SECOS MPSA42

MPSA42
NPN Plastic Encapsulated Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
TO-92
FEATURES
High Voltage NPN Transistor
G
H
Emitter

J
A
REF.
D

A
B
C
D
E
F
G
H
J
K
B
Base
K

E
Collector
C
F
Millimeter
Min.
Max.
4.40
4.70
4.30
4.70
12.70
3.30
3.81
0.36
0.56
0.36
0.51
1.27 TYP.
1.10
2.42
2.66
0.36
0.76
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
PARAMETER
SYMBOL
RATING
UNIT
Collector to Base Voltage
VCBO
300
V
Collector to Emitter Voltage
VCEO
300
V
Emitter to Base Voltage
VEBO
5
V
Collector Current - Continuous
IC
0.5
A
Collector Power Dissipation
PC
625
mW
Junction, Storage Temperature
TJ, TSTG
150, -55~150
°C
Thermal Resistance, junction to Ambinet
RθJA
200
°C/ mW
Thermal Resistance, junction to Case
RθJC
83.3
°C/ mW
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
SYMBOL
MIN
TYP
MAX
UNIT
Collector to Base Breakdown Voltage
PARAMETER
V(BR)CBO
300
-
-
V
IC=100μA, IE = 0A
Collector to Emitter Breakdown Voltage
V(BR)CEO
300
-
-
V
IC=1mA, IB = 0A
Emitter to Base Breakdown Voltage
V(BR)EBO
5
-
-
V
IE=100μA, IC = 0A
Collector Cut-Off Current
ICBO
-
-
0.25
μA
VCB=200 V, IE = 0 A
Emitter Cut-Off Current
IEBO
-
-
0.1
μA
VEB=5 V, IC =0 mA
hFE(1)
60
-
-
VCE=10V, IC=1mA
hFE(2)
80
-
250
VCE=10V, IC=10mA
DC Current Gain
TEST CONDITION
hFE(3)
75
-
-
Collector to Emitter Saturation Voltage
VCE(sat)
-
-
0.2
V
IC=20mA, IB=2mA
Base to Emitter Voltage
VBE(sat)
-
-
0.9
V
IC=20mA, IB=2mA
fT
50
-
-
MHz
Transition Frequency
VCE=10V, IC=30mA
VCE = 20V, IC = 10mA, f=30MHz
CLASSIFICATION OF hFE(2)
Rank
Range
http://www.SeCoSGmbH.com/
02-Apr-2010 Rev. A
A
B1
B2
C
80-100
100-150
150-200
200-250
Any changes of specification will not be informed individually.
Page 1 of 3
MPSA42
Elektronische Bauelemente
NPN Plastic Encapsulated Transistor
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
02-Apr-2010 Rev. A
Any changes of specification will not be informed individually.
Page 2 of 3
MPSA42
Elektronische Bauelemente
NPN Plastic Encapsulated Transistor
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
02-Apr-2010 Rev. A
Any changes of specification will not be informed individually.
Page 3 of 3