2SD1766 2A, 40V NPN Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-89 DESCRIPTION The 2SD1766 is suited for the output stage of 0.5W audio, voltage regulator, and relay driver. 4 1 2 3 A E CLASSIFICATION OF hFE Product Rank 2SD1766-P 2SD1766-Q 2SD1766-R 82~180 120~270 180~390 Range B D 1. Base F G H Marking DBP DBQ DBR J PACKAGE INFORMATION Collector MPQ Leader Size SOT-89 1K 7’ inch 2 2. Collector K REF. Package C A B C D E F 3. Emitter L Millimeter Min. Max. 4.40 4.60 3.94 4.25 1.40 1.60 2.30 2.60 1.50 1.70 0.89 1.20 REF. G H J K L Millimeter Min. Max. 0.40 0.58 1.50 TYP 3.00 TYP 0.32 0.52 0.35 0.44 1 Base 3 Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Total Power Dissipation Junction & Storage temperature Symbol Ratings Unit VCBO VCEO VEBO IC PD TJ, TSTG 40 32 5.0 2.0 0.5 150, -55~150 V V V A W °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Collector-base breakdown voltage V(BR)CBO 40 - - V IC= 50 µA, IE=0 Collector-emitter breakdown voltage V(BR)CEO 32 - - V IC= 1 mA, IB=0 Emitter-base breakdown voltage V(BR)EBO - - V IE= 50 µA, IC=0 - 1 µA VCB= 20 V, IE=0 - 1 µA VEB= 4 V, IC=0 Collector cut-off current ICBO Emitter cut-off current IEBO 5.0 - DC current gain hFE 82 - 390 VCE(sat) - - 0.8 V Transition frequency fT - 100 - MHz Output Capacitance COB - 30 - pF Collector-emitter saturation voltage http://www.SeCoSGmbH.com/ 04-Nov-2014 Rev. A Test Conditions VCE= 3 V, IC= 0.5 A IC= 2 A, IB= 0.2 A VCE=5V, IE=50mA, f=100MHz VCB=10V, IE=0, f=1MHz Any changes of specification will not be informed individually. Page 1 of 2 2SD1766 Elektronische Bauelemente 2A, 40V NPN Epitaxial Planar Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 04-Nov-2014 Rev. A Any changes of specification will not be informed individually. Page 2 of 2