revision December 18, 2013 www.unsemi.com.tw 1/3 @ UN Semiconductor Co., Ltd. 2013 Specifications are subject to change without notice. Please refer to www.unsemi.com.tw for current information. Transient Voltage Suppressors for ESD Protection ESD05V02D-NC Electrical Characteristics (@ 25℃ Unless Otherwise Specified ) Characteristics Reverse Working Voltage Symbol Test Conditions Min. Typ. Max. Unit VRWM -- -- -- 5 V 5.5 -- -- V -- -- 100 nA -- -- 12 V -- 6 -- pF Reverse Breakdown Voltage Reverse Leakage Current Positive Clamping VBR IR VC1 Voltage Capacitance Between I/O And GND CJ2 It=1mA VRWM =5V；T=25°C IPP=1A，tP=8/20μS； Positive pulse; VR =0V，f=1MHz； Characteristic Curves Fig1. 8/20μs Pulse Waveform Fig2.ESD Pulse Waveform (according to IEC 61000-4-2) Percent of Peak Pulse Current % 100% 90% 10% tr 0.7~1ns 30ns = Time (ns) 60ns Fig3. Power Derating Curve UN Semiconductor Co., Ltd. Revision December 18, 2013 www.unsemi.com.tw 2/3 @ UN Semiconductor Co., Ltd. 2013 Specifications are subject to change without notice. Please refer to www.unsemi.com.tw for current information. Transient Voltage Suppressors for ESD Protection ESD05V02D-NC Characteristic Curves Fig4. Clamping Voltage Vs. Peak Pulse Current Fig5. Capacitance Between Terminals Characteristics 0201/DFN0603 Package Outline & Dimensions Soldering Footprint UN Semiconductor Co., Ltd. Revision December 18, 2013 Symbol Inches Millimeters A 0.012 0.31 B 0.008 0.20 C 0.014 0.35 D 0.006 0.15 E 0.016 0.40 F 0.026 0.66 www.unsemi.com.tw 3/3 @ UN Semiconductor Co., Ltd. 2013 Specifications are subject to change without notice. Please refer to www.unsemi.com.tw for current information.