SECOS 2SB1197_10

2SB1197
-0.8 A, -40 V
PNP Epitaxial Planar Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead free
FEATURES
SOT-23
Low VCE(sat).VCE(sat)≦-0.5V(IC / IB = -0.5A /-50mA)
IC =-0.8A
Complements of the 2SD1781
A
L
3
3
C B
Top View
1
CLASSIFICATION OF hFE
1
Product-Rank
2SB1197-P
2SB1197-Q
2SB1197-R
Range
82~180
120~270
180~390
Marking
AHP
AHQ
AHR
K
2
E
D
F
MPQ
LeaderSize
SOT-23
3K
7’ inch
H
G
Millimeter
Min.
Max.
2.80
3.04
2.10
2.55
1.20
1.40
0.89
1.15
1.78
2.04
0.30
0.50
REF.
PACKAGE INFORMATION
Package
2
A
B
C
D
E
F
REF.
G
H
J
K
L
J
Millimeter
Min.
Max.
0.09
0.18
0.45
0.60
0.08
0.177
0.6 REF.
0.89
1.02
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Ratings
Collector to Base Voltage
VCBO
-40
V
Collector to Emitter Voltage
VCEO
-32
V
Emitter to Base Voltage
VEBO
-5
V
IC
-800
mA
Pc
200
mW
TJ, TSTG
+150, -55 ~ +150
℃
Collector Currrent
Total Power Dissipation
Junction & Storage Temperature
Unit
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Collector-base breakdown voltage
BVCBO
-40
-
-
V
IC=-50μA, IE = 0
Collector-emitter breakdown voltage
BVCEO
-32
-
-
V
IC=-1mA, IB = 0
Emitter-base breakdown voltage
BVEBO
-5
-
-
V
IE=-50μA, IC = 0
ICBO
-
-
-0.5
μA
VCB=-20V, IE = 0
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
IEBO
-
-
-0.5
μA
VEB= -4V, IC = 0
VCE(sat)
-
-
-0.5
V
IC=-500mA, IB=-50mA
DC current gain
hFE
82
-
390
Transition frequency
fT
50
200
-
MHz
COB
-
12
30
pF
Collector output capacitance
http://www.SeCoSGmbH.com/
31-Dec-2010 Rev. C
Test Conditions
VCE=-3V, IC=-100mA
VCE=-5V, IC=-50mA, f=100MHz
VCB=-10V, IE=0, f=1MHz
Any changes of specification will not be informed individually.
Page 1 of 2
2SB1197
Elektronische Bauelemente
-0.8 A, -40 V
PNP Epitaxial Planar Transistor
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
31-Dec-2010 Rev. C
Any changes of specification will not be informed individually.
Page 2 of 2