BCV27 40 V, 500mA NPN Darlington Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES A For general AF application high collector current High current gain L 3 3 C B Top View 1 1 K 2 E 2 D Collector 3 F 1 REF. Base A B C D E F 2 Emitter H G Millimeter Min. Max. 2.70 3.04 2.10 2.80 1.20 1.60 0.89 1.40 1.78 2.04 0.30 0.50 REF. G H J K L J Millimeter Min. Max. 0.18 0.40 0.60 0.08 0.20 0.6 REF. 0.85 1.15 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL RATING UNIT Collector to Base Voltage VCBO 40 V Collector to Emitter Voltage VCEO 30 V Emitter to Base Voltage VEBO 10 V Collector Current - Continuous IC 500 mA Collector Current - Peak ICM 800 mA Collector Power Dissipation PC 350 mW RθJA 357 °C/W TJ, TSTG 150, -65~150 °C Thermal Resistance, Junction to Ambient Air Junction, Storage Temperature ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) SYMBOL MIN TYP MAX UNIT Collector to Base Breakdown Voltage PARAMETER V(BR)CBO 40 - - V TEST CONDITION Collector to Emitter Breakdown Voltage V(BR)CEO 30 - - V IC=10mA, IB = 0A Emitter to Base Breakdown Voltage V(BR)EBO 10 - - V IE=10µA, IC = 0A IC=100µA, IE = 0A Collector Cut-Off Current ICBO - - 0.1 µA VCB=30 V, IE = 0 A Emitter Cut-Off Current IEBO - - 0.1 µA VEB=4 V, IC = 0 A hFE1* 4000 - - VCE=1V, IC=100µA hFE2* 10000 - - VCE=5V, IC=10mA hFE3* 20000 - - VCE=5V, IC=100mA hFE4* 4000 - - Collector to Emitter Saturation Voltage VCE(sat) * - - 1 V IC=100mA, IB=0.1mA Base to Emitter Saturation Voltage VBE(sat) * - - 1.5 V IC=100mA, IB=0.1mA fT - 170 - MHz - 3.5 - pF DC Current Gain Transition Frequency Collector Output Capacitance Cob *Pulse test: Pulse width ≦300µS; Ducy Cycle ≦2.0% http://www.SeCoSGmbH.com/ 22-Jan-2010 Rev. A VCE=5V, IC=500mA VCE = 5V, IC =50mA, f=100MHz VCB = 10V, f=1MHz Any changes of specification will not be informed individually. Page 1 of 3 BCV27 Elektronische Bauelemente 40 V, 500mA NPN Darlington Plastic Encapsulated Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 22-Jan-2010 Rev. A Any changes of specification will not be informed individually. Page 2 of 3 BCV27 Elektronische Bauelemente 40 V, 500mA NPN Darlington Plastic Encapsulated Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 22-Jan-2010 Rev. A Any changes of specification will not be informed individually. Page 3 of 3