2SD1760 3A , 60V NPN Epitaxial Planar Silicon Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free D-Pack (TO-252) FEATURES Low VCE(sat). VCE(sat) = 0.5V(Typ.) (IC/IB = 2A / 0.2A) Complements the 2SB1184 CLASSIFICATION OF hFE Product-Rank 2SD1760-P 2SD1760-Q 2SD1760-R Range 82~180 120~270 180~390 A B C D GE PACKAGE INFORMATION K Package MPQ Leader Size TO-252 2.5K 13’ inch M HF N O P J Collector REF. A B C D E F G H Base Emitter Millimeter Min. Max. 6.4 6.8 5.20 5.50 2.20 2.40 0.45 0.58 6.8 7.3 2.40 3.0 5.40 6.2 0.8 1.20 Millimeter Min. Max. 2.30 REF. 0.70 0.90 0.50 1.1 0.9 1.6 0 0.15 0.43 0.58 REF. J K M N O P ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 60 V Collector to Emitter Voltage VCEO 50 V Emitter to Base Voltage VEBO 5 V Collector Current -Continuous IC 3 A Collector Power Dissipation PC 1.5 W Junction Temperature TJ 150 ℃ Storage Temperature TSTG -55 ~ 150 ℃ ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Parameter Symbol Min. Typ. Max. Unit Collector-base breakdown voltage V(BR)CBO 60 - - V IC=50μA, IE=0 Collector-emitter breakdown voltage V(BR)CEO 50 - - V IC=1mA, IB=0 Emitter-base breakdown voltage V(BR)EBO 5 - - V IE=50μA, IC=0 Collector cut-off current ICBO - - 1 μA VCB=40V, IE=0 Emitter cut-off current IEBO - - 1 μA VEB=4V, IC=0 DC current gain hFE 82 - 390 VCE(sat) - - 1 V fT - 90 - MHz COB - 40 - pF Collector-emitter saturation voltage Transition frequency Collector Output Capacitance http://www.SeCoSGmbH.com/ 28-Mar-2011 Rev. A Test Conditions VCE=3V, IC=500mA IC=2A, IB=200mA VCE=5V, IC=500mA, f=30MHz VCB=10V, IE=0, f=1MHz Any changes of specification will not be informed individually. Page 1 of 3 2SD1760 Elektronische Bauelemente 3A , 60V NPN Epitaxial Planar Silicon Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 28-Mar-2011 Rev. A Any changes of specification will not be informed individually. Page 2 of 3 2SD1760 Elektronische Bauelemente 3A , 60V NPN Epitaxial Planar Silicon Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 28-Mar-2011 Rev. A Any changes of specification will not be informed individually. Page 3 of 3