SECOS 2SC2717

2SC2717
0.05A , 30V
NPN Plastic-Encapsulated Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
TO-92
FEATURES


High Gain:Gpe=33 dB(Typ.)(f =45MHz)
Good Linearity of hFE
G
H
Base
Emitter
Collector
J
A
D
A
B
C
D
E
F
G
H
J
K
K
E
C
Millimeter
Min.
Max.
4.40
4.70
4.30
4.70
12.70
3.30
3.81
0.36
0.56
0.36
0.51
1.27 TYP.
1.10
2.42
2.66
0.36
0.76
REF.
B
F
Collector


Base

Emitter
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
Symbol
Rating
Unit
VCBO
VCEO
VEBO
IC
PC
TJ, TSTG
30
25
4
50
300
125, -55~125
V
V
V
mA
mW
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut – Off Current
Emitter Cut – Off Current
DC Current Gain
Collector to Emitter Saturation Voltage
Base to Emitter Saturation voltage
Transition Frequency
Collector Output Capacitance
Collector to Base Time Constant
Power Gain
http://www.SeCoSGmbH.com/
14-Mar-2011 Rev. A
Symbol
Min.
Typ.
Max.
Unit
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
fT
Cob
CC.rbb’
30
25
4
40
300
0.8
-
-
0.1
0.1
240
0.2
1.5
2
25
V
V
V
μA
μA
V
V
MHz
pF
ps
Gpe
28
-
36
dB
Test Condition
IC=100μA, IE=0
IC=10mA, IB=0
IE=100μA, IC=0
VCB=30V, IE=0
VEB=3V, IC=0
VCE=12.5V, IC=12.5mA
IC=15mA, IB=1.5mA
IC=15mA, IB=1.5mA
VCE=12.5V, IC=12.5mA
VCB=10V, IE=0, f=30MHz
VCB=10V, IE=-1mA, f=30MHz
VCC=12.5V, IE=-12.5mA,
f=45MHz
Any changes of specification will not be informed individually.
Page 1 of 3
2SC2717
Elektronische Bauelemente
0.05A , 30V
NPN Plastic-Encapsulated Transistor
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
14-Mar-2011 Rev. A
Any changes of specification will not be informed individually.
Page 2 of 3
2SC2717
Elektronische Bauelemente
0.05A , 30V
NPN Plastic-Encapsulated Transistor
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
14-Mar-2011 Rev. A
Any changes of specification will not be informed individually.
Page 3 of 3