2N6520 -0.5 A, -350 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES High voltage transistors TO-92 G H Collector J A REF. D A B C D E F G H J K B K Base E C F Emitter Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 2.42 2.66 0.36 0.76 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL RATING UNIT Collector to Base Voltage VCBO -350 V Collector to Emitter Voltage VCEO -350 V Emitter to Base Voltage VEBO -5 V Collector Current - Continuous IC -0.5 A Collector Power Dissipation PC 0.625 W RθJA 200 °C / W TJ, TSTG 150, -55~150 °C Thermal resistance, junction to ambient Junction, Storage Temperature ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) SYMBOL MIN TYP MAX UNIT Collector to Base Breakdown Voltage PARAMETER V(BR)CBO -350 - - V IC= -100μA, IE = 0A Collector to Emitter Breakdown Voltage V(BR)CEO * -350 - - V IC= -1mA, IB = 0A V(BR)EBO -5 - - V IE= -10μA, IC = 0A Collector Cut-Off Current ICBO - - -50 nA VCB= -250V, IE = 0 A Emitter Cut-Off Current IEBO nA VEB= -4V, IC =0 mA Emitter to Base Breakdown Voltage DC Current Gain Collector to Emitter Saturation Voltage hFE * VCE(sat) * TEST CONDITION - - -50 20 - - VCE= -10V, IC= -1mA 30 - - VCE= -10V, IC= -10mA 30 - 200 VCE= -10V, IC= -30mA 20 - 200 VCE= -10V, IC= -50mA 15 - - VCE= -10V, IC= -100mA - - -0.3 IC= -10mA, IB= -1mA - - -0.35 IC= -20mA, IB= -2mA - - -0.5 - - -1.0 - - -0.75 - -0.85 V IC= -30mA, IB= -3mA IC= -50mA, IB= -5mA IC= -10mA, IB= -1mA Base to Emitter Saturation Voltage VBE(sat) * - - -0.9 Base to Emitter voltage VBE(on) * - - -2 V VCE= -10V, IC= -100mA Collector-Base Capacitance Ccb - - 6 pF VCB = -20V, IE = 0A, f=1MHz Emitter-Base Capacitance Ceb - - 80 pF VEB = -0.5V, IC = 0A, f=1MHz 40 - 200 MHz Transition Frequency fT * *Pulse test：Pulse Width ≦ 300 μs, Duty Cycle ≦ 2.0%. http://www.SeCoSGmbH.com/ 02-Sep-2010 Rev. A V IC= -20mA, IB= -2mA IC= -30mA, IB= -3mA VCE = -20V, IC = -10mA, f=20MHz Any changes of specification will not be informed individually. Page 1 of 2 2N6520 Elektronische Bauelemente -0.5 A, -350 V PNP Plastic Encapsulated Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 02-Sep-2010 Rev. A Any changes of specification will not be informed individually. Page 2 of 2